ED MARKING CODE DIODE Search Results

Contextual Info: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

DTZ6.8B

Abstract: DTZ33B PTZ27A dt2 marking code RLZJ6.8B RLS135 DTZ30C DTZ9.1 zener dtz33B
Contextual Info: Part Marking Mold type § Diodes 185 Part Marking @ Z e n e r Diodes (PTZ Series Mold type Q Z e n e r Diodes (DTZ Series) Part No. CD Part No. 0 0 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 8 9 9 9 A A A C C C E E E F F F H H H J J J L L L 1 2 1 2 1 2 1 2 1 2 1 2

ED marking code diode

Abstract: D95E
Contextual Info: Central“ CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: SURFACE MOUNT SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an

DIODE marking ED

Abstract: ED marking code diode ED MARKING CODE
Contextual Info: ; -¡X •A> Central CMPD7006 CMPD7006A CMPD7006C CMPD7006S Semiconductor Corp. DESCRIPTION: SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode

TRANSISTOR BC 208

Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Contextual Info: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode

Contextual Info: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)

marking cj4

Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Contextual Info: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS

ED 69 SOD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR ZENER DIODES MMSZ4685 - MMSZ4717 SOD-123 PLASTIC PCAKAGE ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Power Dissipation at TL=75ºC Junction Temperature

Contextual Info: AOZ8001J Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001J is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● – IEC 61000-4-2, level 4 ESD immunity test – ±15kV (air discharge) and ±8kV (contact discharge)

oz800

Abstract: SOT-143 MARKING 550 AOZ8001JI sot143 TOP marking AOZ8001A SOT143-4L
Contextual Info: AOZ8001J Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001J is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● – IEC 61000-4-2, level 4 ESD immunity test e d en mm

marking code diode R1

Contextual Info: Central" CMWSH-4 semiconductor Corp. SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat­ ed SUPERmini™Silicon Schottky diodes. The CMWSH-4 has been designed for use in high

Contextual Info: Central CMWSH-4 TM Semicondui SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat­ ed SUPERmini™ Silicon Schottky diodes. The CMWSH-4 has been designed for use in high

Marking v5j

Abstract: tvrs8
Contextual Info: TO SH IBA TVR5B,TVR5G,TVR5J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR5B, TVR5G, TVR5J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) = 0-5 A Repetitive Peak Reverse Voltage : V r r m = 100—600 V Reverse Recovery Time

zener diode zd16

Abstract: ZD24 ZD15 ZD18 zd33 ZD8.2 ZD12 zd27 ZD10 ZD11
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD2.4 THRU ZD36 ZENER DIODE ZD2.4 THRU ZD36 ZENER DIODES 3 FEATURES 2 *Compact, 2-pin SOD-323 and 3-pin(SOT-23) mini-mold types for high-density mounting. 1 SOT-23 *High demand voltage range (2.4V~36V) is manufactured on high-efficient non-wire bonding production line.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES „ FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.

fast recovery diode 600v 5A

Abstract: Diode 400V 5A SC311 SC311-4 SC311-6 diode 400v 0.5a
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

2sc2112

Abstract: SC211 SC211-2 SC211-4 DIODE marking ED ed marking code transient 400v high speed diode 08A marking
Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GF Applications

ED marking code diode

Abstract: SC321-2 SC321 marking HB
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

ED marking code diode

Contextual Info: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

ZD4.7

Abstract: AE SOT23 0.9v ZD12 ZD33 ZD6.2 ZD8.2 ZD15 diode zd33 ZD24 zener diode zd16
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES 3 FEATURES 2 1 SOT-23 *Compact, 2-pin SOD-323 and 3-pin(SOT-23) mini-mold types for high-density mounting. 2 *High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

Contextual Info: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case