EPC2007 Search Results

EPC2007 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EPC2007		Efficient Power Conversion	FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 6A BUMPED DIE	Original	PDF		6
EPC2007C		EPC	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 6A BUMPED DIE	Original	PDF	1.17MB

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Efficient Power Conversion EPC2007C GANFET N-CH 100V 6A DIE OUTLINE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	EPC2007C	Digi-Reel	5,158		1	1 $3.08 10 $2.00 100 $1.38 1000 $1.16 10000 $1.16	Buy Now
	EPC2007C	Cut Tape	5,158		1	1 $3.08 10 $2.00 100 $1.38 1000 $1.16 10000 $1.16	Buy Now
	EPC2007C	Reel	3,700		2,500	1 - 10 - 100 - 1000 - 10000 $0.95	Buy Now
Efficient Power Conversion EPC2007 GANFET N-CH 100V 6A DIE OUTLINE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EPC2007	Reel			1,000	1 - 10 - 100 - 1000 $0.85 10000 $0.82	Buy Now
EPC EPC2007C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	EPC2007C		3,480			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EPC2007 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: eGaN FET DATASHEET EPC2007 EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 30 mW ID , 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure	Original	EPC2007	PDF
Contextual Info: 100 V Half-Bridge with Gate Drive, using EPC2007 Rev 2.0	Original	EPC2007	PDF
Contextual Info: EPC2007 eGaN FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 30 mΩ ID , 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure	Original	EPC2007 EPC2007	PDF
Contextual Info: NOTE. The EPC9006 development board does not have any current or thermal protection on board. Figure 4: Typical Waveforms for VIN = 48 V to 5 V/5 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage	Original	EPC9006 1000kHz) EPC2007	PDF