E33 MARKING Search Results
E33 MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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E33 MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SANKEN ELECTRIC CO., LTD. SJPZ-E33 1. Scope The present specifications shall apply to an SJPZ-E33. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 060508 1/4 SANKEN ELECTRIC CO., LTD. |
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SJPZ-E33. SJPZ-E33 UL94V-0 | |
UCD224
Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
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FJ308/309/310 PMBFJ308: PMBFJ309: PMBFJ310: PMBFJ308/309/310 PMBFJ308, UCD224 transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309 | |
5se2
Abstract: vde 0636/23 358 ez 802 SIEMENS 5SB1 51 DZ SIEMENS 5SB1 61 IEC 60269 SIBA siemens 5SD4 vde 0636/23 gr siemens fuse disconnectors SIBA 50 A Ultra Rapid 50 201 06
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S6025
Abstract: S51212 top marking S1 S101 S102 S111 S112 S201 S202 S501
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S511
Abstract: SPDT Slide Switch SS 6 S712 S101 S102 S111 S112 S201 S202 S501
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E43 markingContextual Info: INCH-POUND MIL-M-38510/131A 21 October 2003 SUPERSEDING MIL-M-38510/131 15 July 1982 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, LOW NOISE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense. |
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MIL-M-38510/131A MIL-M-38510/131 MIL-PRF-38535. MIL-M38510 MIL-M-38510 E43 marking | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using |
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PD44164084, 18M-BIT PD44164084 152-word PD44164184 576-word 18-bit PD44164364 288-word 36-bit | |
transistor marking E39
Abstract: E43 marking 425V03 transistor MARKING K4 qml38535
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MIL-M-38510/117C MIL-M-38510/117B MIL-PRF-38535 LM117H LM117K LM150K LM138K transistor marking E39 E43 marking 425V03 transistor MARKING K4 qml38535 | |
STF-01-FS
Abstract: SCF-154426-02-MA
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SCF-154426-02-MA FR0100) LEX\SCF\154000\154426-02\SCF-154426-02-MA ASP-134486-01 ASP-134488-01 STF-01-FS STF-02-NS SUB-SCF-154426-02-MA STF-01-FS SCF-154426-02-MA | |
FR0100
Abstract: ASP-134486-01 UL796 ASP-134488-01 STF-02-NS NA-FL-WI-2003-M STF-01-FS FR8525 IPC-6013 NA-FL-WI-1026-M
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SCF-154426-03-MA FR0120 FR8525 LEX\SCF\154000\154426-03\SCF-154426-03-MA ASP-134486-01 ASP-134488-01 STF-01-FS STF-02-NS SUB-SCF-154426-03-MA FR0100 UL796 NA-FL-WI-2003-M FR8525 IPC-6013 NA-FL-WI-1026-M | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 |
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PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit | |
M15821EJ2V0DSContextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µPD44164082 is a 2,097,152-word by 8-bit, the µPD44164182 is a 1,048,576-word by 18-bit and the µPD44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using |
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PD44164082, 18M-BIT PD44164082 152-word PD44164182 576-word 18-bit PD44164362 288-word 36-bit M15821EJ2V0DS | |
HN3C02F
Abstract: toshiba voltage tuner BL00
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HN3C02F N3C02F 2400MHz HN3C02F toshiba voltage tuner BL00 | |
Contextual Info: TOSHIBA HN3C02F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C02F Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION. TV TUNER, UHF CONVERTER APPLICATION. • • +0.2 2.8 - 0.3 +0.2 1.6 -0 .1 Including Two Devices in SM6 Super Mini Type with 6Leads |
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HN3C02F N3C02F 2400MHz | |
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Contextual Info: SILICON NPN EPITAXIAL TYPE SW ITCHING, INVERTER CIRCUIT, INTERFACE RN1607-RN1609 CIRCUIT AND Unit in mm DRIVER + 0.2 2.8 - n.3 CIRCUIT APPLICATIONS. + 0.2 • • • • • 1.6 - 0.1 Including Two Devices in SM6 Super Mini Type with 6 leads W ith Built-in Bias Resistors |
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RN1607-RN1609 RN2607 RN2609 RN1607 RN1608 RN1609 RN1608 | |
XC601B
Abstract: marking 601b fet e22 diode zener ZD 103 diode marking e41
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XC601B XC601BN105 XC601BN110 XC601BN205 XC601BN210 XC601BN305 XC601BN310 XC601BN405 XC601BN410 marking 601b fet e22 diode zener ZD 103 diode marking e41 | |
Contextual Info: RN4605 SILICON PNP EPITAXIAL PLANAR TYPE SILIC0N NPN EPITAXIAL PLANAR TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. 2 .8 U nit in mm +02 0.3 - + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 Super Mini Type with 6 leads |
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RN4605 | |
corrosion
Abstract: Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302
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2006E corrosion Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302 | |
e33b
Abstract: tuner uhf Ghz HN3C03F hn3c03
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HN3C03F N3C03F e33b tuner uhf Ghz HN3C03F hn3c03 | |
FAZ-C4 equivalent
Abstract: SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT
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HPL0211-2004/2005 -GSTA-1/50 -GSTA-2/50 GST00 -40-60-AOU FAZ-C4 equivalent SPC-E-280 220V LED Bulb circuit diagram FAZ-XHI11 FAZ-S10 FAZ-B10 FIM-40 IEC 60898 category C z-r230 Z-KWZ/400/3-CT | |
HN3C01FContextual Info: TOSHIBA HN3C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C01F TV TUNER, VHF CONVERTER APPLICATION. TV VHF RF AMPLIFIER APPLICATION. Unit in mm + 2.8 - • Including Two Devices in SM6 Super Mini Type with 6Leads • Low Reverse Transfer Capacitance : Cre = 0.38pF (Typ.) |
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HN3C01F N3C01F 1400MHz HN3C01F | |
td 1603
Abstract: 1606 B 1603CR
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RN1601, RN1604, RN160I) RN2601 RN2606 RN1601 RN1602 RN1603 RN1604 RN1605 td 1603 1606 B 1603CR | |
TOSHIBA Marking r2Contextual Info: SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE RN4608 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AN D DRIVER CIRCUIT APPLICATIONS. 2.8 -0 .3 + 0.2 1.6-0.1 • • • • Including Two Devices in SM6 Super Mini Type with 6 leads |
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RN4608 47kil TOSHIBA Marking r2 | |
25LB10-Q-Z
Abstract: 25LB10-Q
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25LB10-Q-Z 25LB10-Q-Z 25LB10-Q |