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    E1. N DIODE Search Results

    E1. N DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    E1. N DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HDB3 and CMI which is better

    Abstract: M-tron CON12 SO-64 TMSLF CS61583 CS61583-IL5 CS61583-IQ5 CS61584 AMI Semiconductor remote controller
    Contextual Info: CS61583 A Cirrus Logic Company D ual T1/E1 Line Interface Features General D e scrip tio n • Dual T1/E1 Line Interface The CS61583 is a dual line interface for T1/E1 applica­ tions, designed for high-volume cards where low power and high density are required. Each channel features


    OCR Scan     		CS61583 220mW CS61584 CS61583 CDB61583 UJ111-Ix0> DB172PP1 DB172PP1 HDB3 and CMI which is better M-tron CON12 SO-64 TMSLF CS61583-IL5 CS61583-IQ5 CS61584 AMI Semiconductor remote controller PDF

    T3255-4

    Contextual Info: 19-3798; Rev 0; 09/06 Integrated T1/E1/J1 Short-Haul and Long-Haul Protection Switch The MAX4670 is an integrated T1/E1/J1 analog protection switch for 1+1 and N+1 line-card redundancy applications. It protects two T1/E1/J1 ports by combining eight SPDT switches in a single package. The


    Original     		MAX4670 T3255-4* 21-0140K T3255 T3255-4 PDF

    IEGT

    Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
    Contextual Info: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2


    Original     		MG400FXF2YS53 IEGT TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275 PDF

    CM300DY-28H

    Abstract: OF IGBT 600A 800V
    Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B P - DIA. 4 TYP. C E2 C1 E2 C2 C2E1 R C1 E1 M R L F G G H S - M6 THD. (3 TYP) N K E N K K D TAB #110, t = 0.5 Q J E2 C2 N C2E1 C1 C1 E1 E2 Outline Drawing and Circuit Diagram


    Original     		CM300DY-28H CM300DY-28H OF IGBT 600A 800V PDF

    CM200DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM200DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM200DY-12H CM200DY-12H PDF

    CM300DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM300DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM300DY-12H CM300DY-12H PDF

    CM150DY-24H

    Contextual Info: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM150DY-24H CM150DY-24H PDF

    CM150DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 C1 E2 C2E1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM150DY-12H CM150DY-12H PDF

    CM100DY-24H

    Contextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM100DY-24H CM100DY-24H PDF

    CM100DY-24H

    Contextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L R - M5 THD 3 TYP. P - DIA. (2 TYP.) J N J TAB#110 t=0.5 J N M D F Q G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM100DY-24H CM100DY-24H PDF

    160N04

    Abstract: MP-25ZT nec a640
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) 160N04 MP-25ZT nec a640 PDF

    CM400DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM400DY-12H CM400DY-12H PDF

    CM200DY-28H

    Abstract: CM200DY28H 200A6
    Contextual Info: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM200DY-28H CM200DY-28H CM200DY28H 200A6 PDF

    CM400DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G E2 C1 E2 C2E1 G2 P J D G1 E1 C P K R Q - M6 THD 3 TYP. N - DIA. (4 TYP.) TAB#110 t=0.5 M L M E H M G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions


    Original     		CM400DY-12H CM400DY-12H PDF

    82N06

    Abstract: transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY


    Original     		NP82N06PLG NP82N06PLG NP82N06PLG-E1-AY NP82N06PLG-E2-AY O-263 MP-25ZP) O-263) 82N06 transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28 PDF

    CM100DY-12H

    Abstract: CM100DY12H MITSUBISHI IGBT 100A
    Contextual Info: MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM100DY-12H CM100DY-12H CM100DY12H MITSUBISHI IGBT 100A PDF

    CM75DY-24H

    Contextual Info: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM75DY-24H CM75DY-24H PDF

    CM75DY-12H

    Contextual Info: MITSUBISHI IGBT MODULES CM75DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N G1 E1 D C1 R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM75DY-12H CM75DY-12H PDF

    CM50DY-24H

    Contextual Info: MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM50DY-24H CM50DY-24H PDF

    CM75DY-28H

    Contextual Info: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM75DY-28H CM75DY-28H PDF

    CM50DY-28H

    Abstract: igbt 800v 50a
    Contextual Info: MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. 2 TYP. E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram


    Original     		CM50DY-28H CM50DY-28H igbt 800v 50a PDF

    1g3gt

    Abstract: 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric
    Contextual Info: iiMiAA K "m 1G3-GT <SmElBCTROñUCS r vT302° 1G3-GT diode Pa912-61 e1 DESCRIPTION A N D R A T I N G = = FOR TV HIGH-VOLTAGE-RECTIFIER APPLICATIONS The 1G3-GT is a filam entary diode designed for use in high-voltage low-current rectifier applications. It is especially


    OCR Scan     		B5-82, B5-85, B6-60, B7-47, 1g3gt 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric PDF

    K4078

    Abstract: C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY 2SK4078 D18885EJ1V0DS
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4078 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4078-ZK-E1-AY Note 2SK4078-ZK-E2-AY


    Original     		2SK4078 2SK4078 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY O-252 O-252) K4078 C277C nec 277c nec marking code 277 C 277 C 2SK4078-ZK-E1-AY 2SK4078-ZK-E2-AY D18885EJ1V0DS PDF

    TDA5255

    Abstract: AG1129 EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES IC TX 434 pll fsk MODULATOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 rx 434 TRANSMITTER TX-434 xtal 16mhz 8pf P-TSSOP-38-1
    Contextual Info: P re liminary Spe c ification, Versio n 1.1, 2 002-11-28 TDA5255 E1 ASK/FSK 434MHz Wireless Transceiver Wireless Components N e v e r s t o p t h i n k i n g . Edition 2002-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


    Original     		TDA5255 434MHz D-81541 AG1129 EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES IC TX 434 pll fsk MODULATOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 rx 434 TRANSMITTER TX-434 xtal 16mhz 8pf P-TSSOP-38-1 PDF