EA TRANSISTOR TRANSISTOR Search Results

max6032

Abstract: BCW65B BCW65C BCW65A
Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89

BCW65A

Abstract: BCW65B BCW65C transistor 556 smd
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA

marking 65B

Abstract: BCW65B BCW65A BCW65C
Contextual Info: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _

marking 65B

Abstract: BCW65A BCW65B BCW65C SMD TRANSISTOR MARKING bw
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BCW65A

Abstract: BCW65B BCW65C
Contextual Info: CDIIL BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor M arking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 .02 _

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 2.6 Pin configuration 1.4 1.2 2.4 R0.1 ÔômT 1 = BASE 2 = EMITTER

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se

Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAG E O U TLIN E DETAILS ALL D IM EN SIO N S IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

12-CE 519

Abstract: 2569s
Contextual Info: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state

Contextual Info: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.

2sa198

Abstract: 2SC5344S 2SA1981S
Contextual Info: 2SA1981S Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S Ordering Information Type NO. Marking 2SA1981S Package Code SOT-23 EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: Transistor 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

2SA1981SF

Abstract: 2SC5344SF
Contextual Info: 2SA1981SF Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344SF Ordering Information Type NO. Marking 2SA1981SF Package Code SOT-23F EA : hFE rank Outline Dimensions

STA1298

Abstract: STC3265
Contextual Info: STA1298 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with STC3265 Ordering Information Type NO. Marking STA1298 Package Code SOT-23 EA : hFE rank Outline Dimensions

Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm φ0.8 1.5±0.2 (1.05) 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

Contextual Info: R5 5 4 0 K SERI ES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state

transistor IRG4BC10UD

Abstract: IRG4BC10UD
Contextual Info: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

EA SOT-23

Abstract: 2SA1981S 2SC5344S
Contextual Info: 2SA1981S PNP Silicon Transistor Description PIN Connection • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344S C B E Ordering Information Type No. 2SA1981S SOT-23 Marking Package Code EA □ □ ① ②

dionics

Abstract: MO chip Transistor Monolithic Transistor Pair NPN Monolithic Transistor Pair
Contextual Info: Detailed S pecifications on Reverás Sido, Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 •4880 Dl 4045-1 □IONICS INC. ea flufiHMOlif St. wf fiifiuar. n.y. 11360 3iB-i9TT74f< NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100*. PROBED

Contextual Info: Composite Transistors UN604 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm φ0.8 1.5±0.2 (1.05) 5 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for

2SA1080

Contextual Info: cP January 1990 Edition 1.1 • FUJITSU P R O D U C T P R O F IL E - 2SA1080 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 8 0 is a silicon P NP M .C .-H ea d a m p lifie r use transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor {R E T } technology. R E T devices are

MARK CODE TL SOT236

Abstract: C9013
Contextual Info: VOLTAGE REGULATOR NO. EA-022-0204 Rx5RL SERIES OUTLINE The Rx5RL Series are CMOS-based voltage regulator ICs with high accuracy output voltage and ultra-low quiescent current. Each of these ICs consists of a voltage reference unit, an error amplifier, a driver transistor,

C9013

Abstract: RE5R
Contextual Info: Rx5RE SERIES VOLTAGE REGULATOR NO. EA-016-110408 OUTLINE The Rx5RE Series are CMOS-based voltage regulator ICs with high output voltage accuracy and ultra-low quiescent current. Each of these ICs consists of a voltage reference unit, an error amplifier, a driver transistor,

Contextual Info: Rx5RE SERIES VOLTAGE REGULATOR NO. EA-016-111020 OUTLINE The Rx5RE Series are CMOS-based voltage regulator ICs with high output voltage accuracy and ultra-low quiescent current. Each of these ICs consists of a voltage reference unit, an error amplifier, a driver transistor,