EDAC 90 PIN Search Results

Contextual Info: EDAC Series T T 9 6 EDAC Series Features and Benefits _ • Attractive, corrosion-resistant, nickel-plated jacks • Steel frame jacks for superior jack life • Extra wide labeling strips provide maximum space and two vertical strips, one at each side

SRAM edac

Abstract: edac 90 pin MD-1220 MD916 49S32DRP MC458 CD1117 MC559 MD2136
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 8/16/32 BIT SRAM EDAC SPACE PRODUCTS 49S32DRP FUNCTIONAL BLOCK DIAGRAM EDAC 3:0 EDAC-CORE D(7:0) MD(31:0) CD(31:0) ND(7:0) CB(7:0) ERR DBERR Checkbit Generator 172 LDPQ RAD-PAK MC(31:0) CB(7:0) D(7:0) CS/RD/WR ERR I/OA(3:0)

edac 90 pin

Abstract: 56 pin edac connector edac 96 pin edac connector Elco 90 pin connector ELCO E38 56 PIN ELCO Connector 56 pin edac edac 90 ELCO 56 96 pin edac connector
Contextual Info: NPB 555 EZ Norm Series The EZ Norm offers a simplified method for setting up and changing normals to a Bantam / TT patchbay. Simply remove the middle designation strip, and rotate the center cam, using a standard screwdriver. An audible “click” can be heard as you rotate from full normals to no

SRAM edac

Abstract: edac 90 pin edac 56 pin MC3115 48D32DRP dRAM edac mc2113 56 pin edac CD310 edac 90
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 8/16/32 BIT DRAM EDAC SPACE PRODUCTS 48D32DRP EDAC ENB EDAC-CORE D 31:0 MD(31:0) ND(31:0) CD(31:0) ENB CB(7:0) ERR DBERR Checkbit Generator MC(7:0) ENB CB(7:0) D(31:0) 172 LDQP RAD-PAK CS/RD/WR SBE CLK I/O RD EDAC CONTROL

74F632

Abstract: 74F632QC C1995 DB31 DP8406 DP8406QV V52A F632 Diode cbn 9579
Contextual Info: DP8406 54F 74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The DP8406 device is a 32-bit parallel error detection and correction circuit (EDAC) in a 52-pin or 68-pin package The EDAC uses a modified Hamming code to generate a 7-bit

edac 96 pin edac connector

Abstract: 516-090-000-301 SGM SERIES CONNECTOR edac 90 pin
Contextual Info: „ „ I JACK PANELS 1/111 1196 EDAC SERIES 7 73 792-2700 TT96 EDAC SERIES m TT96EDACNS The TT96EDAC Series offers the convenience of EDAC connectors on the back of the panel for easy installation. Available in normals strapped and normals brought out, both wired to the SAC code of wiring. We also

edac 90 pin

Abstract: 300C AT25
Contextual Info: .158 4.00 .079(2.00) U - .437(11.10) — J (5) 1 L -.047(1.21) - ISSUE NUMBER THIS IS A C.A.D. GENERATED DRAWING DO NOT MAKE MANUAL REVISIONS TO MASTER. ORIGINAL - I SPECIFICATION: 276(7.00) .394(10.00) CONTACT CURRENT RATING: 1.8 A PER PIN MIN. AT25°C (STILL AIR)

300C

Abstract: AT25 edac 90 pin edac
Contextual Info: .158 4.00 .079(2.00) U - .437(11.10) — J (5) 1 1- - -.047(1.21) ISSUE NUMBER THIS IS A C.A.D. GENERATED DRAWING DO NOT MAKE MANUAL REVISIONS TO MASTER. ORIGINAL SPECIFICATION: CONTACT CURRENT RATING: 1.8 A PER PIN MIN. AT25°C (STILL AIR) INSULATION RESISTANCE: 100 MEGOHMS MIN. AT DC FOR 1 MINUTE

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

zo 107

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER2M32

Abstract: UT8ER4M32 UT8ER1M32 SRAM edac
Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 2, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

UT8ER4M32

Abstract: SRAM edac UT8ER4M32M 20820h ut8er1m32m EN 10204 3.1 aeroflex sram edac UT8ER2M32
Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 9, 2010 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

SRAM edac

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

aeroflex sram edac

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 16, 2009 FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

edac 316 90 pin

Abstract: 300C AT25 edac 96 pin edac connector 75202
Contextual Info: U - .437 11.10 — I .158(4.0±0.05) .079(2.0±0.05) 1 — ISSUE NUMBER THIS IS A C.A.D. GENERATED DRAWING DO NOT MAKE MANUAL REVISIONS TO MASTER. (5) D U — .047(1.21+0.05/0) REMOVE P/N: 690-009-221-013 R.STA.MONICA MAY.07/10 Q ADD P/N: 690-009-521 T013 AND

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 7, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

UT8ER2M32

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 8, 2009 FEATURES ‰ 20ns Read, 10ns Write maximum access times available ‰ Functionally compatible with traditional 1M, 2M and 4M

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state

UT8ER512K32

Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

UT8ER512K32

Abstract: UT8ER512K SRAM edac RAM EDAC SEU OP167
Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state

UT8ER512K32

Contextual Info: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES  20ns Read, 10ns Write maximum access times  Functionally compatible with traditional 512K x 32 SRAM devices  CMOS compatible input and output levels, three-state