ED 3B DIOD Search Results

MIL-STD-1276

Abstract: VS-100 kovar 107D 204C 213B VS100
Contextual Info: VS-100 High Speed Wideband RF Switch 2-500 MHz SP2T L4RIL T h e V S -100 is a m in ia tu re high perform ance RF S ch o ttky diode sv/itch w ith inte rna l d rivers and internal 50 o h m term in atio ns. T his sw itch e xh ib its high spe ed sw itching, lo w sw itch ing

MIL-STD-1276

Abstract: 107D 204C 213B diode 107d
Contextual Info: VS-21 High Isolation RF Switch 5-500 MHz SP2T MUL G UARANTEED MINIMUM PERFORM ANCE DATA O ve rall F req u en cy Range: 5 -5 0 0 M Hz 5 -1 0 0 0.7 65 1.25 VS-21 is a m in ia tu re high perfo rm an ce R F h yb rid PIN diode sw itch w ith in te rn a l C M O S d rive r

Contextual Info: ULQ2003A DARLINGTON TRANSISTOR ARRAY SLIS072 - DECEMBER 1996 • 500-mA Rated Collector Current Single Output D OR N PACKAGE (TOP VIEW) • High-Voltage Outputs . . . 50 V • Output Clamp Diodes • Inputs Compatible With Various Types of Logic Interchangeable With ULN2001A Series

kd 617

Contextual Info: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type

JAN1N486B

Contextual Info: Microsemi Corp. yfm f* in e a iode expert?. SANTA ANA, CA F o r m o re in fo rm a tio n call: 7 1 4 979-K220 FE A TU R E S 1 N 4 8 3 B thru 1 N 4 8 6 B and 1 N 5 19 4 thru 1 N 5 19 6 GENERAL PURPOSE SILICON DIODES • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (00-35).

BYT03-400

Contextual Info: BYT03-400 _ FAST RECOVERY RECTIFIER DIODE MAJOR PRODUCTS CHARACTERISTICS I f a v 3 A V rrm 400 V trr 25 ns V f (max) 1 .4 V FEATURES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING DESCRIPTION

c 50275

Abstract: QUADRUPLE TRANSCEIVERS AM26S10 AM26S10C AM26S11 AM26S11C
Contextual Info: AM26S10C, AM26S11C QUADRUPLE BUS TRANSCEIVERS SLLS116A- D2298, JANUARY 1977-R EV IS ED JANUARY 1993 * Schottky Circuitry for High Speed, Typical Propagation Delay Time. . . 12 ns * Drivers Feature Open-Collector Outputs for Party-Line Data Bus Operation

0PA37

Abstract: OPA27CZ
Contextual Info: For Im eéiate Assistance, Contact our Local Salesperson OPA27 OPA37 AVAILABLE IN DIE Ultra-Low Noise Precision OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS • LOW NOISE: 3.8nV/\'Hz max at 1kHz • PRECISION INSTRUMENTATION • LOW OFFSET: 25|iV max • DATA ACQUISITION

BYU98

Contextual Info: DEC 1 3 1990 H Z J S G S -T H O M S O N ^ 7 # , l i a i O E ^ @ g l L i g ,u ’[ ^ @ [ ì a D ( g g _ L 4 9 6 3 1,5A SWITCHING REGULATOR • 1.5A OUTPUT LOAD CURRENT ■ 5.1 TO 36V OUTPUT VOLTAGE RANGE ■ DISCONTINUOUS

74F253

Abstract: IDTQS33X2253 IDTQS33X253 QS33X2253
Contextual Info: IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH™ 24:6 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

Contextual Info: IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH™ 24:6 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc

ISOWATT220AC

Abstract: STPR1520D STPR1520F
Contextual Info: STPR1520D/F ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 15 A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY

Contextual Info: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant K EY FEAT U RES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device

DIODE SOD-323 k1

Abstract: D31 SMD MARKING MARKING 05W SOD-323 BAS70-04W
Contextual Info:  BAS70J / BAS70W BAS70-04W /BAS70-05W / BAS70-06W SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS n n n n K2 NC VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K K A K1 A A K1 BAS70W BAS70-06W A2

BYW100-200

Contextual Info: BYW100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1.5 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times

BYT230PIV-1000

Abstract: BYT231PIV-1000 BYT230PIV1000
Contextual Info: BYT230PIV-1000 BYT231PIV-1000 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 1000 V VF (max) 1.8 V trr (max) 80 ns K2 A2 K1 A1 BYT231PIV-1000 A2 K1 K2 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME

MAX247

Abstract: STPS80L15CY
Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

40H00

Abstract: ML40126 ML40126N ML44126N ML44126R ML4XX26 780nm 5v 3mW laser diode
Contextual Info: MITSUBISHI LASER DIODES ML4XX26 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4XX26 s erise s ta b le , s in g le a re A IG a A s tr a n s v e r s e w a v e le n g th of 7 8 0 n m la s e r m ode diodes w hich o s c illa tio n provides w ith

Contextual Info: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1

S8210

Contextual Info: TOSHIBA TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-M O SIII TPCS8210 Lithium Ion Battery Applications Has a small footprint. Low drain-source ON resistance: RDS (ON) = 19 m£2 (typ.) High forward transfer admittance: | Yfs I = 9.2 S (typ.)

ic ka3842b

Abstract: PWM IC 8 PIN DIP KA3842 KA3842B ic ka3842b with pin KA3842 ka3842 application notes Diode RL 4B KA3843B KA3844 KA3844B
Contextual Info: SAMSUNG ELECTRONICS INC b7E » KA3842B/3B/4B/5B • 7ti b M m 2 0017400 247 ■ SIIGK LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal.external

ka3642

Abstract: KA3642B
Contextual Info: KA3842B/3B/4B/5B LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS a dip The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal external com ponents. These integrated circuits feature a trimmed

Contextual Info: B Y T 2 3 0 P IV - 1 0 0 0 B Y T 2 3 1 P IV - 1 0 0 0 FAST R ECO VER Y R ECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 1000 V V f (max) 1.8 V trr (max) 80 ns ESS ˌ K2 A2 K1 A1 A2 K1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 FEATURES AND BENEFITS

BYT200PIV400

Abstract: BYT200PIV-400
Contextual Info: BYT200PIV-400  ULTRAFAST POWER RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2 x100 A VRRM 400 V VF (max) 1.4 V FEATURES AND BENEFITS n n n n A1 K1 A2 K2 1= 2= 3= 4= 2 4 LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE :