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    E33 MARKING Search Results

    E33 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC
    Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) PDF Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    54ACT244/B2A
    Rochester Electronics LLC 54ACT244/B2A - Dual marked (5962-8776001B2A) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80186-8/BYC
    Rochester Electronics LLC 80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) PDF Buy

    E33 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SANKEN ELECTRIC CO., LTD. SJPZ-E33 1. Scope The present specifications shall apply to an SJPZ-E33. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 060508 1/4 SANKEN ELECTRIC CO., LTD.


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    SJPZ-E33. SJPZ-E33 UL94V-0 PDF

    UCD224

    Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
    Contextual Info: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


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    FJ308/309/310 PMBFJ308: PMBFJ309: PMBFJ310: PMBFJ308/309/310 PMBFJ308, UCD224 transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309 PDF

    5se2

    Abstract: vde 0636/23 358 ez 802 SIEMENS 5SB1 51 DZ SIEMENS 5SB1 61 IEC 60269 SIBA siemens 5SD4 vde 0636/23 gr siemens fuse disconnectors SIBA 50 A Ultra Rapid 50 201 06
    Contextual Info: D & D0 L O W V O L T A G E F U S E S Y S T E M NH FUSE SYSTEM LOW VOLTAGE FUSE LINKS CIRCUIT PROTECTION SOLUTIONS Bussmann are one of the world’s leading suppliers of fuses and fusible protection systems. Provider of the world’s first truly NH FUSE SYSTEM


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    S6025

    Abstract: S51212 top marking S1 S101 S102 S111 S112 S201 S202 S501
    Contextual Info: C&K S Series Slide Switches Features/Benefits S S S S 6 to 15 AMPS Models Available Enclosed housing PC and Snap-in panel mounting Reversing option Typical Applications S S S Portable tools Small appliances Floor care products Build-A-Switch Our easy Build-A-Switch concept allows you to mix and match options to create the switch you need. Below is a complete


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    S511

    Abstract: SPDT Slide Switch SS 6 S712 S101 S102 S111 S112 S201 S202 S501
    Contextual Info: S Series Slide Switches Features/Benefits S S S S 6 to 15 AMPS Models Available Enclosed housing PC and Snap-in panel mounting Reversing option Typical Applications S S S Portable tools Small appliances Floor care products Build-A-Switch Our easy Build-A-Switch concept allows you to mix and match options to create the switch you need. Below is a complete


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    E43 marking

    Contextual Info: INCH-POUND MIL-M-38510/131A 21 October 2003 SUPERSEDING MIL-M-38510/131 15 July 1982 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, LOW NOISE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.


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    MIL-M-38510/131A MIL-M-38510/131 MIL-PRF-38535. MIL-M38510 MIL-M-38510 E43 marking PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using


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    PD44164084, 18M-BIT PD44164084 152-word PD44164184 576-word 18-bit PD44164364 288-word 36-bit PDF

    transistor marking E39

    Abstract: E43 marking 425V03 transistor MARKING K4 qml38535
    Contextual Info: INCH-POUND MIL-M-38510/117C 11 August 2005 SUPERSEDING MIL-M-38510/117B 10 February 2004 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, ADJUSTABLE, POSITIVE, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.


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    MIL-M-38510/117C MIL-M-38510/117B MIL-PRF-38535 LM117H LM117K LM150K LM138K transistor marking E39 E43 marking 425V03 transistor MARKING K4 qml38535 PDF

    STF-01-FS

    Abstract: SCF-154426-02-MA
    Contextual Info: SEAF to SEAM CUSTOM ISSUE FOR REVIEW. SCF-154426-02-MA RELEASE FOR LIMITED PRODUCTION TOP LAYER C1 C2 UPDATE ITEM NUMBERS IN BOM ASP`S ARE REVERSED ; UPDATE C4 FROM .34 TO .40 10.000 PINOUT TABLE J1 9.3994 J2 K1 A1 LAYER STACKUP C8 SEAM SEAF C3 C9 K40 SCF-154426-02-MA


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    SCF-154426-02-MA FR0100) LEX\SCF\154000\154426-02\SCF-154426-02-MA ASP-134486-01 ASP-134488-01 STF-01-FS STF-02-NS SUB-SCF-154426-02-MA STF-01-FS SCF-154426-02-MA PDF

    FR0100

    Abstract: ASP-134486-01 UL796 ASP-134488-01 STF-02-NS NA-FL-WI-2003-M STF-01-FS FR8525 IPC-6013 NA-FL-WI-1026-M
    Contextual Info: SEAF to SEAM CUSTOM RELEASED FOR LIMITED PRODUCTION SCF-154426-03-MA UPDATE CONNECTOR HEIGHTS IN SIDE VIEW. TOP LAYER 5.000 C1 PINOUT TABLE C2 J1 4.3994 UPDATE ITEM NUMBERS IN BOM. SIGNAL J2 A1 RELEASE FOR PRODUCTION;ADD COVERFILM OPENINGS UNDER CONNECTOR STANDOFFS


