EGN21C320I2D Search Results
EGN21C320I2D Datasheets Context Search
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Contextual Info: EGN21C320I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 55.0dBm typ. @ Psat -High Efficiency: 65%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
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EGN21C320I2D 14GHz |