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E230
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Gilway Technical Lamp
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Large Rectangular LED (2.3x7) |
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PDF
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70.04KB |
2 |
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E230
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Unknown
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Semiconductor Master Cross Reference Guide |
Scan |
PDF
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110.97KB |
1 |
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E230
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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164.13KB |
1 |
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E230
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Unknown
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Basic Transistor and Cross Reference Specification |
Scan |
PDF
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45.6KB |
1 |
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E230
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Unknown
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Shortform Datasheet & Cross References Data |
Short Form |
PDF
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83.4KB |
1 |
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E23-00A
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Cherry
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Snap Action, Limit Switches, Switches, SWITCH SNAP SPDT 5A QC TERM |
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PDF
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5 |
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E23-00A
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 5A 250VAC |
Original |
PDF
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119.4KB |
3 |
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E23-00A
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Cherry
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SWITCH, MINIATURE LIGHT AND STANDARD FORCE, QC TERMINAL |
Scan |
PDF
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84.22KB |
1 |
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E23-00AX
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 5A 250VAC |
Original |
PDF
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119.4KB |
3 |
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E23-00H
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 5A 250VAC |
Original |
PDF
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119.4KB |
3 |
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E23-00HX
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Cherry Semiconductor
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SNAP ACTION SWITCH SPDT BUTTON 5A 250VAC |
Original |
PDF
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119.4KB |
3 |
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E23-00K
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Cherry
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Snap Action, Limit Switches, Switches, SW ROLLER SPDT 5A QC TERM 125V |
Original |
PDF
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5 |
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E23-00K
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Cherry
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SWITCH, MINIATURE LIGHT AND STANDARD FORCE, QC TERMINAL |
Scan |
PDF
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84.22KB |
1 |
NCE2301F
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -20V drain-source voltage, -2A continuous drain current, RDS(ON) less than 150mΩ at VGS=-2.5V, available in SOT-23 package. |
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PDF
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NCE2302C
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NCEPOWER
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NCE2302C N-Channel Enhancement Mode MOSFET with 20V drain-source voltage, 3A continuous drain current, 80mΩ RDS(ON) at 2.5V VGS, and low gate charge, suitable for battery protection and switching applications in SOT-23 package. |
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PDF
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NCE2309
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NCEPOWER
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NCE2309 is a -60V, -1.6A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 140 mΩ at VGS = -10V and low gate charge, suitable for load switch and PWM applications. |
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PDF
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GD32E230G4U6TR
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, ARM Cortex-M23, 72 MHz, 64 KB Flash, 8 KB SRAM, 12-bit ADC, 5x 16-bit timers, PWM, 2x SPI, 2x I2C, 2x USART, I2S, 1.8-3.6 V, -40 to +105 °C. |
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PDF
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NCE2303
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NCEPOWER
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NCE2303 is a channel enhancement mode power MOSFET with -30V drain-source voltage, -2.0A continuous drain current, and low on-state resistance of 72mΩ typical at VGS=-10V, suitable for load switch and PWM applications in SOT-23 surface mount package. |
Original |
PDF
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GD32E230F6V6TR
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GigaDevice Semiconductor (Beijing) Inc
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32-bit ARM Cortex-M23, 72 MHz, 64 KB Flash, 8 KB SRAM, 12-bit ADC, 5x16-bit timers, PWM, 2xSPI/I2C/USART, I2S, 1.8-3.6V, -40 to +105°C. |
Original |
PDF
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NCE2302B
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NCEPOWER
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NCE2302B is an N-Channel Enhancement Mode Power MOSFET with 20V drain-source voltage, 3.3A continuous drain current, and low on-resistance of less than 60mΩ at 2.5V gate drive, suitable for battery protection and switching applications. |
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PDF
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NCE2301F
