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    E5 MMIC Search Results

    E5 MMIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IWR6243ABGABLR
    Texas Instruments 57-GHz to 64-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments
    AWR1243FBIGABLRQ1
    Texas Instruments 76-GHz to 81-GHz high-performance automotive MMIC 161-FC/CSP -40 to 125 Visit Texas Instruments
    AWR1243FBIGABLQ1
    Texas Instruments 76-GHz to 81-GHz high-performance automotive MMIC 161-FC/CSP -40 to 125 Visit Texas Instruments Buy
    IWR2243APBGABLR
    Texas Instruments 76-GHz to 81-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments
    IWR2243APBGABL
    Texas Instruments 76-GHz to 81-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments

    E5 MMIC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "digital phase shifter"

    Abstract: 160 e7 mmic e3 mmic s5 MAPCGM0004-DIE P180 macom phase shifter
    Contextual Info: RO-P-DS-3051 - - MAPCGM0004-DIE 5-Bit Digital Phase Shifter 6.0-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 6.0-18.0 GHz GaAs MMIC Phase 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs Self-Aligned MSAG MESFET Process


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    ro-p-ds-3051mapcgm0004-diedigital phase shifter160 e7+5mmic e3mmic s5p180macomphase shifter PDF

    Contextual Info: FEATURES • DC - 6 GHz Frequency Range ^ 3 ■ 5 nSec Switching Speed CC MODEL NO. P35-4246-0 ■ Low Insertion Loss GaAs MMIC Transfer Switch ■ Ultra Low DC Power Consumption ■ Plastic Package Available - P/N P35-4246-3 1 2 BOND PAD CONFIGURATION 81


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    p35-4246-0p35-4246-3 PDF

    MMIC code D

    Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
    Contextual Info: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability


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    j10006mil-std-883mil-std-105mmic code d+410 ghz pin diode60 ghz pin diode gaase5 mmiciso/8879-1986/gp131 diode PDF

    Contextual Info: That HEW LETT WHkM PA CK A R D Digital Radio Receiver Down Converter Modules for 37 to 40 GHz Technical Data DRR1-38XX Features Description • Low Noise PHEMT MMIC Front End Amplifier • Image Reject Mixer • Integrated Silicon Bipolar VCO Local Oscillator


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    drr1-38xxwr-28 PDF

    A13F

    Contextual Info: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.


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    njg1550f820mhz-10dbm-30dbm+3820mhzs-10dbnrua13f PDF

    Catalog JRC

    Abstract: GRM39 HK1608 NJG1550F 34B DBM MARK
    Contextual Info: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.


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    njg1550f820mhz-30dbm820mhzs+5-10dbmcatalog jrcgrm39hk160834b dbm mark PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291 PDF

    Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013-00273 Wafer Process: PHEMT-G


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    hmc599hmc650hmc651hmc652+6hmc653hmc654hmc655hmc656hmc657hmc658 PDF

    Contextual Info: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 2 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output IP3 of


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    bga7204 PDF

    Contextual Info: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 3 — 28 January 2013 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output


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    bga7204 PDF

    MARKING CODE E5 NXP

    Abstract: marking e2 mmic mmic n5
    Contextual Info: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 2 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output IP3 of


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    bga7204marking code e5 nxpmarking e2 mmicmmic n5 PDF

    ERA-5

    Abstract: pl-261 mmic era-5 marking E5 amplifier ERA-5 Mini-Circuits RF Amplifier e5 monolithic amplifier MMIC Amplifier Micro-X marking mmic amplifier e5 TB-431-5 micro-X vv105 Package
    Contextual Info: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    vv1052002/95/ecc/85rhera-5+9pl-261mmic era-5marking e5 amplifierera-5 mini-circuits rf amplifiere5 monolithic amplifiermmic amplifier micro-x markingmmic amplifier e5tb-431-5micro-x vv105 package PDF

    marking E5 amplifier

    Abstract: ERA-5SM
    Contextual Info: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    ww1072002/95/ecc/85rhmarking e5 amplifier+1era-5sm PDF

    ERA-5

    Abstract: MMIC Amplifier Micro-X marking PL-261 marking E5 amplifier
    Contextual Info: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    vv1052002/95/ecc/85rhas9100+4era-5mmic amplifier micro-x markingpl-261marking e5 amplifier PDF

    marking E5 amplifier

    Abstract: ERA-5SM ERA-5SME5
    Contextual Info: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    ww1072002/95/ecc/85rhas9100+3marking e5 amplifierera-5smera-5sme5 PDF

    mmic era-5

    Abstract: marking E5 amplifier ERA-5 marking E5 e5 monolithic amplifier PL-261 VV105 TB-431
    Contextual Info: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    vv1052002/95/ecj-std-020cc/85rh+7mmic era-5marking e5 amplifierera-5marking e5e5 monolithic amplifierpl-261tb-431 PDF

    E5 mmic

    Abstract: marking E5 ERA-5SM PL-075 WW107 microwave radio specs MMIC Amplifier Micro-X marking marking E5 amplifier
    Contextual Info: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Protected by US Patent 6,943,629


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    ww1072002/95/ecj-std-020cc/85rh+7e5 mmicmarking e5era-5smpl-075microwave radio specsmmic amplifier micro-x markingmarking e5 amplifier PDF

    ERA-5

    Abstract: PL-261
    Contextual Info: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Protected by US Patent 6,943,629


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    vv1052002/95/ecc/85rhera-5+1pl-261 PDF

    Contextual Info: 1 h - . u n ; - 1 >1 o ^ il ; , I ' -, h 2 . 2 ^ P a p, e il il 2 PRELIMINARY DATA SHEET NEC / BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2746T, 2747T, 2748T 3 V BIAS SILICON MMIC AMPLIFIRES FOR 900 MHz BAND MOBILE TELEPHONE FEATURES • L o w v o lta g e o p e ra tio n - S in g le s u p p ly v o lta g e 3 .0 V T Y P . m in im u m o p e ra tin g v o lta g e 1.8 V


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    jupc2746t2747t2748tpc2747t+1bm27525 PDF

    RF 3132 pinout

    Abstract: TGA4903-SM
    Contextual Info: TGA4903-SM Ka-Band Medium Power Amplifier Key Features Measured Performance Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V, Typical • • • • • Frequency Range: 27 - 32 GHz Psat: 24 dBm, P1dB: 22 dBm Gain: 15 dB Return Loss: 10 dB Bias: Vd = 5 V, Id = 170 mA, Vg = -0.6 V


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    tga4903-smrf 3132 pinout PDF

    Contextual Info: Drop-In Monolithic Ampli er DC-4 GHz Product Features •฀DC-4฀GHz฀ •฀Single฀voltage฀supply •฀Internally฀matched฀to฀50฀ohms •฀Unconditionally฀stable •฀Low฀performance฀variation฀over฀temperature •฀Transient฀protected


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    vv105 PDF

    Contextual Info: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohms • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    ww107 PDF

    Contextual Info: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    vv105 PDF