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E02
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EMCO High Voltage
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Proportional DC to HV DC Converter |
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265.63KB |
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E02425-000
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Tyco Electronics
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Wire & Harness ID Products; HLX203RD1TS033B-PREV ( Tyco Electronics ) |
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5.56MB |
85 |
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E02-5
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EMCO High Voltage
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Proportional DC to HV DC Converter |
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265.63KB |
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E02CT
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EMCO High Voltage
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DUAL POLARITY HIGH VOLTAGE MODULE |
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505.03KB |
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NCE0260P
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NCEPOWER
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NCE0260P N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE0208IA
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NCEPOWER
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NCE0208IA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 8A continuous drain current, 260mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. |
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NCE0224AF
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NCEPOWER
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NCE0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 62mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. |
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NCE0224AK
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NCEPOWER
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NCE0224AK N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, using trench technology for low gate charge and high efficiency in power switching applications. |
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NCE025N30G
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NCEPOWER
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NCE025N30G is a 30V, 115A DFN5x6-8L MOSFET with 2.2mΩ RDS(ON) at VGS=10V, advanced trench technology, low gate charge, suitable for high-frequency switching and DC/DC conversion applications. |
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NCE0275
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NCEPOWER
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NCE0275 is a Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 75A continuous drain current, and low on-resistance of 19mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance. |
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FM33LE023
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Shanghai Fudan Microelectronics Group Co Limited
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32-bit ARM Cortex-M0+ MCU with 128/64KB Flash, 16KB RAM, 64MHz max frequency, and multiple low-power modes including Sleep and DeepSleep. |
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NCE0260T
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NCEPOWER
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NCE0260T N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency switching applications. |
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NCE0275D
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NCEPOWER
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200V, 75A NCE0275D power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, low gate charge, high EAS capability, and designed for automotive, hard-switched, and high-frequency applications. |
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NCE0224A
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NCEPOWER
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NCE0224A N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 80mΩ maximum RDS(ON) at 10V gate-source voltage, utilizing trench technology for low on-resistance and high efficiency in power switching applications. |
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JMTE025N04D
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 190A, 1.5mΩ N-channel Power Trench MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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NCE0275T
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NCEPOWER
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200V, 75A NCE0275T power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, high current capability, and optimized performance for automotive and high-frequency switching applications. |
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NCE0250D
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NCEPOWER
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NCE0250D is an N-channel enhancement mode power MOSFET with 200V drain-source voltage, 50A continuous drain current, and low on-resistance of 30mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. |
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NCE0270T
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NCEPOWER
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200V, 70A NCE0270T trench power MOSFET with RDS(ON) less than 19mOhm at VGS=10V, designed for high-frequency switching applications, featuring low gate charge, high avalanche ruggedness, and optimized thermal performance in TO-247-3L package. |
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NCE0260
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NCEPOWER
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200V, 60A NCE0260 trench MOSFET with RDS(ON) less than 28mΩ at VGS=10V, designed for high-frequency switching applications, featuring low gate charge, high avalanche energy, and excellent thermal performance in TO-220-3L package. |
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NCE02P20K
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NCEPOWER
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NCE02P20K is a -200V, -20A trench technology power MOSFET with RDS(ON) less than 200mΩ at VGS=-10V, designed for high-density applications requiring low on-resistance and low gate charge. |
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NCE0260P
