E PLAN Search Results

Contextual Info: Te m ic BA604 TELEFUN KEN Sem iconductors Silicon Planar Diode Applications General purpose .- 4 l - Absolute Maximum Ratings Tj = 25 °C P a r a m e te r T e s t C o n d it io n s Type P e a k r e v e r s e v o lt a g e , n o n r e p e titiv e R e v e r s e v o lta g e

Contextual Info: INTERNATIONAL , 1N4938R SEMICONDUCTOR INC. REVERSE POLARITY SWITCHING DIODE D IFFU S E D S ILIC O N PLANA R 1 ABSOLUTE MAXIMUM RATINGS \ C H A R A C T E R IS T IC SYM BOL VALUE U N IT vR R e v e rs e V o lta g e 175 V VRM P e a k R e v e rs e V o lta g e 200

SA 9151

Contextual Info: VfSMAY _LS4151 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N4151 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s

Contextual Info: Te m ic LS4154 TEL E FU N K E N Sem iconductors Silicon Epitaxial Planar Diode Features • E lectrical data id en tical w ith the d e v ic e IN 4 I5 4 • Q uadro M e lf pack age Applications E xtrem e fast sw itc h e s Absolute M axim um Ratings T; = 25 °C

transistor marking code 7E SOT-23

Abstract: transistor with marking BH BCV72 BFQ31 BFQ31A FMMT5087 FMMT5087R NPN transistors sot-23 26 ferranti CB SOT-23
Contextual Info: I t FERRANTI IlsemiconductorsL FMMT5087 PNP S ilicon Planar Small Signal T ra n s is to r D ES C R IPTIO N T h is d e v ic e is a p p lic a tio n s . in te n d e d fo r lo w le v e l, g e n e ra l p u rp o s e E n ca p s u la te d in th e p o p u la r SOT-123 p a c k a g e th e d e v ic e is

Contextual Info: LS4148.LS4448 v ìs M a y ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e s 1 N 4 1 48 and 1 N 4 4 4 8 re s p e c tiv e ly • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s

d1839

Abstract: CZMA20
Contextual Info: CDIL CZMA series SILICON PLANAR VOLTAGE DUAL ZENER DIODES L o w p o w e r g e n e ra l p u rp o s e d u a l z e n e r d io d e s , c o m m o n a n o d e Pin configuration P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S I N m m 1 = CATHO DE

Contextual Info: LL4148.LL4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e s 1 N 4 1 48 and 1 N 4 4 4 8 re s p e c tiv e ly Applications 94 9371 E x tre m e fa s t s w itc h e s Absolute Maximum Ratings

Contextual Info: LS4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s Absolute Maximum Ratings

Contextual Info: BAV17.BAV21 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Applications G e n e ra l p u rp o s e s Absolute Maximum Ratings Tj = 25°C P a ra m e te r T e s t C o n d itio n s P e a k re v e rs e v o lta g e T yp e S ym bol V alue U nit B A V 17

Contextual Info: Te m ic TELEFUN KEN Sem iconductors Silicon Epitaxial Planar Diodes Features • E le c tr ic a l d a ta iden tica l w ith th e d e v i c e s I N 4 I 4 8 a n d 1 N 4 4 4 8 r e s p e c t iv e l y • Q uadro M elf package Applications E x tr e m e fast s w it c h e s

2SD1645

Abstract: I32O
Contextual Info: Power Transistors 2SD1Ó45 2SD1645 Silicon NPN Epitaxial Planar Darlington Type P a c k a g e D im e n s io n s A F A m plifier • F e a tu re s • 60V Z e n e r diode b e tw e e n built-in C and B, C and E • V e ry sm all flu ctu atio n s in b re a k d o w n v o ltag e

Contextual Info: I n t e r n a t/ o n a l S e m ic o n d u c t o r , I n c . 1N4148 GENERAL PURPOSE SWITCHING DIODES DIFFUSED SILICON PLANAR 1 ABSOLUTE MAXIMUM RATINGS s SYM BOL C H A R A C T E R IS T IC U N IT VALUE 75 V P e a k R e v e rs e V o lta g e 100 V R e c tifie d C u rre n t A v e ra g e

