E1-57 X 30 Search Results

Contextual Info: DALLAS SEMICONDUCTOR FEATURES PRELIMINARY DS21Q44 Enhanced QUAD E1 FRAMER FUNCTIONAL DIAGRAM • Four E1 CEPT or PCM-30 /ISDN-PRI framing transceivers Receive Fram er B astìe Store Transm it Formatter B astìe Store • All four framers are fully independent; transmit and

GS8150E18T-225

Abstract: 36T22
Contextual Info: Preliminary GS8150E18/32/36T-225/200/180/166/150/133 1M x 18, 512K x 32, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

IRF9956

Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503 MS-012AA
Contextual Info: PD - 91559B IRF9956 l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.10Ω

Contextual Info: DALLAS SEMICONDUCTOR FEATURES PRELIMINARY DS21Q44 Enhanced QUAD E1 FRAMER FUNCTIONAL DIAGRAM • Four E1 CEPT or PCM-30 /ISDN-PRI framing transceivers Receive Fram er B astìe Store Transm it Formatter B astìe Store • All four framers are fully independent; transmit and

CGD1046HI

Contextual Info: CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 — 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

MCM67Q909

Abstract: MCM69D536 MCM69D618 MCM69Q536 MCM69Q618 MCM69Q618TQ10 MCM69Q618TQ6 MCM69Q618TQ8
Contextual Info: MOTOROLA Order this document by MCM69Q618/D SEMICONDUCTOR TECHNICAL DATA MCM69Q618 Advance Information 64K x 18 Bit Synchronous Separate I/O Fast SRAM The Motorola MCM69Q618 is a 1 Megabit static random access memory, organized as 64K words of 18 bits. It features separate data input and data output buffers and

qe-2000

Abstract: 328A15
Contextual Info: Preliminary GS8151Z18/36T-225/200/180/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp MHz 16Mb Pipelined and Flow Through 225 MHz–133 3.3 V VDD Synchronous NBT SRAM 2.5 V or 3.3 V I/O Features • User-configurable Pipeline and Flow Through mode

IRF7403

Abstract: MS-012AA
Contextual Info: PD - 9.1245B IRF7403 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V

Contextual Info: W DI EDI7F33512V 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in Block Diagrams

HDB3

Abstract: bipolar BC transistor 128-PIN DS21Q42 DS21Q44 DS21Q44T DS21Q44TN RS10 RS11 RS12
Contextual Info: DS21Q44 Enhanced Quad T1 Framer www.maxim-ic.com FEATURES § § § § § § § § § § § § § § § Four E1 CEPT or PCM-30 /ISDN-PRI framing transceivers All four framers are fully independent; transmit and receive sections of each framer are fully independent

DIP-20

Abstract: M74HC4353 M74HC4353B1R M74HC4353M1R M74HC4353RM13TR M74HC4353TTR 300MW
Contextual Info: M74HC4353 ANALOG MULTIPLEXER/DEMULTIPLEXER WITH ADDRESS LATCH : SINGLE 8 CHANNEL • ■ ■ ■ ■ ■ ■ ■ ■ LOGIC LEVEL TRANSLATION TO ENABLE 5V LOGIC SIGNAL TO COMMUNICATE WITH ± 5V ANALOG SIGNAL LOW POWER DISSIPATION: ICC = 4µA MAX. at TA = 25 °C

Contextual Info: HV57908 8MHz, 64-Channel Serial to Parallel Converter with Push-Pull Outputs Features General Description ► ► ► ► ► ► ► ► ► ► The HV57908 is a low voltage serial to high voltage parallel converter with push-pull outputs. The device has been

Contextual Info: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance

BGY847BO

Abstract: SC16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D294 BGY847BO Optical receiver module Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC16 1998 Mar 13 Philips Semiconductors Product specification Optical receiver module

ES4427

Abstract: ES4428 16 bit risc processor ESS TECHNOLOGY HD11 HD15 QUAD Video Processor 208 pin db15 keyboard pinout
Contextual Info: ES4428/ES4427 Web/DVD Set-Top Box Solution Product Brief DESCRIPTION ES4428 FEATURES The ES4428/ES4427 Web/DVD Internet set-top box chipset seamlessly combines both Web browser technology and DVD technology into a highly integrated, low-cost solution for the next

M74HCT374B1

Abstract: DIP-20 M74HCT374 M74HCT374B1R M74HCT374M1R M74HCT374RM13TR M74HCT374TTR
Contextual Info: M74HCT374 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING • ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 50 MHz TYP. at VCC = 4.5V LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX) BALANCED PROPAGATION DELAYS:

Contextual Info: USB97C211 ADVANCE INFORMATION Rev 1.2 USB 2.0 Flash Media Controller FEATURES 8051 8 bit microprocessor - Provides low speed control functions - 30 Mhz execution speed at 4 cycles per instruction average - 12K Bytes of internal SRAM for general purpose scratchpad

Contextual Info: xr XRT83SH314 14-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT JULY 2005 REV. 1.0.2 GENERAL DESCRIPTION Additional features include RLOS, a 16-bit LCV counter for each channel, AIS, QRSS/PRBS generation/detection, TAOS, DMO, and diagnostic loopback modes.

DQ03-2

Contextual Info: EDI2GG43264V 1MB 4x64Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x64Kx32 Synchronous The EDI2GG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM (120 contacts) Module, organized as 4x64Kx32. The Module contains four (4) Synchronous Burst Ram Devices,

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MCM72F8/D SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 2MB and 4MB Synchronous Fast Static RAM Module The MCM72F8 2MB is configured as 256K x 72 bits and the MCM72F9 (4MB) is configured as 512K x 72 bits. Both are packaged in a 168–pin dual–in–line

Contextual Info: XRT86VL30 T1/E1/J1 BITS ELEMENT - HARDWARE MANUAL AUGUST 2008 REV. 1.0.2 GENERAL DESCRIPTION The XRT86VL30 is a single channel T1/E1/J1 BITS clock recovery element and framer and LIU integrated solution featuring R3 technology Relayless, Reconfigurable, Redundancy .

Contextual Info: e x _ EDI8F3265C ELECTRONIC DESIGNS INC. High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed 64Kx32 bit CMOS Static

HDB3 E2

Abstract: LXT384 10BQ060 11DQ04 LXT384BE LXT384LE MBR0540T1
Contextual Info: LXT384 Octal T1/E1/J1 Line Interface Unit Datasheet The LXT384 is an octal short haul Pulse Code Modulation PCM Line Interface Unit for use in both 1.544 Mbps (T1) and 2.048 Mbps (E1) applications. It incorporates eight independent receivers and eight independent transmitters in a single 144 pin LQFP or 160 ball PBGA