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E1003
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Gilway Technical Lamp
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T-1 3/4 Mega Bright White LED |
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239.06KB |
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E1003
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Gilway Technical Lamp
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Mega bright white LED, T-1 3/4. Lens clear. Luminous intensity at 20mA: 1400mcd(min), 5600mcd(typ). Forward voltage at 20mA: 3.6V(typ), 4.0V(max). |
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1.29MB |
17 |
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E1003
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Gilway Technical Lamp
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LED, Single, 5600mcd Intensity |
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587.45KB |
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E1003S.18.10
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General Cable
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Multiple Conductor Cables, Cables, Wires, 3C/22 7/30BC UNSH CMR/CL3R |
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259 |
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E1003S.30.10
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General Cable
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Multiple Conductor Cables, Cables, Wires, 3C/22 7/30BC UNSH CMR/CL3R |
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259 |
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E1003S.41.10
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General Cable
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Multiple Conductor Cables, Cables, Wires, 3C/22 7/30BC UNSH CMR/CL3R |
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259 |
MMBT2907A(RANGE:100-300)
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JCET Group
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MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300. |
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MMDT4403(RANGE:100-300)
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JCET Group
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Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter breakdown voltage, -0.6A continuous collector current, 0.2W power dissipation, and transition frequency of 200MHz. |
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MMBT3904-G(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, DC current gain from 100 to 300, and transition frequency of 300MHz. |
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MMDT2227(RANGE:100-300)
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JCET Group
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Dual transistor in SOT-363 package containing one NPN 2222A and one PNP 2907A, each with 600 mA continuous collector current, 200 mW power dissipation, and suitable for amplification and switching applications. |
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MMST5401(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz. |
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MMDT5551(RANGE:100-300)
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JCET Group
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Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications. |
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MMBT3906 2A(RANGE:100-300)
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JCET Group
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MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300. |
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A42(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-89-3L package with 305 V collector-emitter breakdown voltage, 200 mA continuous collector current, 500 mW power dissipation, and low collector-emitter saturation voltage. |
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FMMT491(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-23 package with 60 V collector-emitter voltage, 1 A continuous collector current, 250 mW power dissipation, and 150 MHz transition frequency, suitable for general-purpose switching applications. |
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FMMT449(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-23 package with 50 V collector-base voltage, 30 V collector-emitter voltage, 1 A collector current, 200 mW power dissipation, and 150 MHz transition frequency. |
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MMBT4401(RANGE:100-300)
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JCET Group
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MMBT4401 NPN transistor in SOT-23 package, with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, 300mW power dissipation, and transition frequency of 250MHz. |
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MMDT5451(10K)(RANGE:100-300)
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JCET Group
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Dual transistor (NPN+PNP) in SOT-363 package featuring 5551 NPN and 5401 PNP types, with 160 V collector-emitter breakdown voltage, 0.2 A continuous collector current, 0.2 W power dissipation, and hFE up to 300. |
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MMBT3904T(RANGE:100-300)
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JCET Group
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MMBT3904T is an NPN transistor in a SOT-523 plastic package, with a collector current of 200 mA, collector-emitter voltage of 40 V, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMBT3904(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2907A(RANGE:100-300)
