EDI 10 RECTIFIER Search Results
EDI 10 RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CRG10A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG11B | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG04A | Toshiba Electronic Devices & Storage Corporation | General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT | Datasheet |
EDI 10 RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RUST2008Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified |
OCR Scan |
rust2008rust201025/ia | |
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Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified |
OCR Scan |
rust2008rust201025/iaran4400+2 | |
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Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25°C Unless Otherwise Specified |
OCR Scan |
rust2008rust201025/ta | |
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Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI S ER IES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25°C Unless Otherwise Specified |
OCR Scan |
rust2008rust2010 | |
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Contextual Info: NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV V olts NTD 08 NTD 10 NTD 12 NTD 15 NTD 20 NTD 25 NTD 30 NTD 35 NTD 40 NTD 45 |
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Contextual Info: FAST RECOVERY, 100ns. HIGH VOLTAGE 40ma, MINIATURE RECTIFIERS 1 INCH MINIMUM LEADS SMALL SIZED MOLDED PACKAGE PRV 3,000 TO 12,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type PRV Volts SL300 3 ,0 0 0 SL500 5 ,0 0 0 SL800 8 ,0 0 0 SL1000 10 ,0 0 0 SL1200 |
OCR Scan |
100nssl300sl500sl800+4 | |
TV20Contextual Info: TV H I G H V O L TA G E SILICON RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 6,000 TO 20,000 VOLTS FAST RECOVERY AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI TYPE PRV VOLTS MAXIMUM FORW ARD VOLTAGE DROP @5mA TV 6 6,000 20 TV 8 8,000 25 TV 10 10,000 30 TV 12 12,000 |
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100nsecand100tv20 | |
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Contextual Info: HIGH VOLTAGE - HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. NTD08 NTD 10 NTD 12 NTD 15 NTD 20 NTD 25 NTD 30 NTD 35 NTD 40 NTD 45 NTD 50 NTD 60 Peak Reverse Voltage P R V V o lts |
OCR Scan |
ntd08 | |
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Contextual Info: 500 mA SILICON RECTIFIERS HIGH VOLTAGE DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 25,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak Reverse Voltage PRV Volts EDI Typ« No. KVF KVF KVF KVF KVF KVF KVF KVF 5 7.5 10 12.5 15 20 25 30 Max. Fwd. Voltage Drop at 25° and 500 mA |
OCR Scan |
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Contextual Info: HIGH VOLTAGE CYLINDER SILICON RECTIFIERS • DIFFUSED SILICON JUNCTIONS • PRV 150,000 TO 200,000 VOLTS • A V A LA N C H E CHARACTERISTICS • LOW LEAKAG E • INTER NAL CAPACITOR COMPENSATION EDI TYPE NO. 100 C Y L 150 PRV VOLTS Average Rectified Foward Current |
OCR Scan |
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100CYL150
Abstract: 100CYL175 100CYL200 200CYL150 200CYL175 200CYL200
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100cyl150100ma100cyl175100cyl200+4 | |
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Contextual Info: CYL HIGH VOLTAGE CYLINDER SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 150,000 TO 200,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE INTERNAL CAPACITOR COMPENSATION AVERAGE RECTIFIED FORWARD CURRENT @50 o C MAX FORWARD VOLTAGE DROP @25 o C RA TED CURRENT |
Original |
100cyl150100ma100cyl175100cyl200+3 | |
edi minibridge pb20
Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
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OCR Scan |
edi minibridge pb20rectifier edi minibridgeedi minibridge pbedi pb20+3 | |
100DC
Abstract: at 3rw3 1 3RW22
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OCR Scan |
100dcat 3rw3 13rw22 | |
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Contextual Info: 175°C Operation High Voltage Rectifier Assemblies • Exceptional high temperature stability to 175°C •T o 200 °C operation available. Consult factory • Exceptionally low leakage • Small size • 5, 15, and 30 KV PRV Our proprietary diffusion and passivation'process provides this unusual stability and no leakage drift at these |
OCR Scan |
htd15 | |
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Contextual Info: 175°C Operation High Voltage Rectifier Assemblies • Exceptional high temperature stability to 175°C • To 200 °C operation available. Consult factory • Exceptionally low leakage • Small size • 5, 15, and 30 KV PRV Our proprietary diffusion and passivation'process provides this unusual stability and no leakage drift at these |
OCR Scan |
j0j25r | |
edi rectifier rush 103Contextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES ✓ PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics P RV 3000 4000 5000 EDI type R U S H 103 R U S H 104 R U S H 105 ELECTRICAL CHARACTERISTICS at TA = 25°C , Unless Otherwise Specified |
OCR Scan |
200maedi rectifier rush 103 | |
3KC35100
Abstract: 3KC35
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OCR Scan |
3kc3504kc353kc351003kc35 | |
RWB005
Abstract: RWB010 RWB020 RWB040 RWB060 RWB080 RWB100
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OCR Scan |
rwb005rwb010rwb020rwb040+3 | |
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Contextual Info: HIGH VOLTAGE 50 mA SILICON RECTIFIERS • SMALL SIZE MOLDED PACKAGE • PRV 10,000 TO 15,000 VOLTS • FAST RECOVERY R _ SERIES • AVALANCHE CHARACTERISTICS • LOW LEAKAGE EDI Type PRV Volts REVERSE RECOVERY TIME (Fig. 4) VT1000 10,000 - VT1200 12,000 |
OCR Scan |
vt1000vt1200vt1500rvt1000+2 | |
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Contextual Info: HIGH VOLTAGE RECTIFIERS ULTRA-MINIATURE AND MINIATURE • • • • SMALL SIZE EPOXY PACKAGES FAST AND STANDARD RECOVERY TIMES PRV TO 10,000 VOLTS VERY LOW REVERSE LEAKAGE EDI Type No. Peak Reverse Voltage PRV Volts Avg. Forward Current l0 (mA) °100°C |
OCR Scan |
hv15pdhv20pdhv25pdhv30pd+6 | |
RUSH
Abstract: RUSH103 RUSH104 RUSH105
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Original |
rush103rush104rush105and100+4 | |
KVF 20Contextual Info: KVF 500 mA SILICON RECTIFIERS HIGH VOLTAGE DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 30,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. Peak Reverse Voltage PRV Volts Max. Fwd. Voltage Drop at 25 C and 500 mA VF (Volts) Length L O FIG. 3 Inches |
Original |
kvf 20 | |
eDI 10 rectifierContextual Info: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA = 25 °C, Unless Otherwise Specified |
OCR Scan |
rush103rush104rush105200ma+1 | |