EH 002 Search Results

Contextual Info: Chip diodes, medium barrier C haracteristics at 25° C N /A Test C onditions TYPE EH 306 EH 316 EH 317 EH 318 EH 320 CONFIGU. C C C C C Frequency Range 10 10 10 10 10 GHz 1 -4 4 -8 6 - 12 8 -1 5 12-18 SSB N oise Figure J unction C apacitance NFssb <D dB 5.5

9410-2SL-1

Abstract: 9702-0SL-1 9702-1SL-1 9402-6SL-1 9410-1SL-1 9702-2SL-1 9410-3SL-1 9402-8SL-1 R7301 9402-2SL-1
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7735

Abstract: M37733EHBFP
Contextual Info: GRADE A MESC TECHNICAL NEWS No.M7700-40-9809 M37733/35/36 EH/MH Revision and Specification Modification Information The following is a description of corrective revisions and partial specification modification made on the 7733/35/36 EH/MH 124-Kbyte ROM version .

Contextual Info: • TW O A N D THREE PORT RF PIN SW ITCH MODULES This series of SP2T and SP3T RF switches uses high voltage PIN and NIP diodes, from the EH 80000 and EH 89000 families, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.

Contextual Info: JST Crimp 2 .5 m m .0 9 8 " pitch L Radial Tape EH CONNECTOR H T F e a tu re s - • Compact and slim This connector is designed to be compact and unusually thin.

Contextual Info: _ ypO D U EH H 1 COMPONENTS r/ AC548 u 5 TO 500 MHz TO-8 CASCADABLE AM AC548 T y p ic a l V a lu es High Third Order I. P. . Low Noise Figure.

E 212 fet

Abstract: 2N3820 philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti
Contextual Info: PHILIPS MIE INTERNATIONAL Data sheet status Preliminary specification date o f issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It is intended for use in general purpose amplifiers. D EH 711002b

Contextual Info: CBC915 EnerChip EP Energy Processor EnerChip™ Energy Processor for Energy Harvesting Applications Features • Use any type of Energy Harvesting EH transducer: Light, Vibration, Thermal, RF, etc. Advanced Maximum Peak Power Tracking Algorithms for High Eficiency Energy Conversion

Contextual Info: j r / - - ^ O a U EH H 2/99 COMPONENTS A D / in - f n M r i4 U Ì » TO 4000 MHz T0-8B CASGADABLE AMPLIFIER AR4019 Typical Values AR4019 Ultra Broad B an d w id th .

Contextual Info: .085 2.15 EH Series Straight Pin .098 2.50 A B .098+/-.002 2.50+/-0.05 TYP .040+/-.002 TYP 1.02+/-0.05 .025 0.64 .098 2.50 Material : Nylon UL 94V-0 Contact : Phosphor bronze Current rating : 1A, AC/DC Voltage rating : 125V, AC/DC Standard color: white .025" 0.64mm straight square pins

Contextual Info: CBC915 EnerChip EP Energy Processor EnerChip™ Energy Processor for Energy Harvesting Applications Features • Use any type of Energy Harvesting EH transducer: Light, Vibration, Thermal, RF, etc. • Advanced Maximum Peak Power Tracking Algorithms for High Efficiency Energy Conversion

p120l

Contextual Info: EH .039 1.00 A B .085 2.15 .150 3.80 * * * * * * * .098 2.50 Series Right Angle Pin Headers Material : Nylon UL 94V-0 Contact : Phosphor bronze Current rating : 1A, AC/DC Voltage rating : 125V, AC/DC Standard color: white .025" 0.64mm right angle square pins

Contextual Info: GaAs MMIC SP2T FET Non-Reflective Switch With Integral Driver EH!A|pÌtB AN002R2-29 Features • Integral Driver +5V, -5V ; CMOS & i n ­ compatible ■ 2 Line Control ■ Low DC Power Consumption ~20mW per arm ■ 6 Lead Flatpack Package ■ Reflective Short

Contextual Info: d 8/92 i - - _ ^O nU EH R 0 -7 V - /3 - 5 / 2225-KMartin Avenue, Santa Clara, CA 95050 408 492-1400 FAX (408) 492-1500 CO M PO NENTS 10 to 1000 MHz TO-8 Cascadable Amplifier AC1037 (Typical Values) High Reverse Isolation .

