NCE0157G
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NCEPOWER
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NCE0157G is a 100V, 57A NCEN-Channel Enhancement Mode Power MOSFET with advanced trench technology, offering low RDS(ON) of 12.5mΩ at VGS=10V, suitable for high-frequency switching and DC/DC conversion applications. |
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NCE0157
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NCEPOWER
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NCE0157 N-channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability. |
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NCE0157A2D
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NCEPOWER
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NCE0157A2D is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and ultralow RDS(ON) of 12.5mΩ typical at VGS=10V, designed for high-frequency switching and power applications. |
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NCE0157D
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NCEPOWER
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NCE0157D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. |
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NCE0157A2
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NCEPOWER
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NCE0157A2 is a Channel Enhancement Mode Power MOSFET with 100V VDS, 57A ID, and RDS(ON) less than 14.5mΩ at VGS=10V, using advanced trench technology for low gate charge and high efficiency in power switching applications. |
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NCE0157A
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NCEPOWER
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NCE0157A2 is a channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12.5mΩ at VGS=10V, suitable for high-frequency switching applications. |
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NCE0157AK
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NCEPOWER
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NCE0157AK N-Channel Enhancement Mode MOSFET with 100V VDS, 57A ID, and 16mΩ RDS(ON) at 10V VGS, featuring high ESD capability, low gate charge, and TO-252-2L package for power switching applications. |
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NCE0157G
