NCE0115AK
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NCEPOWER
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NCE0115AK N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 15A continuous drain current, RDS(ON) less than 90mΩ at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. |
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NCE0117I
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NCEPOWER
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NCE0117I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 56mΩ typical at 10V gate-source voltage, designed for high-frequency switching applications. |
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NCE0110AK
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NCEPOWER
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NCE0110AK is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 10A continuous drain current, RDS(ON) less than 110mΩ at VGS=10V, and low gate charge, suitable for power switching and high frequency applications. |
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NCE0115K
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NCEPOWER
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NCE0115K N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 15A continuous drain current, 80mΩ typical RDS(ON) at VGS=10V, and 22.3nC total gate charge, suitable for power switching and high-frequency applications. |
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NCE0117
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NCEPOWER
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NCE0117 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 17A continuous drain current, RDS(ON) less than 70mΩ at VGS=10V, and low gate charge for high-efficiency switching applications. |
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NCE0117AK
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NCEPOWER
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NCE0117AK is a channel enhancement mode power MOSFET with 100V drain-source voltage, 17A continuous drain current, and low on-resistance of 42mΩ typical at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. |
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NCE0110K
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NCEPOWER
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N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 9.6A continuous drain current, and 140mΩ typical RDS(ON) at 10V gate-source voltage, designed for power switching and high-frequency applications. |
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NCE0110AS
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NCEPOWER
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NCE0110AS N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 10A continuous drain current, and low on-resistance of 14mΩ typical at VGS=10V, utilizing trench technology for high efficiency in DC/DC and telecom applications. |
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NCE0117K
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NCEPOWER
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NCE0117K N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 17A continuous drain current, 56mΩ typical RDS(ON) at 10V VGS, and 30nC total gate charge, suitable for power switching and high frequency applications. |
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NCE011N30GU
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NCEPOWER
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NCE011N30GU is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 325A continuous drain current, and low on-resistance of 0.75mΩ at VGS=10V, housed in a DFN5x6-8L package. |
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NCE0115AK
