EM 34 PHILIPS Search Results

EM4-EM34

Abstract: philips EM 34 EM34 em 34 philips EM 34 Scans-0017889
Contextual Info: PHILIPS EM 34 TUNING INDICATOR with two systems of different sensitivity INDICATEUR D'ACCORD avec deux systèmes de sensibilité différente ABSTIM1IANZEIGER0HRE mit zwei Systemen verschiedener Emp­ findlichkeit Heating : indirect by A.C. or D.C. series or parallel supply

BFR64

Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Contextual Info: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.

Contextual Info: VS Vision Syst em s Gm bH / Part Num ber 3873 ● ● ● ● ● ● ● ● ● ● Fe a t u r e s VIA Nano 1.3GHz VX800 chipset, 800/500MHz FSB 1 GB DDR2 SDRAM Express Card 34 slot USB interface HD Audio, speaker and microphone HDD/SSD drive bay 2 x Giga LAN

Contextual Info: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies

philips EM 34

Abstract: EM 4
Contextual Info: lM4l PHILIPS TUNING INDICATOR with two systems of different sens­ itivity INDICATEUR D ’ACCORD avec deux systèmes de sensibili­ té différente ABSTIMMANZEIGERÖHRE mit zwei Systemen von verschie­ dener Empfindlichkeit Dimensions in mm Dimensions en mm

PNP TRANSISTOR marking pr

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 08 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V).

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BGY241 UHF amplifier module P relim inary specification Philips Sem iconductors 1999 A p r 16 PHILIPS Philips Semiconductors Preliminary specification UHF amplifier module BGY241 FEATURES PINNING - SOT482B • 3.5 V nominal supply voltage

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BGY241 UHF amplifier module P relim inary specification Philips Sem iconductors 1999 M ar 25 PHILIPS Philips Semiconductors Preliminary specification UHF amplifier module BGY241 FEATURES PINNING - SOT482B • 3.5 V nominal supply voltage

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor

N50E

Abstract: PHP33N10E
Contextual Info: Philips S em iconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode field-effect pow er tra n sisto r in a plastic envelope featuring stable blocking voltage, fast sw itching and high therm al cycling perform ance

transistor marking 2d ghz

Abstract: BFG41OW
Contextual Info: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

BFG403W

Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

bcw 95 transistor

Abstract: transistor NPN 3474 transistor bc 209 npn bc 301 transistor
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low curren t max. 100 mA

"MARKING CODE P5"

Abstract: BFG425W
Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING • High power gain DESCRIPTION

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

SOT422A

Abstract: BLS3135-65
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES

transistor bc 649

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 17 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low curren t max. 100 mA

NFM61 SP

Abstract: tekelec TA 355 TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

2114 LC

Abstract: L381
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV63; BCV63B NPN general purpose double transistors Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistors

RZ3135B15W

Abstract: RZ3135B30W
Contextual Info: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

741 LEM

Abstract: AM/amplifier LEM 741
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

LM 886 IC chip

Abstract: TEKELEC te 358
Contextual Info: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s