EPITAXX 40 Search Results

EPITAXX

Abstract: InGaAs Epitaxx InGaAs photodiode TWO COLOR DETECTOR two color photodiode EPITAXX ingaas detector ETX 40
Contextual Info: I 33b040b QQOGISE fi « E P X SGE D EPITAXX INC EPITAXX -7 ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device

EPITAXX ETX 75

Abstract: InGaAs Epitaxx PIN ETX 75 FJ M EPITAXX J254 100rst 100RF ingaas photodetector epitaxx ETX 75FJ/FC 75FJ/FC-XX FC/JDSU ETX
Contextual Info: EPITAXX INC SOE D 33bCm0b DQQGLbS □ W Ê E P X ETX 75FJ/FC-xx Series ETX 1OORxx Series EPITAXX H ig h Speed InGaAs Photodetector M odules Fibered and Connector Receptacle Packages Features • Low capacitance for high bandwidth ■ Low dark current for high sensitivity

InGaAs Epitaxx

Abstract: EPITAXX InGaas PIN photodiode chip InGaas PIN photodiode chip back illuminated 100C
Contextual Info: E P I T A X X INC S4E D • 33b040b DODDDbT T ■ EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at

Contextual Info: EPITAXX SQE » INC • 3BbQ4Qti GQGG1S0 H H E P X " 7 ^ 4 fcKII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at

Detector with Pigtail 1550 nm

Abstract: EPITAXX EPM700J Fabry-Perot-Laser 1550 pin Photodiode 1550 nm connector RADIALL EPX Radiall detector coaxial inGaAs photodiode 1550 InGaas PIN photodiode chip InGaas PIN photodiode, 1550
Contextual Info: EPITAXX INC SOE D m 33b04Qb OOÜOlMb 2 • EPX 53 EPITAXX_ EPM70° Low Distortion InGaAs PIN Photodiode for CATV / Analog Video Features Low interm odulation distortion Low optical back reflection Low capacitance High responsivity at 1330 nm and 1550 nm

epitaxx

Contextual Info: epitaxx inc IDE D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r

ETX 40

Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
Contextual Info: IDE D | 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'

Contextual Info: EPiTAXX EPM 6 0 5 EPM 6 0 5 LL InGaAs PIN Photodiode Low Reflection EPM 605 , Low Leakage, Low Reflection (EPM 605 LL) P re lim in a ry S p e c ifica tio n s • Low back reflection • High responsivity at 13 10 nm and 1550 nm • Single Mode 900 nm fiber with or without a connector

Contextual Info: EPITAXX INC 24E i> m 33^040^ Qoaaiaa □ • epx EPÏTAXtf I N T R O D U C E S 1300 N M LASERS, ELEDs, A N D P H O T O D I O D E S IN STTM A C T I V E D E V I C E M O U N T S T -H I-O* # 90-34 Release Date: Contact: IMMEDIATE Karen Kinsman Sales Manager Press

EPITAXX ETX 75

Abstract: EPITAXX ETX 100 RFC 2 TO18 package LED 1300 nm ERM500 radiall connector rfc-m 10 1300RFC InGaAs 1550 photodiode transimpedance amplifier EPITAXX etx 40
Contextual Info: ETX 1300RFC, ETX 1300RST ETX 1300FJ, ETX 1300FC 1300 nm H igh Power ELED Modules Features •High coupled power 75 ¿iW typical into multimode ■High speed response (3.5 ns typical) ■Narrow emission spectrum (60 nm typ.) ■Singlemode and multimode versions

ETX100RST

Abstract: ETX100RFC-2 ETX100RFC-4 AT-1300 ingaas photodetector EPITAXX ETX 100 RFC 2 ETX100RFC2
Contextual Info: Epi E T X 10ORFC/RST Series H ig h Speed In G aA s P h o to d e te e to r M o d u le s Connector Receptacle Packages Features • High responsivity at 1300 nm ■ Bandwidth greater than 1 GHz ■ High Sensitivity ■ Rugged coaxial packages ■ Simple mounting

EPITAXX erm

Abstract: EPITAXX InGaAs photodiode 100ps UW 567 erm567
Contextual Info: Product Bulletin ERM 567 2.5 Gb/s Short Haul, High Gain SONET/SDH PIN-TIA Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V, VPD = +5V All specifications without connector. Parameter

