ELECTRICALLY Search Results

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

2N3051

Abstract: 2N3050 2N2412 2n3049
Contextual Info: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

ASTM D374

Abstract: ASTM D2240, D412 ASTM D412 ASTM d412 ASTM D2240 D2240 ASTM d792 ASTM-D-257 ASTM-D-374
Contextual Info: TG2030 Ultra Soft Thermal Conductive Pad Features Superior thermal conductivity Highly compressible Naturally tacky Low Shore OO hardness Low oil bleed Electrically insulating Applications Electronic components: IC - CPU - MOS LED - M/B - P/S - Heat Sink LCD-TV - Notebook PC - PC Telecom Device - Wireless Hub.etc.

M68HC11 reference manual

Abstract: Motorola 52 pin PLCC EEPROM MCU MC68HC11E9 52 PIN PLCC MOTOROLA
Contextual Info: Order th is document by BR775/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC711E9 Technical Summary 8-Bit Microcontroller Introduction The MC68HC711E9 high-performance microcontroller MCU is an electrically programmable ROM (EPROM)-based version of the MC68HC11E9 and includes similar features — 12K bytes of

Contextual Info: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

smd JSs diode

Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

IRFP250

Contextual Info: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC

KMC-125

Abstract: kMc Series TAH20PR050J
Contextual Info: The TAH20 is a completely encapsulated thick film resistor in the TO220 package outline. Rated for 20 watts @ 25°C case temperature, these resistors are electrically isolated, and molded in a high temperature case. Designed for heat sink mounting, the symmetrical

RW-3009

Abstract: versafit RW-3009 TYCO RW3009 raychem heat shrink LR-31929 AMS-DTL-23053 316F E35586
Contextual Info: Versafit Highly flame-retardant, low recovery temperature, heat-shrinkable tubing Electrically insulates and protects in-line components, disconnect terminals, and splices. • Bundles wires for very flexible light-duty harnesses. ■ Identifies or color-codes wires,

Contextual Info: ASMT-Jx3x 3W Mini Power LED Light Source Data Sheet Description Features The 3W Mini Power LED Light Source is a high performance energy efficient device which can handle high thermal and high driving current. Option with electrically isolated metal slug is also available.

3045CTP

Abstract: 3045CT
Contextual Info: MBR3045CTP NEW PRODUCT 30A SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • Low Forward Voltage Drop Soft, Fast Switching Capability Schottky Barrier Chip ITO-220S Heat Sink Tab Electrically Isolated from Cathode UL Approval in Accordance with UL 1557, Reference No.

MIL-R-5757

Abstract: MS27247-1 MS27245 27245 MS27247
Contextual Info: CII Low Signal Relays Double Pole, Electrically Held, 10 Amps and Less Product Facts • Hermetically sealed ■ Up to 10 amps switching ■ ■ ■ High shock & vibration ratings Optional terminals & mounting styles DC, AC & diode-suppressed coils Electrical Characteristics

AC-DC Converters

Abstract: RESISTOR VDR
Contextual Info: X Series Data Sheet 375 and 500 Watt AC-DC Converters Input range 85 to 264 VAC with PFC 1 or 2 isolated, regulated outputs up to 96 V Class I equipment Features • RoHS lead-solder-exempt compliant • Electrically and mechanically rugged DIN-rail front end