ECM CIRCUIT Search Results

ECM-BF561

Contextual Info: eCM-BF561 Blackfin Core Module Core Module eCM-BF561 The Core Module eCM-BF561 is optimized for performance and parallel data processing. The module integrates processor, RAM, flash and power supply at a size of 44x33mm! It is based on the high performance ADSP-BF561 from Analog Devices.

JBTC94B12-AS

Abstract: S-XFBGA6-0102-0 064mg
Contextual Info: JBTC94B12-AS TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic JBTC94B12-AS Microphone Amplifier + 4th Delta-sigma ADC for Digital ECM The JBTC94B12-AS is developed for ECM Electret Condenser Microphone IC. It is built in a microphone amplifier and a 4th Delta-sigma ADC.

2SK660

Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance

2SK660

Abstract: 2SK66
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance

processor pentium

Abstract: arium pentium TRC-54
Contextual Info: AMERICAN ARIUM EMULATORS COMET - Pentium R Processor In-Circuit Emulators The ECM-54, a portable, low-cost solution which provides processor control through the Intel-defined JTAG debug port. If trace and hardware bus breakpoints are required in the future, the ECM-54 can be upgraded to

diode marking j35

Abstract: 2SK1109 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package

D1594

Abstract: 2SK3230 SC-89
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES

D1629

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES

transistor NEC 2SK2552B

Abstract: 2SK2552B SC-75 D17282
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.

dupont mylar

Abstract: ECM-11 mylar capacitor electrolytic capacitor 22/25 ECM-10 ECM-12 ECM-13 PA111 capacitor 106 35 electrolytic capacitor
Contextual Info: capacitor mounts ECM: Electrolytic Capacitor Mounts ECI: Electrolytic Capacitor Insulators ECM: Electrolytic Capacitor Mounts Color: Natural • Works with 5mm through 35mm industry standard electrolytic capacitors • Insulates and protects leads • Prevents shorting under shock and vibration

2SK3653B

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.

2SK3230B

Abstract: SC-89
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.

transistor NEC 2SK2552

Abstract: 2sk2552 j7 D1594 2SK2552 SC-75
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES

AN6425K

Abstract: piezoelectric receiver
Contextual Info: AN6425K Speech Network Circuit • Overview • Speech network IC for the multifunctional telephone sets • Capable of interfacing with the light-weight small receivers and ECM transmitters • Built-in 2V REG constant voltage source 2V typ for ECM • Built-in non-linear circuits in the transmitter and receiver

20-THD

Abstract: 2SK3857MFV
Contextual Info: 2SK3857MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: 2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

2SK3717

Abstract: SC-72 d1678
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3717 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm FEATURES 1 • Compact package 2.0 ±0.2 3.0 ±0.2 4.0 ±0.2 The 2SK3717 is suitable for converter of ECM.

ECM microphone

Abstract: block diagram OF CONDENSER MICROPHONE wm8903 MICROPHONE EH11 electret condenser mic 3 pin electret microphone insert
Contextual Info: w WAN_0213 WM8903 ECM Microphone Detection using MICBIAS Current INTRODUCTION The WM8903 is a high performance ultra-low power stereo CODEC optimised for portable audio applications. Its inputs are able to interface to an Electret Condenser Microphone ECM for voice

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

TTK101

Abstract: TTK101TK
Contextual Info: TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 0.22±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation PD 100 mW Junction Temperature Tj 125 °C Tstg −55 to 125 °C

2SK3582MFV

Contextual Info: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range