EIAJ-RRM 12 D Search Results

a473

Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Contextual Info: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram

SE014

Abstract: t17c
Contextual Info: SE014 i a COLLMER SEMICONDUCTOR INC 4flE D 52307*15 GG0173T 575 • C O L ■ O u tlin e Drawings SCHOTTKY BARRIER DIODE ■ Features • Surface m ou nt device • Low V F « Super high speed sw itchin g. « H igh reliability by planer d e s ig n . JEDEC

diode c48

Abstract: 10DL2C 10DL2C48A 10FL2C48A U10DL2C48A U10FL2C48A 10FL2
Contextual Info: TOSHIBA 10DL2C48A, 10FL2C48A#U 10DL2C48A#U 10FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V

ESAB82M-004

Abstract: ccd120 WA3T
Contextual Info: ESAB82M-004 5 a è±/J'i *^ ì - k 5sa% y H r — ' * l) 7 ÿ 4 ‘ Outline D raw ings K SCHOTTKY BARRIER DIODE 4 .5 MAX. 2.0 o -o U z : Features JEDEC SC-67 EIAJ Insulated package by fully m o ld in g . • 1&VF • Low VF fcT-K C onnection Diagram Super high speed sw itching.

SE046

Abstract: sin wave to square 15X15 oc sc62
Contextual Info: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •

Contextual Info: COLLMER SEMICONDUCTOR INC MAE D 52307=12 0 0 G1 7 4 5 5 7 1 • COL S E 0 3 6 i .o a " T - 0 'S - 1 3 O utline D raw ings SCHOTTKY BARRIER DIO DE L6 MAX. 4.6 MAX 18 MAX to <M 0.55 MAXJ-J. 0.44 MAX. I 0.48 MAX. 15_ 15 3.0 Features Surface m ounting devices

A333

Contextual Info: SC802-04 1.0 A) i s a v b l r —' < x) T ¥ 4 ' t —Y : Outline Drawings SCHOTTKY BARRIER H 4- 3 3 135lM yJr-T~. /* m m i . j => 12 ih I p 04 U51« 1 IZ1“ 5-l-oj • # d l : : Features • «iSSIK ^IIg JEDEC - EIAJ - Surface m ount device • ffiVp

2SC5449

Abstract: 54KK T01A Hitachi 2SC5449
Contextual Info: Mcnrtry o c * * * * 02. 2OT0 1 * ê PV PfOm S i r * Moyw To m . . 2SC5449 . . -N PN HITACHI i . * n i S i w I * r > * C«- M U fc • • 20* r t * W I TO-m> • • • IO-3MVM 1 B m 2. Coopctor 3 E rrM f A D > 20 B -5 44 < 7 • «1 • • P v 2ot7 z Ml

Contextual Info: TO SH IB A 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A, 20FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V

Contextual Info: 9097250 T OS HL BA D ISCRETE/O PTO 3 9 G HIGH-SPEED THYRISTOR T O S H I B A - C D I S C R E T E / O I SH50L13A [ P T O 8 0 0 V . " Ï Ï } d F | ^ 1 7 2 2 2 9 5 8 T ~ S S O G D S S T f l " ' 1 3 1 | ~ ~ j Jnit in mm 5 0 A MAXIMUM RATINGS C H A R A C T E R IS T IC

DIODE 20FL2C

Contextual Info: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

ESAC93-02

Abstract: SC-65 T151 T460 T810 T930 A276
Contextual Info: ESAC93-02 12A I f e S i i f c i t S K • W K ' + i i : O u t lin e D r a w in g s LOW LOSS SUPER HIGH »PEED RECTIFIER ■ 4 # « : Features • te V F JEDEC EIAJ Low VF SC-65 • X-f S uper high speed sw itch in g . Connection Diagram • 7 V - * - & « c j& A flm tt

TECO

Abstract: ESAC93M-02 T151 T810 t15i
Contextual Info: ESAC93M-02H2A If l - •'!'/£: Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features O-frll 1.3-5 JEDEC Insulated pa ckag e by fully m o l d in g . EIAJ • IR V k Lo w V|. m a tt Connection Diagram S u p e r hig h speed s w itc h in g , mnzja&m ma

sc802

Contextual Info: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.

single phase full bridge inverter

Abstract: K2-SS
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O

S6 mark

Abstract: ADE-208-016B S6 59A
Contextual Info: ADE-208-016B Z HRW0503A Silicon Schottky Barrier Diode for Rectifying HITACHI Features Rev. 2 Sep. 1994 Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • M PA K p ack age is su itab le for high d en sity surface mounting and high speed assembly.

Contextual Info: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design

H125

Abstract: T151 T810 TS805C04
Contextual Info: T S 8 0 5 C 0 4 2 oa I -4 :fr — K : Outline Drawings S C H O T T K Y B A R R I E R D IO D E 4.5*« • I # I Features JEDEC Surface mount device. EIAJ Super high speed switching. Connection Diagram High reliability by planer design I Applications * * * * * * *

ESAD9

Abstract: 20A 100 V Low VF
Contextual Info: ESAD92-02 20A ( 200V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF

Contextual Info: S C 8 0 2 - 0 9 i OA * ± /J ' t y T ÿ ' l ï ï —K SCHOTTKY BARRIER K • W ï f é 't ii : O utline D raw ings DE 3 3*“ a [j U 5i<M ? *il| +W 5.1-0? *4 'H - 0 4 I Features I JED EC — EIAJ — Surface mount device • ffiVF Low VF 135* mm* I 12-“

Contextual Info: ESAC25 C,N,D (10A) (200V to 400V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 1.2 14 -0.5 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB

800VHZ41

Contextual Info: TOSHIBA FAST RECOVERY DIODE 800VHZ41 Unit in mm Silicon Diffused Type High Power Applications • The Electrodes are Isolated from Case. • Average Forward Current : IF AV = 800A • Peak Repetitive Reverse Voltage : VRRM = 1700V Equivalent Circuit d Q- H-° &

Contextual Info: ESAC93-02 12A ( 200V / 12A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF

Contextual Info: ESAC33 C,N,D (8A) (200V / 8A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 14 -0.5 1.2 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB SC-46 Connection diagram