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    SCF-154426-03-MA FR0120 FR8525 LEX\SCF\154000\154426-03\SCF-154426-03-MA ASP-134486-01 ASP-134488-01 STF-01-FS STF-02-NS SUB-SCF-154426-03-MA FR0100 UL796 NA-FL-WI-2003-M FR8525 IPC-6013 NA-FL-WI-1026-M PDF

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365


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    PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit PDF

    M15821EJ2V0DS

    Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using


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    PD44164082, 18M-BIT PD44164082 152-word PD44164182 576-word 18-bit PD44164362 288-word 36-bit M15821EJ2V0DS PDF

    HN3C02F

    Abstract: toshiba voltage tuner BL00
    Contextual Info: TOSHIBA HN3C02F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C02F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads


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    HN3C02F N3C02F 2400MHz HN3C02F toshiba voltage tuner BL00 PDF

    Contextual Info: TOSHIBA HN3C02F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C02F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads


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    HN3C02F N3C02F 2400MHz PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE SW ITCHING, INVERTER CIRCUIT, INTERFACE RN1607-RN1609 CIRCUIT AND Unit in mm DRIVER + 0.2 2.8 - n.3 CIRCUIT APPLICATIONS. + 0.2 • • • • • 1.6 - 0.1 Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors


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    RN1607-RN1609 RN2607 RN2609 RN1607 RN1608 RN1609 RN1608 PDF

    XC601B

    Abstract: marking 601b fet e22 diode zener ZD 103 diode marking e41
    Contextual Info: XC601B Series Lithium Secondary Battery Charge / Discharge Protection IC u u u u u CMOS, Low power consumption Single cell Lithium Ion secondary battery use Over-charge detection : 4.05V to 4.45V ± 1.0% Over-discharge detection : 2.1V to 2.9V ± 3.0% Short circuit protection : 0.05V to 0.2V


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    XC601B XC601BN105 XC601BN110 XC601BN205 XC601BN210 XC601BN305 XC601BN310 XC601BN405 XC601BN410 marking 601b fet e22 diode zener ZD 103 diode marking e41 PDF

    Contextual Info: RN4605 SILICON PNP EPITAXIAL PLANAR TYPE SILIC0N NPN EPITAXIAL PLANAR TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. 2 .8 U nit in mm +02 0.3 - + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type with 6 leads


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    RN4605 PDF

    corrosion

    Abstract: Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302
    Contextual Info: MSH/MPH series Connectors Connectors for for navy navy applications applications and and heavy heavy duty duty industries industries MSH/MPH series Connectors and interconnect systems for harsh environments The company designs, manufactures and markets high performance interconnect solutions for severe environments


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    2006E corrosion Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302 PDF

    e33b

    Abstract: tuner uhf Ghz HN3C03F hn3c03
    Contextual Info: TOSHIBA HN3C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C03F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads


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    HN3C03F N3C03F e33b tuner uhf Ghz HN3C03F hn3c03 PDF

    FAZ-C4 equivalent

    Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
    Contextual Info: 12/0 Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Miniature Circuit-Breakers, MCB Enclosures, Fuse Enclosures Moeller HPL0211-2004/2005 For Immediate Delivery call KMParts.com at 866 595-9616 Overview 12/1 Miniature circuit-breakers MCB enclosures, fuse enclosures


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    HPL0211-2004/2005 -GSTA-1/50 -GSTA-2/50 GST00 -40-60-AOU FAZ-C4 equivalent SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT PDF

    HN3C01F

    Contextual Info: TOSHIBA HN3C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C01F TV TUNER, VHF CONVERTER APPLICATION. TV VHF RF AMPLIFIER APPLICATION. Unit in mm + 2.8 - • Including Two Devices in SM6 Super Mini Type with 6Leads • Low Reverse Transfer Capacitance : Cre = 0.38pF (Typ.)


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    HN3C01F N3C01F 1400MHz HN3C01F PDF

    td 1603

    Abstract: 1606 B 1603CR
    Contextual Info: RN1601, 1602,1603 RN1604, 1605,1606 RN160I SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D U nit in mm DRIVER + 0.2 CIRCUIT APPLICATIONS. 2 ji-n .3 + 0.2 Î.6-0.1 ET Including Two Devices in SM6 (Super Mini Type with 6 leads) W ith Built-in Bias Resistors


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    RN1601, RN1604, RN160I) RN2601 RN2606 RN1601 RN1602 RN1603 RN1604 RN1605 td 1603 1606 B 1603CR PDF

    TOSHIBA Marking r2

    Contextual Info: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4608 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AN D DRIVER CIRCUIT APPLICATIONS. 2.8 -0 .3 + 0.2 1.6-0.1 • • • • Including Two Devices in SM6 Super Mini Type with 6 leads


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    RN4608 47kil TOSHIBA Marking r2 PDF

    25LB10-Q-Z

    Abstract: 25LB10-Q
    Contextual Info: Mechanical Encoders SERIES 25L Hex, Gray and Quadrature Code FEATURES • Price Competitive to Similar Designs • Quality Construction and Contact Materials • Multiple Code and Indexing Choices DIMENSIONS • 100,000 Life Cycles • Less than 1.0" Square


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    25LB10-Q-Z 25LB10-Q-Z 25LB10-Q PDF