S9012-G(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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S9013-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 500 mA collector current, 25 V collector-emitter voltage, 300 mW power dissipation, and DC current gain ranging from 120 to 400 depending on rank. |
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SS8550(RANGE:200-350)
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JCET Group
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SS8550 PNP transistor in SOT-23 package with -40V collector-base voltage, -25V collector-emitter voltage, -1.5A collector current, 500mW power dissipation, and DC current gain ranging from 120 to 400. |
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S8550 2TY(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package, rated for collector current of -0.5A, collector-emitter voltage of -25V, with DC current gain up to 400 and transition frequency of 150MHz. |
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S8050-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with collector current of 500 mA, collector-emitter voltage of 25 V, DC current gain up to 400, and transition frequency of 150 MHz. |
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S8050 J3Y(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package, with collector current of 0.5A, collector-emitter voltage of 25V, DC current gain up to 400, and transition frequency of 150MHz. |
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SS8550-G(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for high-current switching applications. |
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SS8050(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with collector current up to 1.5 A, collector-emitter breakdown voltage of 25 V, DC current gain (hFE) from 120 to 400, and transition frequency of 100 MHz. |
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PXT8550(RANGE:200-350)
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JCET Group
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PXT8550 PNP transistor in SOT-89-3L package with -25 V collector-emitter voltage, -1.5 A continuous collector current, 0.5 W power dissipation, and DC current gain ranging from 85 to 400 depending on rank. |
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S9012 2T1(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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SS8050-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
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S9013 J3(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
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PXT8050(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-89-3L package with 25V collector-emitter voltage, 1.5A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 85 to 400, suitable for general-purpose switching and amplification applications. |
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M8050(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 40V collector-base voltage, 25V collector-emitter voltage, 800mA collector current, 200mW power dissipation, and DC current gain ranging from 45 to 400 depending on operating conditions. |
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S9013W(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-323 package with 40 V collector-base voltage, 25 V collector-emitter voltage, 500 mA collector current, 200 mW power dissipation, and DC current gain ranging from 120 to 400. |
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SS8550 Y2(RANGE:200-350)
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JCET Group
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SS8550 PNP transistor in SOT-23 package with -25V collector-emitter voltage, -1.5A collector current, 300mW power dissipation, and DC current gain up to 400, suitable for high-current switching applications. |
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S9012W(RANGE:200-350)
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JCET Group
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S9012W is a PNP transistor in SOT-323 package with 40V collector-base voltage, 25V collector-emitter voltage, -500mA collector current, 200mW power dissipation, and DC current gain ranging from 120 to 400. |
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S9012-G(RANGE:200-350)
