EK 175 Search Results

AS1301EHT-ADJ

Abstract: AT91SAM9 SDRAM CP2122ST AS1301E dm9161aep board RFU14
Contextual Info: SAM9G15-EK SAM9G25-EK SAM9G35-EK SAM9X25-EK SAM9X35-EK . User Guide 11115A–ATARM–27-Jul-11 1-2 11115A–ATARM–27-Jul-11 Evaluation Kit EK User Guide

qm431

Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
Contextual Info: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N

Nanotec Electronic GmbH

Contextual Info: HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH T R EK , LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TR EK , LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TR EK , LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontano K2M 2A8

AT91SAM9260-EK Evaluation Board User Guide

Abstract: AT91SAM9260 errata dm9161aep AT91SAM9260-EK R1100d181c DM9161A Coin selector CLE SG-8002JC-50.0000m-PCB dm9161 bridge marking Z6
Contextual Info: AT91SAM9260-EK Evaluation Board . User Guide AT91SAM9260-EK Evaluation Board User Guide 6234C–ATARM–22-Mar-07 Table of Contents Section 1 Overview . 1-1

oszillator

Abstract: ZEN xf 2 DES 4
Contextual Info: CK 3 CK 3 Oktode Die CK 3 ist eine Oktode nach dem Vierbündelprinzip. Sie ist bis auf die Heizdaten mit der Vierbündeloktode EK 3 für Wechselstromempfän­ ger identisch. Nur wurde wegen des 100-Volt-Betriebes das sechste Gitter etwas geändert. Die für die EK 3 gemachten Angaben gelten auch

Contextual Info: Feed-through terminal blocks Ex SAK 2.5/E EK 2.5N/E SAK 4/E EK 4/E T Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC EC type examination certificate EEx i voltage EN 50020 EEx i/EEx i distance > 6 mm1

Contextual Info: EVALUATION KIT >LL&*&+#'-+#;A RF Power Transistor Part Number: HVV0405-175 Evaluation Kit Part Number: HVV0405-175-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram

EK 110

Abstract: SK825 ABB EK 210 SK824 44XXX SK82
Contextual Info: 1 3 Fax 1SFC 101012D0201 Version 0 2001-12-07 Peter Carlsson SECRL/M +46 21 320727 +46 21 320273 E-mail peter.x.carlsson@se.abb.com Doc. no. Rev. ind. Date From Dept. Phone Environmental Information Product name EK 110, 150, 175, 210 ABB Identity number

10tq

Contextual Info: P D -2.057B International Ek>r]Rectifier 10TQ. SERIES SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Description/Features Characteristics 10TQ. Units lF AV R sctafflular waveform 10 A 35 to 45 V lFSM @ tp -5 |jssin o 1050 A VF 0.49 V -55 to 175

protek 506

Abstract: 1N6357
Contextual Info: TVS •VPRO EK DEVICES Tnansient Voltage Suppressors 1N6356 . Engineered solutions for the transient environment ICT-5 thru thru 1N6372 IC T-45C DESCRIPTION This specification sheet defines a prem ium series of Silicon Transient Voltage Suppressors specifically designed

P110a

Abstract: P65a DIODE 5K P58A
Contextual Info: TVS • 0 PRO EK DEVICES Tnansient Voltage Suppressors 5 K P 5 .0 thru rB \ . Engineered solutions for the transient environment 5K P110A DESCRIPTION This specification sheet defines a series of 5kW Silicon Transient Suppressors used in applications where large

5KE200A

Contextual Info: TVS • 0 PRO EK DEVICES ^ rs\ . Engineered solutions fo r the transient environment Transient Voltage Suppressors 1.5KEB.8 thru 1.5KE40QA DESCRIPTION This TVS family is a series of silicon transient voltage suppressors for use in applications where large voltage

NT5CB256

Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features  Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current

NT5CB256M16

Abstract: NT5CC256M16 NT5CC256
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800

Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current

NT5CB256M16CP

Abstract: NT5CC256M16CP NT5CC256M16CP-DI NT5CC512M8CN DDR3-2133-CL14 NT5CB512M8CN NT5CC512M8CN-DII NT5CB512M8CN-CG NT5CB256M16 NT5CC256M16CP-DII
Contextual Info: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -BE* -CG* -DI/DII* -EK* -FL* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Speed Bins Units tCK Parameter Min. Max. Min. Max.

kvp 68A

Abstract: XMR5 xlr10
Contextual Info: DIODES DIODES, HIGH VOLTAGE, AXIAL LEAD Standard — Fast — Ultra-Fast Recovery CURRENT VOLTS RECOVERY ns SURGE(A) SERIES PAGE STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD 300 5 25-35 15 12 10 8 5 3W HV EF, EG, EH EK EM EP ER

MT29F2G08aba

Abstract: SiI9022A HY27UF082G2Btpcb PE19A MT29F2G08ABAEAWP-IT
Contextual Info: ARM-based Embedded MPUs SAMA5D3x-EK User Guide USER GUIDE Introduction This user guide introduces the evaluation kits for the Atmel SAMA5D3 series embedded MPUs listed below:  SAMA5D31  SAMA5D33  SAMA5D34  SAMA5D35  SAMA5D36 It pertains to the following evaluation kit references:

Contextual Info: TFM-1XX-XX-XXX-D-XXX NOTES: REVISION EK 1. C REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM PUSHOUT FORCE FOR CONTACTS, WELD TABS AND THREADED INSERTS: 12 OZ. No OF POSITIONS 3. MINIMUM LOCKING CLIP RETENTION: 8 OZS. LEAD STYLE -01, -02, -03: -02 THRU -50 ALL

125BT

Abstract: 125bz EK-XX-125BZ-10C EA-XX-125BZ-350 SK-XX-125BZ-10C wk xx 125bz 10C 125BZ-350
Contextual Info: 125BZ Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-125BZ-350 ED-DY-125BZ-10C EK-XX-125BZ-10C WA-XX-125BZ-350 WK-XX-125BZ-10C

EP-08-250BF-350

Abstract: EA-XX-250BF-350 WK-XX-250BF-10C 250BF S2K-XX-250BF-10C 11293 250BM 250BG
Contextual Info: 250BF Vishay Micro-Measurements General Purpose Strain Gage - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-250BF-350 ED-DY-250BF-10C EK-XX-250BF-10C S2K-XX-250BF-10C WA-XX-250BF-350

WK-XX-125AD-350

Abstract: EA-XX-125AD-120 ED-DY-125AD-350 WD-DY-125AD-350 125AD EP 08 125AD WA-XX-125AD-120
Contextual Info: 125AD Vishay Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-125AD-120 ED-DY-125AD-350 EK-XX-125AD-350 WA-XX-125AD-120 WK-XX-125AD-350

2N651A

Abstract: 2N650A WE VQE 23 F 175C 2N652A 2n85
Contextual Info: M IL -S -19300/175C 10 October 1958 SUPERSEDING M IL -S -19500/175B 2 July 1384 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, L O w -PO w EK TYPES 2N650A, 2N651A, AND 2N652A Thi» specification is m andatory fo r u se b y a ll D ep art­