EE-16 6 Search Results

NTC 20K

Abstract: CIRCUIT SCHEMATIC CAR ECU Analog devices branding codes monoflop
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC

CIRCUIT SCHEMATIC CAR ECU

Abstract: ARM7 pin configuration cars ecu automotive ecu manual car engine ecu car ecu
Contextual Info: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic

Contextual Info: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

Contextual Info: FINAL COM'L: H-25 il PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic need Aicro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

EE-SY410

Abstract: EE-SY310
Contextual Info: Back Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC

Contextual Info: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic

qml-38535

Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A

2510T

Abstract: EE-SX498 opto-switch EE-SX398 photo detector transistor photo transistor application SX498
Contextual Info: Opto–Switch EE–SX398 / EE–SX498 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.

Contextual Info: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic

Contextual Info: FEATURES • Max. propagation delay of 1300ps ■ I EE min. of -6 3 m A ■ Industry standard 100K ECL levels ■ Extended supply voltage option: V ee = -4 .2 V to -5 .5 V ■ Voltage and tem perature com pensation for improved noise immunity ■ 21S 2H The SY100S364 is a 16-input multiplexer designed for

Contextual Info: COM’L PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE tech nolog y allow s reprogram m ability ■ 16 bid ire ctio n a l user-program m able I/O logic

Contextual Info: COM’L a PALCE29MA16H-25 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-perform ance sem icustom logic replacem ent; E lectrically Erasable EE tech nolog y allow s reprogram m ability ■ 16 bid ire ctio n a l user-program m able I/O logic

qml-38535

Contextual Info: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C -4 5 1 6 C D 6 4 7 is a 1 6 ,777 ,2 16 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of