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    E--02 Search Results

    E--02 Datasheets (34)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    E02
    EMCO High Voltage Proportional DC to HV DC Converter Original PDF 265.63KB 1
    E02425-000
    Tyco Electronics Wire & Harness ID Products; HLX203RD1TS033B-PREV ( Tyco Electronics ) Original PDF 5.56MB 85
    E02-5
    EMCO High Voltage Proportional DC to HV DC Converter Original PDF 265.63KB 1
    E02CT
    EMCO High Voltage DUAL POLARITY HIGH VOLTAGE MODULE Original PDF 505.03KB 2
    badge NCE0224AK
    NCEPOWER NCE0224AK N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, using trench technology for low gate charge and high efficiency in power switching applications. Original PDF
    badge NCE0208IA
    NCEPOWER NCE0208IA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 8A continuous drain current, 260mΩ typical RDS(ON) at VGS=10V, and low gate charge, suitable for power switching and high-frequency applications. Original PDF
    badge NCE0224AF
    NCEPOWER NCE0224AF N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 24A continuous drain current, 62mΩ typical RDS(ON) at 10V VGS, and low gate charge, suitable for high-frequency switching applications. Original PDF
    badge NCE0260P
    NCEPOWER NCE0260P N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge FM33LE023
    Shanghai Fudan Microelectronics Group Co Limited 32-bit ARM Cortex-M0+ MCU with 128/64KB Flash, 16KB RAM, 64MHz max frequency, and multiple low-power modes including Sleep and DeepSleep. Original PDF
    badge NCE0275
    NCEPOWER NCE0275 is a Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 75A continuous drain current, and low on-resistance of 19mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance. Original PDF
    badge NCE025N30G
    NCEPOWER NCE025N30G is a 30V, 115A DFN5x6-8L MOSFET with 2.2mΩ RDS(ON) at VGS=10V, advanced trench technology, low gate charge, suitable for high-frequency switching and DC/DC conversion applications. Original PDF
    badge NCE0260T
    NCEPOWER NCE0260T N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 60A continuous drain current, and 32mΩ typical RDS(ON) at 10V gate-source voltage, designed for high-frequency switching applications. Original PDF
    badge NCE0275D
    NCEPOWER 200V, 75A NCE0275D power MOSFET with advanced trench technology, offering low RDS(ON) of 19mΩ at VGS=10V, low gate charge, high EAS capability, and designed for automotive, hard-switched, and high-frequency applications. Original PDF
    badge NCE0270T
    NCEPOWER 200V, 70A NCE0270T trench power MOSFET with RDS(ON) less than 19mOhm at VGS=10V, designed for high-frequency switching applications, featuring low gate charge, high avalanche ruggedness, and optimized thermal performance in TO-247-3L package. Original PDF
    badge NCE02P20K
    NCEPOWER NCE02P20K is a -200V, -20A trench technology power MOSFET with RDS(ON) less than 200mΩ at VGS=-10V, designed for high-density applications requiring low on-resistance and low gate charge. Original PDF
    badge NCE0260
    NCEPOWER 200V, 60A NCE0260 trench MOSFET with RDS(ON) less than 28mΩ at VGS=10V, designed for high-frequency switching applications, featuring low gate charge, high avalanche energy, and excellent thermal performance in TO-220-3L package. Original PDF
    badge NCE0224DA
    NCEPOWER NCE0224DA N-channel enhancement mode power MOSFET with 200V drain-source voltage, 24A continuous drain current, and 62mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low on-resistance and high efficiency in power switching applications. Original PDF
    badge NCE0250D
    NCEPOWER NCE0250D is an N-channel enhancement mode power MOSFET with 200V drain-source voltage, 50A continuous drain current, and low on-resistance of 30mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. Original PDF
    badge NCE0208KA
    NCEPOWER NCE0208KA N-Channel Enhancement Mode Power MOSFET with 200V drain-source voltage, 8A continuous drain current, and 260mΩ typical RDS(ON) at 10V VGS, suitable for power switching and high-frequency applications. Original PDF
    badge JMTE025N04D
    Jiangsu JieJie Microelectronics Co Ltd 40V, 190A, 1.5mΩ N-channel Power Trench MOSFET in TO-263-3L package with low gate charge, 100% UIS tested, suitable for load switch, PWM, and power management applications. Original PDF
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    E--02 Price and Stock

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    Murata Manufacturing Co Ltd GCM1885C2A182GE02W

    CAP CER 1800PF 100V C0G 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () GCM1885C2A182GE02W Cut Tape 8,000 1
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    GCM1885C2A182GE02W Reel 8,000 8,000
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    TDK Corporation CGA1A2C0G1E020C030BA

    CAP CER 2PF 25V C0G 0201
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    DigiKey () CGA1A2C0G1E020C030BA Cut Tape 5,800 1
    • 1 $0.10
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    CGA1A2C0G1E020C030BA Digi-Reel 5,800 1
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    Renesas Electronics Corporation AT25XE021A-XMHN-T

    IC FLASH 2MBIT SPI 70MHZ 8TSSOP
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    DigiKey () AT25XE021A-XMHN-T Digi-Reel 3,686 1
    • 1 $1.36
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    AT25XE021A-XMHN-T Cut Tape 3,686 1
    • 1 $1.36
    • 10 $1.28
    • 100 $1.19
    • 1000 $1.09
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    KEMET Corporation T520B336M006ATE025

    CAP TANT POLY 33UF 6.3V 1411
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    DigiKey () T520B336M006ATE025 Cut Tape 2,574 1
    • 1 $1.41
    • 10 $0.93
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    T520B336M006ATE025 Digi-Reel 2,574 1
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    T520B336M006ATE025 Reel 2,000 2,000
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    Vishay Dale TMC050R5000FE02

    RES CHAS MNT 0.5 OHM 1% 50W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMC050R5000FE02 Bulk 96 1
    • 1 $33.26
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    • 1000 $16.01
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