EIGHT P-CHANNEL MOSFET ARRAY Search Results

EIGHT MOSFET ARRAY

Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
Contextual Info: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured

EIGHT MOSFET ARRAY

Abstract: octal MOSFET ARRAY AN0132NAR EIGHT n-channel MOSFET ARRAY Mosfet Array 15 pin 10X10
Contextual Info: A T & T MELEC I C 25E P • ODSOQEb DG02fl4T 1 ■ OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY AN0132NAR ADVANCE T-H3-ZS Monolithic N-Channel Enhancement-Mode Description The AN0132NAR Octal High-Voltage N-Channel M OSFET Array contains eight Independent N-Channel DM OS drivers

EIGHT p-channel MOSFET ARRAY

Contextual Info: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VDD RO ON IO(ON) IO(OFF) Order Number/Package (max) (max) (min) (max) SO-16 -320V 700Ω -15mA -1.0nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel.

EIGHT MOSFET ARRAY

Abstract: ns-1a AP0332CG AP0332 high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY
Contextual Info: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VOO RO ON IO(ON) IO(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel.

high voltage piezoelectric transducer

Abstract: AP0332 AP0332CG AP0332ND EIGHT MOSFET ARRAY bare Die mosfet
Contextual Info: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VDD RO ON IO(ON) IO(OFF) Order Number/Package (max) (max) (min) (max) SO-16 Die -320V 700Ω -15mA -1.0nA AP0332CG AP0332ND *Average current per channel, measured with all eight channels connected in parallel.

Contextual Info: AP0332 S u p e r te x in c . 8 P-Channel Latchable Power MOSFET Array Ordering Information _ 'O ON (max) (max) (min) (max) SO-16 Die -320V 700 ohms -15mA -1.875nA AP0332CG AP0332ND o o > R o (o n ) 1 * •O(OFF) Order Number/Package 'Average current per channel, measured with all eight channels connected in parallel.

Contextual Info: Su pertex inc. AP0332 8 P-Channel Latchable Power MOSFET Array < Ordering Information Order Num ber/Package ^O ON b(OFF) (max) (max) (min) (max) SO-16 -320V 700Í2 -15mA -1 .OnA AP0332CG o o ^O(ON) *Average current per channel, measured with all eight channels connected in parallel

EIGHT p-channel MOSFET ARRAY

Abstract: EIGHT MOSFET ARRAY AP0332 AP0332CG AP0332ND high voltage piezoelectric transducer
Contextual Info: – – E T E L OBSO AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VDD RO ON IO(ON) IO(OFF) Order Number/Package (max) (max) (min) (max) SO-16 Die -320V 700Ω -15mA -1.0nA AP0332CG AP0332ND *Average current per channel, measured with all eight channels connected in parallel.

Contextual Info: AN0332 O i Supertex inc. 8 N-Channel Latchable Power MOSFET Array Ordering Information v DD Ro on> ^O(ON 1O(OFF) * (max) (max) (min) (max) SO-16 Die 320V 350 ohms 25mA 1,875nA AN0332CG AN0332ND Order Number/Package •A verage current p e r channel, m easured with all eight channels connected in parallel.

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

EIGHT MOSFET ARRAY

Abstract: EIGHT n-channel MOSFET ARRAY
Contextual Info: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG

ap0420

Abstract: AP0432
Contextual Info: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V

Contextual Info: FEATURES • ■ ■ ■ ■ 2048 x 2048 Photosite Array 15fxm x 15pm Pixel 30.72mm x 30.72mm Image Area Near 100% Fill Factor Multi-Pinned Phase MPP Option a Readout Noise Less Than 7 Electrons at 250k plxels/sec a Dynamic Range 10000:1 a Three Phase Buried Channel NMOS

plotter

Abstract: mosfet p-channel 300v EIGHT p-channel MOSFET ARRAY
Contextual Info: HT0130 8-Channel Logic to High-Voltage Level Translator Ordering Information Package Options Device 20 Lead Plastic DIP HT01 Plastic SOW-20* HT0130P Die HT0130WG HT0130X * Sam e as S 0 -2 0 300 mil w ide body. Features General Description □ Operating voltage up to 300V

CCD442A

Abstract: CCD442
Contextual Info: LDWAL CCD442A 2048 x 2048 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ 2048 x 2048 Photosite Array 15^m x 15fim Pixel 30.72mm x 30.72mm Image Area Near 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons at 250k

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These

Contextual Info: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These

mosfet p-channel 300v

Abstract: supertex VN
Contextual Info: SUPERTEX INC Ql D E | 0773215 00017^0 5 8-Channel Logic To High-Voltage Level Translator Ordering Information Part Number/Package 20 Lead CERDIP 20 Lead Plastic DIP 20 Terminal Ceramic LCC Plastic SOW-20* Die in waffle pack HT0130D HT0130P HT0130LC HT0130WG

EIGHT p-channel MOSFET ARRAY

Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
Contextual Info: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =

Contextual Info: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =

Contextual Info: . yjj Supertex inc 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information_ O rd er N um b er / Package BV qqs m in If B V DSS/ F*ds(on) (m ax) I dss* V ds = -100V Max -160V 700Q -15mA -1.5nA

8 Channel Power Mosfet Array

Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
Contextual Info: SUPERTEX INC Dl dÌ J 07735*15 DDQ17SÖ Q 7 ~ V ^ ^ 5 ~ AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information Order Number / Package b v dss/ 1 * V DS = BVd0S min ^D S {O N ) ' d (ON) (max) (min) 100V Max 1nA 'D SS

Contextual Info: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max