Contextual Info: Te m ic LL4151 T EL E FU N K E N Sem iconductors Silicon Epitaxial Planar Diodes Features • E lectrical data id en tical w ith the d e v ic e 1N 4151 Applications E xtrem e fast sw itc h e s Absolute M axim um Ratings Param eter Test C onditions Type R epetitive peak reverse voltage

1 watt diode

Abstract: Scans-0017340
Contextual Info: IF6JF7GH TUNG'SOL — IF6 SMALL METAL H O R I Z O N T A L O P E R A T I O N MAT S £ P E R ­ M I T T E D iN THE 1 F 6 T UB E T Y P E I F P I N S 1 A N D 6 A R E ON A V E R T I C A L PLANE. T H E S A M E W I L L BE T R U E F OR T H E 1 F 7 G M T U B E T Y P E I F P I H S

Contextual Info: vüShâÿ ▼ LL4154 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 Applications 94 9371 E x tre m e fa s t s w itc h e s s Absolute Maximum Ratings Tj = 2 5 ° C P a ra m e te r

BF222

Abstract: transistor bf 222
Contextual Info: BF 222 SILICON PLANAR NPN AMPLIFIER AND CO NVERTER FOR FM TUNERS T h e B F 222 is a s ilic o n p la n a r N P N tra n s is to r in a T O - 7 2 imetal c a s e . T h is d e v ic e is d e s ig n e d fo r tu n e rs of F M re c e iv e rs , a n d fe a tu re s lo w n o is e , h ig h g a in a n d e x c e lle n t

2sa1270

Abstract: 2SC3202 Low Power Amplifiers 500mW 5v transistor
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC 3202 ( APPLICATIONS *) • Low F r e q u e n c y , L ow P o w e r Amplifiers ■ G e n e ra l- d riv e r S t a g e Amplifiers ■ General p u r p o s e S w itching A pplications • Excellent hFE v s .

500mW 5v transistor

Abstract: 2SC3202 Low Power Amplifiers
Contextual Info: SILICON PHP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SM27Q APPLICATIONS • Low F re q u e n c y , L o w P o w e r A m p l if i e r s ■ G e n e r a l - d r i v e r S t a g e A m p l if i e r s • G e r\e ra \ P u r p o s e S w i t c h i n g A p p U c a tio n s

BCR5AM

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING D im e n s io n s in m m 10.5 MAX 4.5 LU U LU * M e a s u r e m e n t p o in t o f c a s e t e m p e r a tu r e • IT (RMS) . 5A

2SD1322

Contextual Info: P o w e r T ra n s is to rs b T B2 f l 5 2 2SD1322 Q01b700 2SD1322 fc>44 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching • Features • 3 0V Z e n e r d io d e built-in b e tw e e n C and B • V e r y sm a ll flu c tu a tio n in b r e a k d o w n v o lt a g e s

2SC3979

Abstract: npn 1000V 15A 2SC3979A 4l20
Contextual Info: Power Transistors 2SC3979, 2SC3979A 2 S C 3 9 7 9 , 2S C 3979A Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s High B re a k d o w n V o lta g e , High S p e e d S witching • F e a tu re s • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e

KTC1959

Abstract: Low Power Amplifiers A562TM KTA562TM
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS c KTC1959 APPLICATIONS • Low F r e q u e n c y , L o w P o w e r A mplifiers ■ G e n e r a l- d r iv e r S t a g e A mplifiers ■ G eneral p u r p o s e S w itching Applications • Excellent hFE v s .

rca 40290

Abstract: 40290 rca 40291 40290 rca RCA TO60 TRANSISTORS 40292 40291 300 watts amplifier circuit diagram C1u TRANSISTOR 002MF
Contextual Info: File No. 70 R F P ow e r T r a n s is to r s 40290 40291 40292 Solid State Division R CA - 4 0 2 9 0 , 4 0 2 9 1, a n d 40 29 2 a r e e p ita x ia l planar tr a n s is t o r s of the s ilic o n n-p-n type. T h e y e m p l o y an " o v e r l a y " e m i t t e r e l e c t r o d e d e s i g n and