E40 0000 Search Results

Z86E30

Abstract: Z86E31 Z86E40
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E30

Abstract: Z86E31 Z86E40 P0118 Z86E30/E31/E40
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E3116PSC

Abstract: Z86E30 Z86E31 Z86E40 P36-P30
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E3016SSC

Abstract: AC adapter E40 Z86E30 Z86E31 Z86E40 ih5043
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

ih5043

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E30

Abstract: Z86E31 Z86E40
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E30

Abstract: Z86E31 Z86E40 TDA 2021
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

e40 0000

Abstract: Z86E30 Z86E31 Z86E40 B100B
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

jrc 3580

Abstract: jrc 2043 A00186
Contextual Info: ST62T 40 B/E40 B 8-BIT OTP/EPROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range

jrc 2043 dd

Abstract: jrc 2043
Contextual Info: ST62T 40 B/E40 B 8-BIT OTP/EPROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range

MP 130B

Abstract: MP 130B 00 TL 650 ht
Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n tr o ller FEA TU R ES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options:

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n t r o l l e r FEATURES ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 4 237 24 16 Z86E31 2 125 24 16 Z86E40 4 236 32 16 Device • Programmable OTP Options:

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n t r o l l e r FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 4 237 24 16 Z86E31 2 125 24 16 Z86E40 4 236 32 16 • Programmable OTP Options:

86e4016

Abstract: Z86E4016PSC
Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z86E30/E31/E40 Z8 4K OTP M ic r o c o n t r o l l e r FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 4 237 24 16 Z86E31 2 125 24 16 Z86E40 4 236 32 16 • Programmable OTP Options:

Contextual Info: fZ 7 SGS-IHOMSON M t^EüigiiM IK gë_ ST62T40B/E40B 8-BIT HCMOS MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER ADVANCED DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency

ELECTRONIC BALLAST DIAGRAM 400W

Abstract: ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W
Contextual Info: CAT RE-GEN COVER 02:CAT RE-GEN COVER 02 12/03/2010 16:06 Page 32 Europe Headquarters: Venture Lighting Europe Ltd. Trinity Court Batchworth Island Church Street, Rickmansworth, WD3 1RT, United Kingdom + 44 0845-2302222 Fax: +(44) 0845-2302077 sales@venturelighting.co.uk

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS