EPC2 Search Results

EPC2001

Abstract: EPC Gan transistor FX-93 FET MARKING QG
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: Series EPC Up to 110A 460 Vac Phase Angle Controller Part Number Description EPC24N10A 10A, 265 Vac EPC24N40A 40A, 265 Vac EPC24N40R 40A, 265 Vac EPC46N70A 70A, 460 Vac EPC46N110A 110A, 460 Vac Part Number Explanation EPC 24 N 10 A NOTES 1 Line Voltage nominal): 24 = 240 Vac; 46 = 460 Vac

Contextual Info: eGaN FET DATASHEET EPC2014 EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mW ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high

Contextual Info: EPC2010 eGaN FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2018 eGaN FET DATASHEET EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mΩ ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2015 eGaN FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2012 EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC Gan transistor

Abstract: EPC2001 DIODE marking ED X9
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC19

Abstract: inverter 10w UI15 EPC23 INT014S INT018S epc-19
Contextual Info: CCFL Driving Inverter Transformer Type Dimensions: UNIT : mm INT013S EPC19.8 Recommand Pad 5-2.5 3.3 32.0 7.0 7 11 28.2 20.5 0.6x0.4 1.6 8 1 2.5 INT014S (EPC23) 11.0 3.5 43.0 2.1 11 10.0 0.6x0.4 13.6 39.0 24.0 7 8 INPUT VOLTAGE :12(Vdc) SUITABLE FREQUENCY :

Contextual Info: eGaN FET DATASHEET EPC2007 EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 30 mW ID , 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2018 EPC2018 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mW ID , 12 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2818 EPC2818 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 150 V RDS ON , 25 mW ID , 12 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: 100 V Half-Bridge with Gate Drive, using EPC2007 Rev 2.0

Contextual Info: EPC2016 eGaN FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 16 mΩ ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2014 eGaN FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mΩ ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high

transformer ferrite core

Abstract: FERRITE core TRANSFORMER TDK, TRANSFORMER, EPC19 epc17 TRANSFORMER EPC19 EPC17 EPC TRANSFORMER EPC25 TDK CORE EPC27
Contextual Info: reactor cores,EPC cores,tdk ferrite core,EPC10 core,EPC13 core,EPC17 core,EPC19 core, China Professional Ferrite Core Supplier p EPC CORES Introduce of EPC core EPC Cores cover many different kinds of types, such as EPC10 core, EPC13 core, EPC17 core, EPC19 core, EPC25

EPC2015

Abstract: EPC Gan transistor FX-93 micrometer
Contextual Info: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2815 EPC2815 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 40 V RDS ON , 4 mW ID , 33 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2012 eGaN FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2001 eGaN FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mΩ ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

inverter 60 watt

Abstract: EPC17 inverter 100 watt EFD15 EPC19 CIT001 epc17 TRANSFORMER CIT003 CIT004 CIT005
Contextual Info: CCFL Driving Inverter Transformer Type CIT001 EPC25 Dimensions: UNIT : mm 1.1 3.8 14.5 Specifications Recommand Pad 31.0 6 1 6 10 7 MAX.LAMP WATTANG :12W MAX.OPEN VOLTAGE :1500(Vrms) 27.0 28.0 0.8 7 10 1 19.0 CIT002 (EFD25) 15.0 3.8 27.5 0.8 1 MAX.LAMP WATTANG :17W

lcd tv inverter schematic

Abstract: lcd Inverter Delta schematic 32" lcd inverter lcd tv schematic ccfl lcd inverter schematic lcd inverter schematic tv lcd inverter schematic EPC25 inverter Delta ccfl inverter schematic
Contextual Info: Inverter Transformer For LCD TV EPC25/40 Type Features: Easy surface mounting and compatible with hot-air reflow soldering. Low profile 13.0mm Max. . High voltage resistant and reliable due to multi-divisible construction. Green product version. Driving 8~10 pcs CCFL.