EM 34 PHILIPS Search Results

Contextual Info: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies

"MARKING CODE P5"

Abstract: BFG425W
Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

BLS2731-10

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -10 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors

2P transistor

Abstract: l43 transistor
Contextual Info: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING

dual-gate

Abstract: rg168 str 1096 BF1101WR
Contextual Info: DISCRETE SEMICONDUCTORS BF1101 ; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

lg philips crt tube

Contextual Info: DISC RETE S E M IC O N D U C TO R S P relim inary specification File under D iscrete S em iconductors, SC05 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r

SMD CODE PACKAGE SOT23 489

Abstract: 1PS89SS04 1PS89SS05 1PS89SS06 SG 21 DIODE SMD DIODE marking S6 89 PS89SS05 Diode smd s6 95 em 34 philips marking za sc-89
Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET 1PS89SS04; 1PS89SS05; 1PS89SS06 High speed double diodes Preliminary specification Philips Sem iconductors 1999 Mar 01 PHILIPS Philips Semiconductors Preliminary specification 1PS89SS04; 1PS89SS05; High speed double diodes

Contextual Info: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J

T422A

Abstract: BLS3135-50
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BLS31 35-50 Microwave power transistor Preliminary specification File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Apr 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

HCT7404

Abstract: pin configuration of 7404 7404 pin diagram
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 74HC/HCT7404 5-bit x 64-word FIFO register; 3-state FEATURES high-speed applications. A higher independent, allowing synchronous • Synchronous or asynchronous data-rate can be obtained in

Marking Code 32

Abstract: l43 transistor transistor dk qe
Contextual Info: DISCRETE SEMICONDUCTORS a ffi S H E E T PDTC124XEF NPN resistor-equipped transistor 1998 Nov 11 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

251H

Abstract: lg philips crt tube
Contextual Info: DISC RETE S E M IC O N D U C TO R S Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC05 Philips Semiconductors 1998 Apr 09 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification Trip le v i d e o d r i v e r h y b r id a m p l i f i e r

PQC5001T

Abstract: PPC5001T FO-102
Contextual Info: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.

1PS59SB21

Abstract: MARKING CODE 21
Contextual Info: DISCRETE SEMICONDUCTORS 1PS59SB21 Schottky barrier diode 1999 May 05 Product specification Supersedes data of 1998 Jul 28 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS59SB21 DESCRIPTION

sot187-3

Contextual Info: Product specification Philips Semiconductors CMOS single-chip 8-bit microcontroller 83C654 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK IC20 OR DATA SHEET DESCRIPTION T he P 8 3C 65 4 S ingle-C hip 8-Bit M icro co n tro lle r is m anufactu red in an

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BGY588N CATV amplifier module Product specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Mar 29 PHILIPS Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING-SOT115J

BAT721A

Contextual Info: DISCRETE SEMICONDUCTORS BAT721 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Semiconductors 1999 May 06 PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB40 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES

HEF4047

Abstract: ci 4047B low power astable multivibrator ic EF4047B
Contextual Info: IN TE G R A TE D CIRCUITS HEF4047B MSI Monostable/astable multivibrator Product specification File under Integrated Circuits, IC04 Philips Semiconductors January 1995 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification , • -L. Mono st ab le/as ta ble multivibrator

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a plastic SOT23 envelope. • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.

transistor smd ba rn

Abstract: smd ya transistor ferroxcube 4322 Variable capacitor
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2048 UHF push-pull power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 14 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ KM110BH/2270 Angle sensor hybrid circuit Product specification Supersedes data of 1996 Nov 12 File under Discrete Semiconductors, SC17 Philips Semiconductors 1998 Mar 26 PHILIPS PHILIPS Philips S e m ico nd uctors

BAV23S l31

Abstract: diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 Philips Semiconductors 1999 May 05 PHILIPS PHILIPS Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES DESCRIPTION