| ic 70306
Abstract: CPH6002 marking GB 
Contextual Info: CPH6002 Ordering number : ENA0262 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6002 High-Frequency Medium-Power Amplifier Applications Features • • • High fT  fT=3.0GHz typ . Large current (IC=200mA). Large collector dissipation (800mW max).
 | Original
 | CPH6002 
ENA0262 
200mA)
800mW
900mm2
A0262-3/3 
ic 70306
CPH6002
marking GB | PDF | 
| ic 70306
Abstract: SANYO 5100 CPH6002 
Contextual Info: CPH6002 Ordering number : ENA0262 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6002 High-Frequency Medium-Power Amplifier Applications Features • • • High fT  fT=3.0GHz typ . Large current (IC=200mA). Large collector dissipation (800mW max).
 | Original
 | CPH6002 
ENA0262 
200mA)
800mW
900mm
A0262-3/3 
ic 70306
SANYO 5100
CPH6002 | PDF | 
| CPH6002
Abstract: 7018-002 marking GB IT10486 
Contextual Info: CPH6002 Ordering number : ENA0262 NPN Epitaxial Planar Silicon Transistor CPH6002 High-Frequency Medium-Power Amplifier Applications Features • • • High fT  fT=3.0GHz typ . Large current (IC=200mA). Large collector dissipation (800mW max). Specifications
 | Original
 | CPH6002 
ENA0262 
200mA)
800mW
900mm2
A0262-3/3 
CPH6002
7018-002
marking GB
IT10486 | PDF |