EPA120D Search Results

EPA120D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
EPA120D		Excelics Semiconductor	High Efficiency Heterojuction FETs	Original	PDF	42.47KB	2
EPA120D-CP083		Excelics Semiconductor	High Efficiency Heterojuction FETs	Original	PDF	76.6KB	1

EPA120D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EPA120D-CP083 Contextual Info: EPA120D-CP083 High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT	Original	EPA120D-CP083 160MIL 5x1200 175oC -65/175oC EPA120D-CP083	PDF
VP 1176 Abstract: EPA120D Contextual Info: EPA120D High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES • • • • • • +29.5dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE	Original	EPA120D VP 1176 EPA120D	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

EPA120D-CP083

Contextual Info: EPA120D-CP083 High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT

Original

EPA120D-CP083 160MIL 5x1200 175oC -65/175oC EPA120D-CP083

PDF

VP 1176

Abstract: EPA120D
Contextual Info: EPA120D High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES • • • • • • +29.5dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE

Original

EPA120D VP 1176 EPA120D

PDF

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

Original

PDF