EN27LN2G08 Search Results
EN27LN2G08 Datasheets Context Search
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Contextual Info: EN27LN2G08 EN27LN2G08 2 Gigabit 256M x 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Organization |
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EN27LN2G08 it/512 9x11x1 |