E1. N DIODE Search Results

HDB3 and CMI which is better

Abstract: M-tron CON12 SO-64 TMSLF CS61583 CS61583-IL5 CS61583-IQ5 CS61584 AMI Semiconductor remote controller
Contextual Info: CS61583 A Cirrus Logic Company D ual T1/E1 Line Interface Features General D e scrip tio n • Dual T1/E1 Line Interface The CS61583 is a dual line interface for T1/E1 applica­ tions, designed for high-volume cards where low power and high density are required. Each channel features

T3255-4

Contextual Info: 19-3798; Rev 0; 09/06 Integrated T1/E1/J1 Short-Haul and Long-Haul Protection Switch The MAX4670 is an integrated T1/E1/J1 analog protection switch for 1+1 and N+1 line-card redundancy applications. It protects two T1/E1/J1 ports by combining eight SPDT switches in a single package. The

IEGT

Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
Contextual Info: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2

MG300Q2YS65H

Contextual Info: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

Contextual Info: MG150Q2YS65H TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm • High input impedance • Enhancement-mode • The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

CM300DY-28H

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram

CM300DY-28H

Abstract: OF IGBT 600A 800V
Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram

Contextual Info: PM4351 COMET STANDARD PRODUCT DATA SHEET ISSUE 11 COMBINED E1/T1 TRANSCEIVER :1 2: 10 PM PMC-1970624 ur sd ay ,0 3N COMET ov em be r, 20 05 10 PM4351 DATA SHEET ISSUE11: NOVEMBER 2005 Do wn lo ad ed by C on te n tT ea m of Pa r tm in er In co n Th COMBINED E1/T1

CM150DY-12H

Abstract: CM150DY12H
Contextual Info: MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM150DY24H

Abstract: cm150dy-24h IGBT 1200V 60A 150A 1200V IGBT MITSUBISHI CM150DY-24H 1200V 150A
Contextual Info: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM200DY-12H

Contextual Info: MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM300DY-12H

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM150DY-24H

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM150DY-12H

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 C1 E2 C2E1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM100DY-24H

Contextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM200DY-24H

Contextual Info: MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 C1 E2 C2E1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

M6 transistor

Abstract: CM200DY28H CM200DY-28H
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

160N04

Abstract: MP-25ZT nec a640
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

d1875

Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note

TDI CCD bi-directional

Abstract: tdi ccd 512 tdi ccd dalsa ia-d2-0512 i1991
Contextual Info: MSE D y' y / V i/ • s b is im ooooaas DALSA INC. oti « hals IL-E1/F2 Series TDI QUIETSENSOR CCD Image S e n s o rs IL-E1/IL-F2 Series Two Dimensional Image Sensors for TDI Applications mlsa inc • 2048, 1024 & 512 Pixels with 96 TDI Stages • Bi-directional operation in the

PM4351-RGI

Abstract: PM4351-RI PI3105 TVR diode 4N PM4351 T1B04 048-kbit pm4351rgi Nippon capacitors
Contextual Info: PM4351 COMET STANDARD PRODUCT DATA SHEET ISSUE 11 COMBINED E1/T1 TRANSCEIVER :0 2: 37 AM PMC-1970624 Mo nd ay ,1 4N COMET ov em be r, 20 05 04 PM4351 DATA SHEET ISSUE11: NOVEMBER 2005 Do wn l oa de d by s ar as eli m of sil ico n ex pe rt on COMBINED E1/T1

CM400DY-12H

Contextual Info: MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM200DY-28H

Abstract: CM200DY28H 200A6
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions

CM400DY-12H

Contextual Info: MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions