EPC2818 Search Results
EPC2818 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| EPC2818 | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 150V 12A BUMPED DIE | Original | 6 |
EPC2818 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: eGaN FET DATASHEET EPC2818 EPC2818 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 150 V RDS ON , 25 mW ID , 12 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure |
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EPC2818 |