EPITAXX ETX100RST

Abstract: ETX100RST ETX100RFC2 EPITAXX ETX 75 ETX100RFC-2 ingaas photodetector
Contextual Info: EPI E T X 1 0 O R F C /R S T S e rie s High Speed InGaAs Photodetector Modules Connector Receptacle Packages Features - High responsivity at 1300 nm • Bandw idth greater than 1 GHz ■ High Sensitivity ■ Rugged coaxial packages ■ Simple m ounting - ST receptacle for PC boards

Contextual Info: EPM 613 Pigtailed 1300 nm Passband Detector Module Preliminary Specifications Features • • • • • High responsivity at 1300 nm -39 dB isolation at 1550 nm @ 25o C Bandwidth greater than 1.5 GHz Rugged coaxial package Single Mode 900 µm fiber with or without a

InGaAs Epitaxx APD

Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions

EPITAXX

Abstract: EPITAXX EPM InGaAs Epitaxx EPM epm 6xx series
Contextual Info: Product Bulletin EPM 7xx Series Forward and Return Path Analog CATV Detector Modules EPM 705 Specifications Conditions (unless noted): Temperature = 25°C, VR = 5V All specifications without connector. Parameter Measurement Conditions Min Responsivity λ = 1310 nm

EPITAXX

Abstract: 745 diode dual ingaas photodiode InGaAs Epitaxx EPM schema EPM-745
Contextual Info: Forward Path CATV EPM 745 Low Distortion, Low Capacitance InGaAs PIN Photodiode for 860 MHz AM CATV Features • • • • • Low Intermodulation distortion High responsivity Low capacitance Low back reflection Linear with high input optical power to +5 dBm

EPITAXX

Abstract: InGaAs Epitaxx EPM 705 w dual ingaas photodiode
Contextual Info: Return Path CATV EPM 705 Low Distortion, Low Capacitance InGaAs PIN Photodiode for Return Path and 550 MHz AM CATV Features • Low intermodulation distortion • High responsivity • Low back reflection Applications • AM fiber optic CATV receivers to 550 MHz

EPM601RSC

Abstract: IPM601R5C-DM
Contextual Info: EPM 601 use High Extinction Ratio InGaAs Photodetector Module SC Connector Receptacle Package Preliminary Specifications Features • High responsivity at 1300 nm • Bandwidth greater than 1 GHz ■ High extinction ratio ■ Rugged coaxial package Applications

EPITAXX ETX 100 RFC 2

Abstract: Fiber Optic Transmitters "Fiber Optic Transmitters" ETX 1300 EPITAXX ETX 75
Contextual Info: ET X 15SORFC, ET X 1550RST ETX I5 5 0 F J, E T X 1550FC EPlI 1 5 5 0 nm H ig h P o w e r ELED M o d u les Features A p p lica tio n s • High coupled power 15 |xW typical into singlemode ■ High speed response (3.5 ns typical) ■ Narrow emission spectrum (75 nm typ.

12-pin transimpedance amplifier

Abstract: PIN photodiode ps SCHEMA D000342 EPITAXX ERM535 EPITAXX ingaas detector
Contextual Info: ìf ìt a x x ERM535A fJ M .M M B M a iB J .ilM • ■ ■ ■ ■ a H igh Sensitivity, Com pact Sonet O C-12 Pin Transim pedance A m plifier O ptical Receiver M odules Preliminary Inform ation Fe atu re s ■ InGaAs PIN Photodiode and GaAs Transimpedance Amplifier

DIODE T5

Abstract: ETX10LIN24-T5 ETX20LIN22-T5 ETX 40 epitaxx 20LIN22-T5
Contextual Info: E T X 10L IN 24-T 5 E T X 20L IN 22-T 5 Large A rea InGaAs PIN P h otod iod es L in e a r a b o v e 2 0 dB m I n p u t P o w e r Features • Chip centered to ±125 um relative to header Electro-Optical ■ InGaAs PIN Photodiode w ith high responsivity at 1300 and 1550 nm

Contextual Info: EP lTÀ X X ETX S000T8 Large Area InGaAs P-l-N Photodiode 5 mm Active Diameter Features •High responsivity at 1300, i 550 and 850 nm ■High shunt resistance for low noise ■Low dark current for high accuracy ■Packaged in a TO-8 can A pp lications ■Fiber optic test instruments

InGaAs Epitaxx APD

Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown