EE-16 6 Search Results

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic

Contextual Info: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Back Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SX3070

Abstract: 3-mm LED SX3070 datasheet in EE-SX4070 SX3070 SX4070 6five
Contextual Info: Opto–Switch EE–SX3070 / EE–SX4070 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.

2510T

Abstract: EE-SX498 opto-switch EE-SX398 photo detector transistor photo transistor application SX498
Contextual Info: Opto–Switch EE–SX398 / EE–SX498 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.

Contextual Info: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic

qml-38535

Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

vsc8061

Contextual Info: Datsheet VSC8061/VSC8062 2.5 Gb/s 16-Bit Multiplexer/ Demultiplexer Chipset Features • Serial Data Rate up to 2.5 Gb/s • 16-bit Wide ECL 100K Compatible Parallel Data Interface • Power Dissipation: VS8061: 2.OW max , YS8062: 1.7W(max) * Standard ECL Power Supplies: V EE = -5.2

Contextual Info: * 16:1 MULTIPLEXER SYNERGY SY10E164 SY100E164 SEMICONDUCTOR FEATURES • ■ 850ps Data Input to Output ■ Extended 100E V ee range of -4.2V to -5.5V ■ Differential output ■ Fully compatible with industry standard 10KH, 100K ECL levels DESCRIPTION The SY10/100E164 are 16:1 m ultiplexers with a

Contextual Info: COM'L a PALCE29M16H-25/35 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable E2 technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic

Contextual Info: * SY10E164 SY100E164 16:1 MULTIPLEXER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 850ps Data Input to Output Extended 100E V ee range of -4.2V to -5.5V Differential output Fully compatible with industry standard 10KH, 100K ECL levels T h e S Y 1 0 / 1 0 0 E 1 6 4 a re 16:1 m u ltip le x e rs w ith a

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424FG641 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FG641 is a 4,194,304 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM : ,uPD4216405 are assembled.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :

Ubicom

Abstract: SX48BD SX52BD SX52BD100
Contextual Info: November 30, 2000 SX48BD/SX52BD/SX52BD75/SX52BD100 Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability, and On-Chip Debug 1.0 1.1 PRODUCT OVERVIEW Introduction On-chip functions include two 16-bit timers with 8-bit

pic 92121

Abstract: pic dmx-512 dmx512 decoder Parallax dmx-512 LA 7576 dmx512 pic PID control rc servo dmx tx PIC dmx example codes
Contextual Info: ADVANCE INFORMATION October 16, 1998 SX18AC100 / SX28AC100 High-Performance 8-Bit Microcontrollers with EE/Flash Program Memory and In-System Programming Capability 1.0 1.1 PRODUCT OVERVIEW 1.2 Introduction Key Features • 100 MIPS performance at 100 MHz and Vcc=5.0V

Contextual Info: A 122 x 16 DOTS 122 x 16 DOTS Note: tolerance is Unit: mm Parameter Logic LCD Logic Current LCD LCD Drive Voltage 25 H Input Voltage L Voltage Symbol 0.3 unless otherwise noted. Standard Values Min. Typ. Max V DD -V SS V DD -V 0 I DD I EE 4.75 4.5 - 5.25

CAT24WC16

Contextual Info: H CAT24WC01/02/04/08/16 1K/2K/4K/8K/16K-Bit Serial EEPROM LE CAT24WC01/02/16 not recommended for new designs. See CAT24FC01, CAT24FC02 and CAT24FC16 data sheets. FEATURES EE GEN FR ALO A D F R E ETM • Self-Timed Write Cycle with Auto-Clear ■ 400 kHz I C Bus Compatible*