EE-16 6 Search Results

CIRCUIT SCHEMATIC CAR ECU

Abstract: ARM7 pin configuration cars ecu automotive ecu manual car engine ecu car ecu
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Back Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic

qml-38535

Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A

EE-SX3070

Abstract: 3-mm LED SX3070 datasheet in EE-SX4070 SX3070 SX4070 6five
Contextual Info: Opto–Switch EE–SX3070 / EE–SX4070 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.

2510T

Abstract: EE-SX498 opto-switch EE-SX398 photo detector transistor photo transistor application SX498
Contextual Info: Opto–Switch EE–SX398 / EE–SX498 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.

Contextual Info: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic

Contextual Info: COM’L a PALCE29MA16H-25 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-perform ance sem icustom logic replacem ent; E lectrically Erasable EE tech nolog y allow s reprogram m ability ■ 16 bid ire ctio n a l user-program m able I/O logic

qml-38535

Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C -4 5 1 6 C D 6 4 7 is a 1 6 ,777 ,2 16 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

fairchild ECL

Abstract: f10106 F10107
Contextual Info: FAIRCHILD ECL • F10K SERIES LOG IC DIAGRAMS V C C 1 = Pin 1 5 , VCC2 - Pin 16(4), V EE - Pin 8(12), ( ) - Flatpak F10100/F10500 F10102/10502 F10101/10501 <8)4 F10103/10503 (8)4 2 (6 ) (9)5 (9)5 <10)6 (11) :3 > - <11)7- (14) (14) (15) : ^ E > - (15) : (16) 1 2 - n V

Contextual Info: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors

vsc8061

Contextual Info: Datsheet VSC8061/VSC8062 2.5 Gb/s 16-Bit Multiplexer/ Demultiplexer Chipset Features • Serial Data Rate up to 2.5 Gb/s • 16-bit Wide ECL 100K Compatible Parallel Data Interface • Power Dissipation: VS8061: 2.OW max , YS8062: 1.7W(max) * Standard ECL Power Supplies: V EE = -5.2

Contextual Info: * 16:1 MULTIPLEXER SYNERGY SY10E164 SY100E164 SEMICONDUCTOR FEATURES • ■ 850ps Data Input to Output ■ Extended 100E V ee range of -4.2V to -5.5V ■ Differential output ■ Fully compatible with industry standard 10KH, 100K ECL levels DESCRIPTION The SY10/100E164 are 16:1 m ultiplexers with a