MMDT5551(RANGE:100-300)
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JCET Group
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Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications. |
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MMDT4403(RANGE:100-300)
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JCET Group
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Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter breakdown voltage, -0.6A continuous collector current, 0.2W power dissipation, and transition frequency of 200MHz. |
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MMBT3904-G(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, DC current gain from 100 to 300, and transition frequency of 300MHz. |
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MMDT2227(RANGE:100-300)
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JCET Group
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Dual transistor in SOT-363 package containing one NPN 2222A and one PNP 2907A, each with 600 mA continuous collector current, 200 mW power dissipation, and suitable for amplification and switching applications. |
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MMST5401(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz. |
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MMBT2907A(RANGE:100-300)
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JCET Group
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MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300. |
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2N4403(RANGE:100-300)
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JCET Group
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2N4403 PNP transistor in TO-92 package with collector-base voltage of -40V, collector current up to -600mA, DC current gain up to 300, transition frequency of 200MHz, and collector power dissipation of 0.625W. |
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A92(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-89-3L package with -305V collector-emitter breakdown voltage, -200mA continuous collector current, 500mW power dissipation, and DC current gain up to 300. |
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FZT955(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-223 package with -140V collector-emitter voltage, -4A collector current, 0.8W power dissipation, and high DC current gain, suitable for high-voltage switching applications. |
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MMBT3906T(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. |
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2N4403-TA(RANGE:100-300)
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JCET Group
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PNP transistor in TO-92 package with -40V collector-base and collector-emitter voltage, -600mA continuous collector current, 0.625W power dissipation, and DC current gain (hFE) up to 300. |
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MMBT4401(RANGE:100-300)
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JCET Group
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MMBT4401 NPN transistor in SOT-23 package, with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, 300mW power dissipation, and transition frequency of 250MHz. |
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MMBT3904(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3904T(RANGE:100-300)
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JCET Group
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MMBT3904T is an NPN transistor in a SOT-523 plastic package, with a collector current of 200 mA, collector-emitter voltage of 40 V, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMDT5451(10K)(RANGE:100-300)
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JCET Group
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Dual transistor (NPN+PNP) in SOT-363 package featuring 5551 NPN and 5401 PNP types, with 160 V collector-emitter breakdown voltage, 0.2 A continuous collector current, 0.2 W power dissipation, and hFE up to 300. |
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MMDT4401(RANGE:100-300)
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JCET Group
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Dual NPN transistor in SOT-363 package with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current, and 250 MHz transition frequency for low power amplification and switching applications. |
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MMDT5401(RANGE:100-300)
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JCET Group
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Dual PNP transistor in SOT-363 package with 150 V collector-emitter voltage, 200 mA continuous collector current, 100 MHz transition frequency, and DC current gain up to 300. |
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MMST5551(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-323 package, rated for 160V VCEO, 600mA collector current, 200mW power dissipation, with transition frequency up to 300MHz, suitable for medium power amplification and switching applications. |
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FMMT449(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-23 package with 50 V collector-base voltage, 30 V collector-emitter voltage, 1 A collector current, 200 mW power dissipation, and 150 MHz transition frequency. |
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A42(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-89-3L package with 305 V collector-emitter breakdown voltage, 200 mA continuous collector current, 500 mW power dissipation, and low collector-emitter saturation voltage. |
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MMDT5551(RANGE:100-300)
