E--02 Search Results
E--02 Datasheets (34)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| E02 | EMCO High Voltage | Proportional DC to HV DC Converter | Original | 265.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| E02425-000 |
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Wire & Harness ID Products; HLX203RD1TS033B-PREV ( Tyco Electronics ) | Original | 5.56MB | 85 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| E02-5 | EMCO High Voltage | Proportional DC to HV DC Converter | Original | 265.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| E02CT | EMCO High Voltage | DUAL POLARITY HIGH VOLTAGE MODULE | Original | 505.03KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE0260P
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NCEPOWER | NCE0260P N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0224AF
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NCEPOWER | NCE0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 62mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0208IA
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NCEPOWER | NCE0208IA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 8A continuous drain current, 260mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0224AK
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NCEPOWER | NCE0224AK N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, using trench technology for low gate charge and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FM33LE023
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Shanghai Fudan Microelectronics Group Co Limited | 32-bit ARM Cortex-M0+ MCU with 128/64KB Flash, 16KB RAM, 64MHz max frequency, and multiple low-power modes including Sleep and DeepSleep. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE025N30G
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NCEPOWER | NCE025N30G is a 30V, 115A DFN5x6-8L MOSFET with 2.2mΩ RDS(ON) at VGS=10V, advanced trench technology, low gate charge, suitable for high-frequency switching and DC/DC conversion applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0275
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NCEPOWER | NCE0275 is a Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 75A continuous drain current, and low on-resistance of 19mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0224D
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NCEPOWER | NCE0224D N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0224F
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NCEPOWER | NCE0224F N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 64mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low on-resistance and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0240
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NCEPOWER | NCE0240 is an N-channel enhancement mode power MOSFET with 200V drain-source voltage, 40A continuous drain current, and low on-resistance of 36.4mΩ at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0240F
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NCEPOWER | NCE0240F N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 40A continuous drain current, and 36.4mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0260T
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NCEPOWER | NCE0260T N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0275D
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NCEPOWER | 200V, 75A NCE0275D power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, low gate charge, high EAS capability, and designed for automotive, hard-switched, and high-frequency applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0275T
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NCEPOWER | 200V, 75A NCE0275T power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, high current capability, and optimized performance for automotive and high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTE025N04D
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 190A, 1.5mΩ N-channel Power Trench MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NCE0224A
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NCEPOWER | NCE0224A N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 80mΩ maximum RDS(ON) at 10V gate-source voltage, utilizing trench technology for low on-resistance and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
E--02 Price and Stock
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Nextgen Components E0201X7R152K250NTAAuto. MLCC X7R 1.5nF 10% 25V 020 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E0201X7R152K250NTA | Tape & Reel | 9,000,000 | 90,000 |
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Buy Now | |||||
Nextgen Components E0201C0G330J500NTAAuto. MLCC C0G 33pF 5% 50V 0201 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E0201C0G330J500NTA | Tape & Reel | 9,000,000 | 90,000 |
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Buy Now | |||||
TDK Corporation B72580E0200K062VARISTOR 33V 800A 1812 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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B72580E0200K062 | Digi-Reel | 13,890 | 1 |
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| B72580E0200K062 | Tape & Reel | 13,890 | 1,500 |
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Buy Now | ||||||
TDK Corporation C0603C0G1E020C030BFCAP CER 2PF 25V C0G 0201 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C0603C0G1E020C030BF | Tape & Reel | 7,734 |
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Buy Now | ||||||
| C0603C0G1E020C030BF | Cut Tape | 7,734 | 1 |
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KEMET Corporation T510X687K006ATE023CAP TANT 680UF 10% 6.3V 2917 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T510X687K006ATE023 | Cut Tape | 1,890 | 1 |
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Buy Now | |||||
| T510X687K006ATE023 | Digi-Reel | 1,890 | 1 |
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Buy Now | ||||||