EOB-3 E 24 Search Results

ic s79 pin configuration diagram

Abstract: SC53 S6B0086 S6B2104 SC32 SC33 SC34 SC35 SC36 7 segment display 30 pin configuration clock
Contextual Info: 80CH SEGMENT DRIVER FOR DOT MATRIX LCD S6B2104 INTRODUCTION The S6B2104 is a LCD driver IC, which is fabricated by low power CMOS high voltage process technology. This device consists of 80-bit bi-directional shift register, 80-bit data latch and 80 bit driver.

Contextual Info: INTEGRATED DEVICE bbE D H MÖ25771 0Q12M7D 7TT • IDT HIGH-SPEED 128K 8K x 16 BIT PRELIMINARY SEQUENTIAL-ACCESS In iy n S If RANDOM-ACCESS MEMORY (SARAM ) IDT70825L • FEATURES: • • • • • • • • • • • 8K x 16 Sequential-A ccess Random -Access M em ory

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - M ilitary: 35/45ns (max.) - Com m ercial: 20/25/35/45ns (max.) Low-power operation - ID T70825S - A ddress based flags fo r b u ffer control

Contextual Info: HIGH-SPEED 1 28K 8K x 16 BIT PRELIMINARY SEQUENTIAL-ACCESS mJ708S ? RANDOM-ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. • FEATURES: • 8K x 16 Sequential-Access Random-Access Memory (SARAM™) - Sequential Access from one port and standard Random

Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) J d t) Integrated Device Technology, Inc. FEATURES: • • • • • H igh-speed access - M ilitary: 35/45ns (max.) - C om m ercial: 20/25/35/45ns (max.) Low -power operation

Contextual Info: LSI LOGIC L64740 DCT Quantization Processor DCTQ Description The L64740 performs many of the functions required after the DCT (Discrete Cosine Transform) and before the IDCT (Inverse Discrete Cosine Transform) of the proposed CCITT (Consultative Committee on

Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M

Contextual Info: DEC 1 9 LSI LOGIC 1990 L64740 DCT Quantization Processor DCTQ Preliminary Description The L64740 performs many of the functions required after the discrete cosine transform (DCT) and before the inverse discrete cosine transform (IDCT) of the proposed International

L64730

Abstract: variable length decoder DCT IDCT select mode lsi jpeg coder
Contextual Info: LSI LOGIC L64740 DCT Quantization Processor DCTQ Description The L64740 performs many of the functions required after the DCT (Discrete Cosine Transform) and before the IDCT (Inverse Discrete Cosine Transform) of the proposed CCITT (Consultative Committee on

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) Low-power operation - IDT70825S - Address based flags for buffer control

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

Contextual Info: Jdfc/ HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM IDT70825S/L Integrated D e\ ice Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Mem ory (SARAM™) - Sequential Access from one port and standard Random

Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)

Intel 82430

Abstract: IDT70825
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

so 54 t

Contextual Info: g MOTOROLA SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LS TTL/M SI SN 54/74LS 353 is a Dual 4-Input M ultiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs. The outputs may be individually switched to a high impedance state

EOB-3 E 24

Abstract: "SLDC"
Contextual Info: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential

Contextual Info: INTEGRATED DEVICE tflE ]> Hi MÛ2S771 0014232 'lOT « I D T PRELIMINARY HIGH SPEED 128K 8K X 16 BIT IDT70825S SEQUENTIAL ACCESS IDT70825L RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • • • • • • • • • •

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) • Low-power operation - IDT70825S

Contextual Info: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM

Contextual Info: \ S ÏN â HIGH SPEED 128K 8K X 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) y Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

IDT70825

Abstract: IDT70825L IDT70825S ym 3016
Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)

Contextual Info: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM J d t) IDT70824S/L Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Intel 82430

Abstract: IDT70824
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Contextual Info: TMC2311 TMC2311 CMOS Fast Cosine IVansform Processor 12 Bits, 15 Million Pixels Per Second Description Features The TM C2311, a high-speed algorithm specific ♦ Stand alone execution of 8-point forward or inverse ♦ cosine transform Continuous 8x8-point 2-D DCTs every 4.48 ¿is