ELECTROABSORPTION 2.5 GBPS Search Results

ea-modulator

Abstract: nrz optical modulator
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps

electroabsorption 2.5 Gbps

Abstract: nrz optical modulator HL1553
Contextual Info: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5

1550nm Laser Diode with butterfly pin package

Abstract: InGaAs PIN photodiode 2600 nm OPTO ISOLATOR TL STM-16 oc-48 laser diode driver 1550 1550nm Laser Diode butterfly 1550nm photodiode 1.6 Ghz Photodiode, 1550nm, butterfly package laser for 10 gbps DWDM
Contextual Info: Technical Data Sheet FIBEROPTICS DIVISION Jan 2002 ML47B3A 2.5 Gbps 1550nm DWDM Electro-absorption Modulator Integrated DFB Laser Module Features ¾ Electro-absorption modulator integrated with the 1550 nm MQW DFB laser ¾ 2.5 Gbps operation for OC-48/STM-16

Photodiode, 1550nm, butterfly package

Abstract: 1550nm Laser Diode with butterfly pin package samsung electro PIN Photodiode DWDM 10 Gbps STM-16 oc-48 laser diode driver 1550nm 1550nm Laser Diode butterfly PIN Photodiode 1550nm 4 ghz Samsung Electronics Company DFB electroabsorption modulator
Contextual Info: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION ML47B3A 2.5 Gbps 1550nm DWDM Electro-absorption Modulator Integrated Laser Module Features Ø Electro-absorption modulator integrated with a 1550 nm MQW DFB laser Ø 2.5 Gbps operation for OC-48/STM-16

stm 64 laser diode 1550 nm

Abstract: Electroabsorption modulator full C band 1550nm Laser Diode with butterfly pin package Laser Diode 1550 nm 10gbps 1550nm Laser Diode butterfly InGaas PIN photodiode, 1550 10Gbps laser for 10 Gbps DWDM OC-192 gpo InGaAs PIN photodiode 2600 nm Samsung rf module
Contextual Info: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION Preliminary ML48G2A-K 10 Gbps 1550nm DWDM Electro-absorption Modulator Integrated Laser Module Features ¾ Electro-absorption modulator integrated with a 1550 nm MQW DFB laser ¾ 10 Gbps suitable for OC-192/STM-64

stm 64 laser diode 1550 nm

Abstract: Electroabsorption modulator full C band STM 64 butterfly 7 pin GPO 80 Km laser for 10 Gbps DWDM Samsung Electronics Company DFB STM-64 1550nm Laser Diode butterfly Photodiode, 1550nm, butterfly package 10 Gbps laser DWDM connector SAMSUNG 30 PIN
Contextual Info: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION ML48G2A 10 Gbps 1550nm DWDM Electro-absorption Modulator Integrated Laser Module All specifications described herein are preliminary Features ¾ Electro-absorption modulator integrated with a 1550 nm MQW DFB laser

STM 64 butterfly 7 pin GPO 80 Km

Abstract: Photodiode, 1550nm, butterfly package Electroabsorption modulator stm 64 laser diode 1550 nm 10G 1550 optical laser in butterfly InGaas PIN photodiode, 1550 10Gbps laser for 10 gbps DWDM 1550nm Laser Diode butterfly eml dfb laser diode 1550 Electroabsorption modulator full C band
Contextual Info: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION preliminary ML48G2A-A 10 Gbps 1550nm DWDM Electro-absorption Modulator Integrated Laser Module Features ¾ Electro-absorption modulator integrated with a 1550 nm MQW DFB laser ¾ 10 Gbps suitable for OC-192/STM-64

EA Modulator Driver

Abstract: nrz optical modulator F0549951Q-C PRBS223-1
Contextual Info: Advance 01.09.17 ♦ Features F0549951Q-C 10 Gbps NRZ Data Rate • Up to 10 Gbps high speed operation • -5.2 V single power supply • Up to 50 mA p-p modulation current • Up to 20 mA bias current • Differential SCFL compatible interface • On-chip 50 Ω Input terminations

EA Modulator Driver

Abstract: nrz optical modulator F0549951Q-E PRBS223-1
Contextual Info: Advance 01.09.17 ♦ Features F0549951Q-E 10 Gbps NRZ Data Rate • Up to 10 Gbps high speed operation • -5.2 V single power supply • Up to 50 mA p-p modulation current • Up to 20 mA bias current • Differential SCFL compatible interface • On-chip 50 Ω Input terminations