din 7167 TOLERANCE CHART

Contextual Info: POSITION ^ I H H w a r | | | | | | SEE TAB LE | |oaO A - K BOLDER CHARGED LEAD CODE: 1 = TIN 2 = TIN / LEAD DATE CODE —1 DIM R" .002 .004 ’ UNMATED HEIGHT Eh 19 .006 10 .006 20 .006 30 .006 AO .006 50 .006 15 .006 25 .006 35 .009 A5 .009 PICK AND PLACE CAP

Contextual Info: THIS DRAWI NG IS COPYRIGHT UNPUBLI S HED. - RELEASED BY TYCO ELECTRONICS CO RPORATION. FOR ALL PUBLI CATI ON RIGHTS REV I S I O N S RESERVED. DESCRIPTION EH I 0 - 0 4 7 8 - 0 4 ECR-07-002721 SECTI A A A-A SCALE I : I SMART READER : AND SWITCH CONTACTS A A

tfm-110-02

Abstract: TFM-XX TFM-110-02-XXX-D-DS PT-1-24-05-17 SHT32
Contextual Info: TFM-1XX-XX-XXX-D-XXX NOTES: REVISION EH 1. C REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM PUSHOUT FORCE FOR CONTACTS, WELD TABS AND THREADED INSERTS: 12 OZ. No OF POSITIONS 3. MINIMUM LOCKING CLIP RETENTION: 8 OZS. LEAD STYLE -01, -02, -03: -02 THRU -50 ALL

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION 5 6 7 8 4 3 2 - ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC DIST GP 00 P LTR H 'ED P IN 1 SEE DESCRIPTION REV PER ECO—0 9 —020615 DATE DWN APVD 17SEPT09 RG EH TABLE

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Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. - ,- REM ISIO NS P LTR DESCRIPTION EU REVISED PER E C R -0 8 -0 3 1 605 DATE DWN 17DEC08 APVD HMR EH CONTINUOUS STRIP ON REEL.

hall effect 4 pin out ab

Abstract: A1392 A1391 A1391SEHLT-T "Linear Hall-effect Sensor" 4 pin hall sensor hall effect sensor 4 pin "linear hall effect sensor" 4 pin hall effect AC CURRENT 80 L hall effect sensor
Contextual Info: A1391 and A1392 Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode Package EH, 6-pin MLP/DFN VCC 1 6 VREF OUT 2 5 SLEEP GND 3 4 GND These linear Hall effect sensor integrated circuits ICs provide a voltage output that is

B10B-EH-A

Abstract: C0825 EH 002 Ehr-10 Jst B-5B-EH-A S13B-EH E60389 EHR-11 EHR-12 EHR-13
Contextual Info: Crimp EH CONNECTOR Radial Tape Disconnectable Crimp style connectors 2.5mm .098" pitch Features –––––––––––––––––––––––– • Compact and slim This connector is designed to be compact and unusually thin. It

eht-120-01-s-d-sm

Abstract: EHT-120-01-S-D 26 PIN HEADER SAMTEC samtec lc 1-800-SAMTEC-9 EHT-112-01-S-D
Contextual Info: 2mm EJECTOR HEADER SPECIFICATIONS For com plete specifications see w w w .sam tec.com ?EH T In su lator Material: Black Liquid C rystal Polym er nnw.ni Term inal M aterial: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni C urrent Rating: 3A @ 8 0 °C am bient

Lautsprecher LP

Abstract: serviceanleitung kr 660 service-mitteilungen Lautsprecher L 2911 RFT KR 650 Statron Mitteilungen Lautsprecher RFT L 2911 KR 650 service mitteilung
Contextual Info: SERVICE-MITTEILUNGEN t R U M H IRADIO-television | AUSGABE: 1985 00 VEB INDUSTRIEVERTRIE B RU ND FU NK UND FER NS EH EN Sei ’j 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Einsatz des Tuners FET - 1D der Fa. VIDEO-TON VR Ungarn im Colormat 4306/07_^