E40 0000 Search Results

Z86E3116PSC

Abstract: Z86E30 Z86E31 Z86E40 P36-P30
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E30

Abstract: Z86E31 Z86E40
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

Z86E30

Abstract: Z86E31 Z86E40 TDA 2021
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 1 Z86E30/E31/E40 1 Z8 4K OTP MICROCONTROLLER FEATURES Device ROM KB RAM* (Bytes) I/O Lines Speed (MHz) Z86E30 Z86E31 Z86E40 4 2 4 237 125 236 24 24 32 16 16 16 • Programmable OTP Options: RC Oscillator EPROM Protect Auto Latch Disable

jrc 2043 dd

Abstract: jrc 2043
Contextual Info: ST62T 40 B/E40 B 8-BIT OTP/EPROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range

Contextual Info: fZ 7 SGS-IHOMSON M t^EüigiiM IK gë_ ST62T40B/E40B 8-BIT HCMOS MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER ADVANCED DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

uPD44165084

Abstract: uPD44165084F5-E40-EQ1 uPD44165084F5-E50-EQ1
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

D04A transformer

Abstract: bel T1A ADC F3B ERJ6GEYJ101V AD10200 D00A D02A D03A D04A D06A
Contextual Info: Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning AD10200 a FEATURES Dual, 105 MSPS Minimum Sample Rate Channel-Channel Isolation, >80 dB AC-Coupled Signal Conditioning Included Gain Flatness up to Nyquist: < 0.2 dB

VJ1206U

Abstract: BRES0805 8059D MC1016EP16D H40DM BJ10 AD10200 fairchild fasteners D03A D04A
Contextual Info: Dual Channel, 12-Bit 105 MSPS IF Sampling A/D Converter with Analog Input Signal Conditioning AD10200 a FEATURES Dual, 105 MSPS Minimum Sample Rate Channel-Channel Isolation, >80 dB AC-Coupled Signal Conditioning Included Gain Flatness up to Nyquist: < 0.2 dB

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44164084A, 44164094A, 44164184A, 44164364A 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The μPD44164084A is a 2,097,152-word by 8-bit, the μPD44164094A is a 2,097,152-word by 9-bit, the μPD44164184A is a 1,048,576-word by 18-bit and the μPD44164364A is a 524,288-word by 36-bit synchronous double data rate static

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644082, 44644092, 44644182, 44644362 72M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44644082 is a 8,388,608-word by 8-bit, the μPD44644092 is a 8,388,608-word by 9-bit, the μPD44644182 is a

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324084, 44324094, 44324184, 44324364 36M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44324084 is a 4,194,304-word by 8-bit, the μPD44324094 is a 4,194,304-word by 9-bit, the μPD44324184 is a 2,097,152-word by 18-bit and the μPD44324364 is a 1,048,576-word by 36-bit synchronous double data rate static RAM

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44164082A, 44164092A, 44164182A, 44164362A 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μPD44164082A is a 2,097,152-word by 8-bit, the μPD44164092A is a 2,097,152-word by 9-bit, the μPD44164182A is a 1,048,576-word by 18-bit and the μPD44164362A is a 524,288-word by 36-bit synchronous double data rate static

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44165082A, 44165092A, 44165182A, 44165362A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The μPD44165082A is a 2,097,152-word by 8-bit, the μPD44165092A is a 2,097,152-word by 9-bit, the μPD44165182A is a 1,048,576-word by 18-bit and the μPD44165362A is a 524,288-word by 36-bit synchronous quad data rate static RAM

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44324082, 44324092, 44324182, 44324362 36M-BIT DDR II SRAM 2-WORD BURST OPERATION Description The μPD44324082 is a 4,194,304-word by 8-bit, the μPD44324092 is a 4,194,304-word by 9-bit, the μPD44324182 is a 2,097,152-word by 18-bit and the μPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM

zo 107 MA

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645082 is a 8,388,608-word by 8-bit, the μPD44645092 is a 8,388,608-word by 9-bit, the μPD44645182 is a

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44165084A, 44165094A, 44165184A, 44165364A 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The μPD44165084A is a 2,097,152-word by 8-bit, the μPD44165094A is a 2,097,152-word by 9-bit, the μPD44165184A is a 1,048,576-word by 18-bit and the μPD44165364A is a 524,288-word by 36-bit synchronous quad data rate static RAM

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD44164085A, 44164095A, 44164185A, 44164365A 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44164085A is a 2,097,152-word by 8-bit, the μPD44164095A is a 2,097,152-word by 9-bit, the μPD44164185A