Laser Diode 1550 nm 10gbps

Abstract: samsung grease CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR Integrated Modulator and Driver Module Samsung rf module laser diode 1550 nm 2.5 Gbps transponder 10 gbps 1550 nm dwdm 10 Gbps transmitter DWDM 10 Gbps laser DWDM laser for 10 gbps DWDM
Contextual Info: 1 Technical Data Sheet August 2002 OPTOELECTRONICS DIVISION ML48C2A-N 10 Gbps 1550nm Electro-absorption Modulator Integrated Laser Module with Coplanar Feedthrough All specifications described herein are preliminary Features Hermetically sealed 10-pin package with coplanar

1550nm Laser Diode with butterfly pin package

Abstract: electroabsorption modulator laser diode driver 1550nm samsung grease 10 Gbps transmitter DWDM laser for 10 gbps DWDM
Contextual Info: 1 Technical Data Sheet August 2002 OPTOELECTRONICS DIVISION ML48C2A-K 10 Gbps 1550nm Electro-absorption Modulator Integrated Laser Module with Coplanar Feedthrough All specifications described herein are preliminary Features Hermetically sealed 10-pin package with coplanar

EML DRIVER

Abstract: OKI EML Driver 25Gbps KGA8105 Oki modulator Ethernet Signal Transmission 100GbpsEthernet OKI EML
Contextual Info: Oki Semiconductor launches EML driver IC for 100Gbps Ethernet application - Targets more than 50% market share with world-leading small size and low power consumption - TOKYO, March 19, 2009 – Oki Semiconductor announces development of the new product KGA8105,

Photodiode receiver specification for 1550 nm

Abstract: laser DFB 1550nm 10mW 1550nm Laser Diode with butterfly pin package Samsung Receiver Samsung Electronics Company DFB laser DFB 1550nm 10mW single DL47B3A GR-253-CORE GR-468-CORE STM-16
Contextual Info: http://samsungfiberoptics.com Fiberoptics Division Telecommunication Network Business Samsung Electronics Co., Ltd. 7th Fl., Samsung Main Bldg. 250, 2-Ga Taepyung-Ro, Chung-Gu, Seoul, Korea 100-742 Phone: 82 2-751-3278 Fax: (82) 2-751-2678 E-mail: opto@samsung.com

Contextual Info: VSC7989 Data Sheet FEATURES ● ● ● ● ● ● ● ● APPLICATIONS Rise and fall times less than 35 ps High-speed operation up to 10.7 Gbps NRZ data Differential inputs Single-supply operation CML-compatible data inputs On-chip 50 Ω input terminations

MTX52EW

Abstract: MTX52EW-3 tomtom 1550nm Laser Diode butterfly Photodiode, 1550nm, butterfly package Multiplex inc mtx52iw 1550nm Laser Diode with butterfly pin package 1S30 STM-16
Contextual Info: TW idfopbx, Ino. MTX52EW 2.5Gb/s Electro-Absorption Modulated Laser EMU ♦ W DW F ib e r O p tic Telecom m unication ♦ S T M -16 and O C -48 high-speed, lo ng-haul tran sm issio n system s ♦ H igh-speed data a p p lica tio n s FEATURES: ♦ 2m W O utput Power

wavelength selective switch

Abstract: waveguide selective switch WDFB40 MQW SOA Arrayed Waveguide Grating WDM Filter spectrum wavelength selective filter for wdm photonic crystal fiber
Contextual Info: NEXT STEP 1 TECHNOLOGICAL TRENDS OF OPTICAL COMMUNICATION DEVICES FOR DWDM Hiroshi Nakano Introduction Increasingly heavy Internet traffic is forcing manufacturers to produce larger capacity trunk networks in order to cope with the consequent explosion in demand from

HL1570AF

Abstract: LD 1610
Contextual Info: HL1570AF 1.6 µm Laser Diode with EA Modulator Under Development Description The HL1570AF is a 1.6 µm L-BAND InGaAsP distributed-feedback laser diode (DFB-LD) with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode.

Ea 1530 A

Abstract: ea 1530 HL1566AF laser diode 1550 nm Gbps laser diode 10 gbps laser diode 1550 nm 2.5 Gbps laser diode 1530 nm 2.5 Gbps 1550 communication laser diode
Contextual Info: HL1566AF 1.55 µm Laser Diode with EA Modulator Description The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems,

Contextual Info: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Contextual Info: HL1553 1.55 Jim Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 |jm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is

Ea 1530 A

Abstract: nrz optical modulator HL1566AF Hitachi Scans-001
Contextual Info: HL1566AF 1.55 ¡im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

Contextual Info: HL1553 1.55 |um Laser Diode with EA Modulator HITACHI Description The HL1553 is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulatoris integrated with the laser diode. It is

Ea 1530 A

Contextual Info: HL1566AF 1.55 pm Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 pm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integratedwith the laser diode. It is

Ea 1530 A

Abstract: 1553 optical
Contextual Info: HL1553-1.55 pm Laser Diode with EA Modulator Description The HL1553 is a 1.55 firn InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW ) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as