E78996 FULL BRIDGE T Search Results

E78996 full bridge

Abstract: 25MT060WFAPBF E78996 datasheet full bridge IGBT full bridge 10a600
Contextual Info: 25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor

Contextual Info: 25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor

swiching full bridge

Abstract: 20MT120UFAPBF 20MT120UFa IGBT20
Contextual Info: 20MT120UFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

full bridge driver 600v

Abstract: 20MT120UFP ultrafast igbt S610A
Contextual Info: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

E78996 rectifier module

Contextual Info: 20MT060KF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • FRED Pt hyperfast rectifier

Contextual Info: Bulletin 12776 rev. D 09/97 International I0 R Rectifier P400 SERIES PASSIVATED ASSEM BLED CIRCUIT ELEMENTS Features • Glass passivated junctions for greater reliability ■ Electrically Isolated base plate 40A ■ Available up to 1200 V RHM, VDRM ■ High dynamic characteristics

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

p402 rectifier

Contextual Info: Bulletin 12776 rev. D 09/97 International P400 SERIES XOR Rectifier PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features • G lass passivated ju n ctio n s to r greater re lia b ility ■ E le ctrica lly isolated base plate 40A ■ A va ila b le up to 1 2 0 0 V RRM, VDRM

E78996 scr

Abstract: p402w
Contextual Info: • International Ek>r]Rectifier 4Ô5S4SE GDlbS3T 'ÎÔT ■ INR INTERNATIONAL RECTIFIER bSE » SERIES P400 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features ■ Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RRM, V DRM

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

IR E78996 p135

Abstract: E78996 G1 G2 IR E78996 p125 E78996 full bridge p135 E78996 p102w IR P124 IR E78996 ir e78996 p132 E78996 datasheet bridge P102W E78996
Contextual Info: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations

LT 637

Abstract: E78996 P101 IR E78996 p125 P104 E78996 132P103 E78996 P104 E78996 P102
Contextual Info: Bulletin 127125 09/97 International IQ R Rectifier P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features • G lass passivated ju n ctio n s to r greater relia bility ■ E le ctrica lly isolated base plate 25A ■ A va ila b le up to 1200 V RRM, V DRM

P400 Series

Abstract: D-19 P400 P401 P402 P421 P422 P431 P432
Contextual Info: P400 Series Vishay High Power Products Passivated Assembled Circuit Elements, 40 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics • Wide choice of circuit configurations

E78996 P125

Abstract: P102W E78996 E78996 datasheet bridge E78996 datasheet full bridge p135 E78996 datasheet full bridge p125 E78996 p135 E78996 scr D-19 P100 P101
Contextual Info: P100 Series Vishay High Power Products Passivated Assembled Circuit Elements, 25 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics • Wide choice of circuit configurations

p400 diode

Contextual Info: Bulletin I2776 rev. E 04/99 P400 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 40A Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations

Contextual Info: Bulletin I27125 rev. A 04/99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability 25A Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations

E78996 scr

Abstract: VSP431
Contextual Info: VS-P400 Series www.vishay.com Vishay Semiconductors Power Modules, Passivated Assembled Circuit Elements, 40 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics

Contextual Info: VS-P100 Series www.vishay.com Vishay Semiconductors Power Modules, Passivated Assembled Circuit Elements, 25 A FEATURES • Glass passivated junctions for greater reliability • Electrically isolated base plate • Available up to 1200 VRRM/VDRM • High dynamic characteristics

E78996 full bridge

Contextual Info: 19MT050XFAPbF Vishay Semiconductors "Full Bridge" FREDFET MTP Power MOSFET , 31 A FEATURES • Low on-resistance • High performance recovery diodes optimized built-in fast • Fully characterized capacitance and avalanche voltage and current • Al2O3 DBC

Contextual Info: Bulletin I27212 03/06 IRK.91.PbF SERIES ADD-A-pakTM GEN V Power Modules STANDARD DIODES Features Benefits High Voltage Industrial Standard Package Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage TOTALLY LEAD-FREE Up to 1600V Full compatible TO-240AA

IRK E78996

Abstract: IRK E78996 701819-303ac IRK 160 IRK 91 IRK E78996 p432 I27900 E78996 91 series TO-240AA
Contextual Info: Bulletin I27141 rev. F 10/02 IRK.91 SERIES ADD-A-pakTM GEN V Power Modules STANDARD DIODES Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage