EE 16A TRANSFORMER Search Results

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

IRF540NS

Abstract: IRF540NSPBF AN-994 IRF540N IRF540NL IRL3103L EE 16A transformer MOSFET IRF540n
Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from

IRF540NS

Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFETÆ Power MOSFET l D RDS on = 44m! G Advanced HEXFET Æ Power MOSFETs from

EE 16A transformer

Abstract: IRF540NLPBF IRF540NL IRF540NS IRF540NSPBF AN-994 IRF540N IRL3103L 4.5v to 100v input regulator
Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from

IRLZ34N

Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PROVISIONAL PD - 94594 IRF7832 HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. VDSS RDS on max Qg 30V 4.0mΩ@VGS = 10V 34nC Benefits l Very Low RDS(on) at 4.5V VGS

Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier

IRLZ34N

Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier

IRLZ34N

Contextual Info: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-188-70 IRLZ34N HEXFET TO-220 PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive

IRFZ34N

Abstract: irfz34n equivalent irf 405
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

800S-P060

Abstract: SCP-800-48 SCP-800-09 SCP-800-12 SCP-800-15 SCP-800-60 800S-P012 800S-P018 800s-p048
Contextual Info: SSCCPp- 8- 08 00 0s e rsi ee rsi e s 800W�Parallel Type�With�PFC�Function 8 0 0 W P a r a l l e l Type With PFC Function ���������� ������������������� ����������������

irfz34n equivalent

Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

irfz34n

Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

IRF5305L

Abstract: IRF5305S
Contextual Info: PD - 9.1386B IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRLIZ34N

Abstract: MOSFET IRF 630
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFZ34N

Abstract: IRF 250
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFZ34N IRFZ34NL IRFZ34NS IRFZ34N MOSFET
Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A

AN-994

Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A

AN-994

Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A

AN-994

Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-175-26 IRFZ34NS HEXFET D2Pak PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology

IRL2910

Abstract: IRLI2910 SS2000
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1384 IRLI2910 PRELIMINARY HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm