EB MARKING CODE Search Results

UHF transistor GHz

Abstract: BFG93AW DD44 pa 4010
Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold m etallization ensures excellent reliability. BFG93AW/X

transistor marking MTs ghz

Abstract: transistor marking P8 UHF transistor GHz Xr 1075 BFG92AW D032 y1010
Contextual Info: Product specification Philips Semiconductors B FG 92A W B FG 92A W /X; B F G 92A W /X R NPN 6 G H z w id eb an d tra n s isto r MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW • Gold metallization ensures excellent reliability.

Contextual Info: Toggles Series EB TYPICAL SWITCH Pushbuttons Rockers EB20 11 B J23 C Contacts, Ratings, & Terminals Poles & Circuits 11 SPDT ON ON 65 SPDT ON ON 61 DPDT ON (ON) 85 DPDT ON ON ( ) = Momentary No Code Silver Contacts; Solder Lug Terminals 3A @ 125V AC Cap Colors

FES2J

Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Contextual Info: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Bi 3101 A

Abstract: transistor ITT 108 MMBT3904
Contextual Info: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g

2PG002

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

Contextual Info: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474

2pg001

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

2pg003

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 

transistor d2118

Abstract: D2118 D2118 transistor
Contextual Info: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for

sealing cap

Abstract: CC 0201 K R kemet 7867
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

transistor Bf 966

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W

mw 772

Abstract: 12L marking
Contextual Info: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration RAs Q62702-F1222 1 =C 2= E Package 3=B II Marking BF 772 LU Type SOT-143

Contextual Info: ゐ 同 一- T H I R DA N G L EP R O J E C T I O NI CAPACITANCE 1 D IMENS IONS ITEM CODE ※ ※ ※ ヰ I;>i( L I;>i( T I ; > i ( H F 1/，'/~ ECQV 1103JM310.01 (103)17.513.217.0 l1123JM310.012 (123)1 1 1 1153JM3 10.015 (153) 1 1 1183JM3 1O . 018 ( 183) 1

Contextual Info: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

702 Z TRANSISTOR

Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
Contextual Info: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

EB smd code marking tantalum capacitor

Abstract: capacitor SMD 476 35v SMD ka3 SMD 1206 ka3 IEC-286-6 BME MLCC KA3 smd code
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: THIRD ANGLE PROJECTION I … A LTERATION 1 S S U E I ムI G IRATED lVOLTAGE ECQE61020 FZ 630VDC I161220FZI 1 / J"61520FZI 1 / 1 61820FZI 1 / H62220FZI 1 1 H62720FZI 1 1 1163320FZI 1 1 H63920FZI 1 1 M64720FZI 1 / f165620FZI 1 1 H66820FZI 1 / H68220FZI 1 1 ITEM CODE

transistors BC 457

Abstract: BC 458 BC 459 transistors BC 458 transistors BC 458 pnp ic 807 marking 5cs bc 457 5Bs sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfiguration

Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

IMBT4403

Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222