E196689 Search Results

Contextual Info: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 • Low-loss, rugged SPT diode  Smooth switching SPT diode for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  High power density  AlSiC base-plate for high power cycling

Contextual Info: Data Sheet, Doc. No. 5SYA 1435-01 01-2014 5SLG 0500P330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 500 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 4500 V 800 A ABB HiPakTM IGBT Module 5SNA 0800J450300 Doc. No. 5SYA1402-01 Mar. 12 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPak DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-04 06-2014 •     Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode  Smooth switching SPT diode for good EMC  Industry standard package  High power density  AlSiC base-plate for high power cycling

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

Contextual Info: VCE IC = = 6500 V 750 A ABB HiPakTM IGBT Module 5SNA 0750G650300 Doc. No. 5SYA 1600-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling

5SNA 1200G450300

Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-04 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

Contextual Info: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 •    Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling

Contextual Info: VCE IC = = 4500 V 650 A ABB HiPak IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-04 06-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling

Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance