EPC2018 Search Results
EPC2018 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| EPC2018 | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 150V 12A BUMPED DIE | Original | 6 |
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EPC2018 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: EPC2018 eGaN FET DATASHEET EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure |
Original |
EPC2018 | |
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Contextual Info: eGaN FET DATASHEET EPC2018 EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure |
Original |
EPC2018 |