EH 050 AP Search Results

UP Series

Abstract: leoco 2420s04000 22-23-2021 63849-1 MOLEX 4 pin SEH-001T-P0.6 EN55022-B EN61000-4-2 EN61000-4-3 EN61000-4-4
Contextual Info: TLP150 Series Single output AC-DC POWER SUPPLIES • • • • • • • • • • • 150 W AC-DC Universal Input Switch Mode Power Supplies 1 NEW Product 150 W on main channel with only 200 LFM Low profile fits 1U applications Active PFC and EN61000-3-2 compliant

10BQ040

Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
Contextual Info: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power

CENG-0001

Abstract: HJF-A-500
Contextual Info: HJF-A-500 SQ 0/180° HYBRID JUNCTION REV: 001, 03/11/02 • SPACE QUALIFIED • 5 - 1000 MHz • BROADBAND, HIGH ISOLATION SERIES 05 TECHNICAL DESCRIPTION / APPLICATION The HJF-A-500 SQ hybrid junction covers a frequency range of 5 - 1000 MHz using a special lumped

Contextual Info: HJF-A-500 SQ 0/180° HYBRID JUNCTION REV: 001, 03/11/02 • SPACE QUALIFIED • 5 - 1000 MHz • BROADBAND, HIGH ISOLATION SERIES 05 TECHNICAL DESCRIPTION / APPLICATION The HJF-A-500 SQ hybrid junction covers a frequency range of 5 - 1000 MHz using a special lumped

10BQ040

Abstract: EIA-541 F7101 IRF7101 IRF7811AV 2440 so-8
Contextual Info: PD-95265 IRF7811AVPbF IRF7811AVPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free

smoke detector schematic diagrams

Abstract: diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA
Contextual Info: AQV410EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form B) Type FEATURES 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

EI-19

Abstract: C400 ph0i PJ-204
Contextual Info: PACKAGE DIAGRAM OUTLINES SOJ PACKAGE DIAGRAM OUTLINES SOJ Continued DCN 27644 DWG # S Y M B □ S020- JEDEC VARIATION DWG £ □ AD L MIN NOM MAX A .120 .130 .140 A1 .078 .086 .095 D .500 .506 .512 E .335 .340 .347 E1 .292 .296 .300 E2 .262 .267 .272 DATE

smoke detector schematic diagrams

Abstract: smd 4-pin 61re AQY410EHA ultrasonic vibration detector smd led datasheet smoke DETECTOR CIRCUIT DIAGRAM Transistors Diodes smd e2 AQY410EHA datasheet 808 4PIN
Contextual Info: AQY410EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (FormB) 4-pin Type 3. Compact 4-pin DIP size The device comes in a compact (W)6.4 x (L)4.78 × (H) 3.2mm (W).252 × (L).188 × (H).126inch, 4-pin DIP size 4. Controls low-level analog signals PhotoMOS relays feature extremely low

smoke detector schematic diagrams

Abstract: AQW610EHAZ Transistors Diodes smd e2 diagram 3 phase heater schematic diagram heater ultrasonic Phase Frequency detector AQW610EHAX AQW610S AQY410EH AQY410S
Contextual Info: AQW610EH PhotoMOS RELAYS GU General Use -E Type 2-Channel (Form A Form B) Type 9.86 .388 FEATURES 6.4 .252 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch control of low-level analog signals without distortion. 5. High sensitivity, high speed response. Can control a maximum 0.14 A load current with a 5 mA input current. Fast

WH 8PIN

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atc111

Abstract: 111SF220M100TT
Contextual Info: AMERICAN TECHNICAL fila C m _34E. » ' ' " ' ‘ 077340=1 000072=! M • ATC/4-05-q£-0? - " "" " ' «P HIGH K DIELECTRIC SERIES 'âÂiièsooô'-vi.:'*;^ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications

ZD 607

Abstract: Q2004D3 Q2004D4 Q4004D3 Q4004D4 Q5004D3 Q5004D4 Q6004D3 Q6004D4 Q7004D4
Contextual Info: V-PAK TO-251AA MT2 MT1 G D-PAK Triacs 4 Amps 11 General Description 7HFFRU V QHZ OLQH RI '3$. DQG 93$. WULDFV LQFOXGH VXUIDFH PRXQW GHYLFHV ZLWK FXUUHQW FDSDELOLWLHV WKURXJK  DPSHUHV 9ROW DJH UDQJHV DUH DYDLODEOH IURP  WR  YROWV 9DULDWLRQV RI GHYLFHV FRYHUHG LQ WKLV GDWD VKHHW DUH DYDLODEOH IRU

