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E602
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Gilway Technical Lamp
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Super Flux LED |
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514.94KB |
2 |
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E602
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
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122.26KB |
1 |
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E60213
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ifm efector
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REDUCING BUSH |
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177.33KB |
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NCE6020AQ
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NCEPOWER
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NCE6020AQ is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 20A continuous drain current, RDS(ON) less than 23mΩ at VGS=10V, and low gate charge, suitable for high-frequency switching applications. |
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NCE6020A
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NCEPOWER
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NCE6020A is a Pb-free N-channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. |
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NCE6020AK
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NCEPOWER
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NCE6020AK is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of less than 35mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. |
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NCE6020AI
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NCEPOWER
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NCE6020AI is a 60V, 20A channel enhancement mode power MOSFET with RDS(ON) less than 25mΩ at VGS=10V, designed using advanced trench technology for low gate charge and high switching efficiency in power applications. |
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NCE6020AL
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NCEPOWER
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NCE6020AL is a channel enhancement mode power MOSFET with 60V drain-source voltage, 20A continuous drain current, and low on-resistance of 25mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications. |
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NCE6025Q
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NCEPOWER
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NCE6025Q is a 60V, 25A N-channel enhancement mode power MOSFET with RDS(ON) less than 14mΩ at VGS=10V, featuring high cell density design, low gate charge, and DFN3.3x3.3-8L package for efficient heat dissipation. |
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NCE6020AQ