Z59 diode

Contextual Info: ADVANCED POWER TECHNOLOGY QfiE D | OSST'iQI QQQQlñT 1 | ADVANCED r'lñ'15 POWER T e c h n o lo g y APT4055BN 400V 12.0A 0.55 Ü APT3555BN 350V 12.0A 0.55 fl POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

smd 6PIN "vhz"

Abstract: SIEMENS Germanium
Contextual Info: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600

Contextual Info: r 7 TH 5 DRAWING COPYRIGHT IS UNPUBLISHED. RELEASED 19 BY AMP INCORPORATED. ALL FOR P U B L I C A T I O N R IC 4 5 6 2 3 , 19 DI ST LOG HTS R E S E R V E D . REVISIONS 00 AD D ESCRIPTION B ±„001 TA I D PER 0 G 3 C - 0 1 14-02 RB 0 EJU N 0 2 D5 01 5 ± . 001

M411024HP-15

Contextual Info: AT&T DATA SHEET M411024xP-12 & -15 Dynamic RAM FEATURES • Low-power, high-performance CMO£? process • No cycle time penalty for Read-Modify-Write • 1,048,576 words x 1-bit organization • RE Only refresh • 120/150 ns access time from RE • High-impedance output during refresh

Contextual Info: *7 0 / 4N54 Hermetic Hexadecimal Display With Logic Texas Optoelectronics, Inc. DESCRIPTION A hermetically sealed solid-state hexadecimal display with on-board memory latch, decoder and driver. The 4N54 decodes positive 8421 BCD logic inputs and displays the appropriate hexadecimal character

Contextual Info: REVISION AY DO NOT SCALE FROM THIS PRINT NOTES: 1. MINIMUM PUSHOUT FORCES: AP ASSEMBLY: 12 LBS. APA ASSEMBLY: 5 LBS. APO ASSEMBLY: 5 LBS. A PS ASSEMBLY: 12 LBS. 2. MAXIMUM ALLOWABLE BOW: TI03 INCH PER INCH. 3. <C> REPRESENTS A CRITICAL DIMENSION 4. MAX HEIGHT VARIATION BETWEEN PINS:

Contextual Info: TUB ISUNPUBUSHEB. COPYRIGHT19 | RQÖiEB MR PUBLICATION BYANPINCORPORATED. *RESEWvïB. .là . ux DIST AD 00 □4.84±0.10 .6 2 5 INI 1111 in r in r iU l CO IU l IIII 1.15 [III T im — T il n I1II 112.701 ( .5 0 0 Ì.0 1 ) (.0 4 5 ) D (2.5 2 5 ) 0 3 TYP.

pinFET

Abstract: 2451B D0003T1
Contextual Info: OPTICAL conn PRODUCTS INC OCP S7E T> m 2451b41 D0003T1 AIM M PCO RTZ/CTZ Transimpedance -r-w-H PINFET Receivers Features □ Long Wavelength 1100-1600 nm □ One single version for both SONET OC-3 and OC-12 Data Rates □ High Detection Sensitivity EH ED

20C90

Abstract: SSI BUS 20C89 ssi 202 angry bird SSI20C89 SSI K212 80C50 SSI 201 SSI20C90
Contextual Info: _ ^br\ Alimisitskms TM INNOVATORS IN I INTEGRATION _ 7 ' SSI 263A Phoneme Speech Synthesizer Datasheet DESCRIPTION The SSI 263A is a versatile, high-quality, phonemebased speech synthesizer circuit contained In a single monolithic CMOS Integrated circuit. It is deslgped to

62a7

Abstract: A6537-A3A7
Contextual Info: NOTES: RTTT] across 1. all SOLDER CHARGES QQQA-X r CONTACTS- COPPER ALLOY SOLDER CHARGE: SEE CHART -LEAD CODE 1 = TIN 0 = TIN /LEAD 2. O VE R A LL NICKEL 3. •DIM M ±.010 - _L xm |«*Y»|*Lr"|BU"|

Contextual Info: HOLTEK HT16014 80-Segment Dot Matrix LCD Driver Features • • • • • Power supply: 2.7V to 5.5V VLCD operating voltage: 10V~30V VDD-Ve e A pplication LCD duty selection from 1/64 to 1/256 80 in tern al LC D driver circuits D ata tran sfer rate: 6.0 MHz

Contextual Info: PD – 96114A IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description These HEXFET Power MOSFET's in package utilize the lastest processing techniques to achieve