E PLAN Search Results

Contextual Info: Te m ic BA604 TELEFUN KEN Sem iconductors Silicon Planar Diode Applications General purpose .- 4 l - Absolute Maximum Ratings Tj = 25 °C P a r a m e te r T e s t C o n d it io n s Type P e a k r e v e r s e v o lt a g e , n o n r e p e titiv e R e v e r s e v o lta g e

Contextual Info: INTERNATIONAL , 1N4938R SEMICONDUCTOR INC. REVERSE POLARITY SWITCHING DIODE D IFFU S E D S ILIC O N PLANA R 1 ABSOLUTE MAXIMUM RATINGS \ C H A R A C T E R IS T IC SYM BOL VALUE U N IT vR R e v e rs e V o lta g e 175 V VRM P e a k R e v e rs e V o lta g e 200

SA 9151

Contextual Info: VfSMAY _LS4151 ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N4151 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s

components smd military

Abstract: national semiconductor integrated circuit logic chip
Contextual Info: October 1995 GTL Logic KEY T e available in JEDEC e e available in EIAJ Te e available in JEDEC and EIAJ w e available in wide format Tw e available in standard and Pw e planned in standard wide format available in wide format e military temperature range

1570H

Abstract: SD-47322-001
Contextual Info: | 3 10 2 | 1 NOTES: 1. CONNECTOR DESIGN BASED ON E X PR E S S C A R D STAN D AR D , 2. COMPONENTS: HEADER: S H E E T 2 EJECTOR: S H E E T 3 " P S S 3. PCB LA Y O U T P L E A S E R E F E R TO S H E E T 4, “M j- i j 4. T A IL COM PLANARITY OF HEADER TO BE

k 2541

Abstract: 4Q-95 TT2240 MILITARY QUALIFIED DIP SWITCHES 652 smd
Contextual Info: October 1995 BiCMOS Logic KEY ABT T e available in JEDEC e e available in EIAJ Te e available in JEDEC and EIAJ w e available in wide format Tw e available in standard and Pw e planned in standard wide format available in wide format e military temperature range

Contextual Info: Te m ic LS4154 TEL E FU N K E N Sem iconductors Silicon Epitaxial Planar Diode Features • E lectrical data id en tical w ith the d e v ic e IN 4 I5 4 • Q uadro M e lf pack age Applications E xtrem e fast sw itc h e s Absolute M axim um Ratings T; = 25 °C

transistor marking code 7E SOT-23

Abstract: transistor with marking BH BCV72 BFQ31 BFQ31A FMMT5087 FMMT5087R NPN transistors sot-23 26 ferranti CB SOT-23
Contextual Info: I t FERRANTI IlsemiconductorsL FMMT5087 PNP S ilicon Planar Small Signal T ra n s is to r D ES C R IPTIO N T h is d e v ic e is a p p lic a tio n s . in te n d e d fo r lo w le v e l, g e n e ra l p u rp o s e E n ca p s u la te d in th e p o p u la r SOT-123 p a c k a g e th e d e v ic e is

ieee 1149

Abstract: MQUAD SCAN18245T SCAN18373T SCAN18374T SCAN18540T SCAN18541T SCANPSC100F SCANPSC110 SCANPSC110F
Contextual Info: December 1995 SCAN IEEE 1149 1 JTAG COMPLIANT KEY T e available in JEDEC e e available in EIAJ Te e available in JEDEC and EIAJ w e available in wide format Tw e available in standard and Pw e planned in standard wide format available in wide format e military temperature range

Contextual Info: LS4148.LS4448 v ìs M a y ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e s 1 N 4 1 48 and 1 N 4 4 4 8 re s p e c tiv e ly • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s

d1839

Abstract: CZMA20
Contextual Info: CDIL CZMA series SILICON PLANAR VOLTAGE DUAL ZENER DIODES L o w p o w e r g e n e ra l p u rp o s e d u a l z e n e r d io d e s , c o m m o n a n o d e Pin configuration P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S I N m m 1 = CATHO DE

Contextual Info: LL4148.LL4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e s 1 N 4 1 48 and 1 N 4 4 4 8 re s p e c tiv e ly Applications 94 9371 E x tre m e fa s t s w itc h e s Absolute Maximum Ratings

Contextual Info: LS4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • E le ctrica l d a ta Id e n tica l w ith th e d e v ic e 1 N 4 1 5 4 • Q u a d ra M e lf p a c k a g e Applications E x tre m e fa s t s w itc h e s Absolute Maximum Ratings

Contextual Info: BAV17.BAV21 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Applications G e n e ra l p u rp o s e s Absolute Maximum Ratings Tj = 25°C P a ra m e te r T e s t C o n d itio n s P e a k re v e rs e v o lta g e T yp e S ym bol V alue U nit B A V 17

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -JU N E 1996_O C O M P L E M E N T A R Y TYPE - B SR4Q PARTMARKING DETAIL - BRI ABSOLUTE MAXIMUM RATINGS. PARAM ETER C o llec to r-B as e V o lta g e C o ile c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e

2SD1645

Abstract: I32O
Contextual Info: Power Transistors 2SD1Ó45 2SD1645 Silicon NPN Epitaxial Planar Darlington Type P a c k a g e D im e n s io n s A F A m plifier • F e a tu re s • 60V Z e n e r diode b e tw e e n built-in C and B, C and E • V e ry sm all flu ctu atio n s in b re a k d o w n v o ltag e

Contextual Info: INTERBOARD S E P A R A T IO N PLAN E 3AD — I R ECEPTAELE HOUSING INTERBOARD. S E P A R A T IO N PLAN E m l I?USD M E A S U R E M E N T NO. OPEN T O L E R A N C E S < PER ISO 276B Draw n f SCALE D ate Name D 9 A P R D1 ECS T ITLE E R M E T B HOUSING J. ROE

4-bit bidirectional shift register 74 194

Abstract: 74Fxxx e smd diode TBA 828 1240a smd 64 CERAMIC LEADLESS CHIP CARRIER LCC t 04 27 smd TBA 940 4 nand dip 16 ECL binary Counter
Contextual Info: September 1995 Advanced TTL Logic KEY ALS AS FAST FASTr TM T e available in JEDEC e e available in EIAJ Te e available in JEDEC and EIAJ w e available in wide format Tw e available in standard and Pw e planned in standard wide format available in wide format

PU4320

Contextual Info: Power Transistor Arrays PU4320 PU4320 P a c k a g e D im e n s io n s Silicon NPN/PNP Planar Darlington Type P o w e r A m p lifie r, S w itc h in g • F e a tu re s • H igh D C c u r re n t gain hFg • H igh sp e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e l e m e n t

Contextual Info: I n t e r n a t/ o n a l S e m ic o n d u c t o r , I n c . 1N4148 GENERAL PURPOSE SWITCHING DIODES DIFFUSED SILICON PLANAR 1 ABSOLUTE MAXIMUM RATINGS s SYM BOL C H A R A C T E R IS T IC U N IT VALUE 75 V P e a k R e v e rs e V o lta g e 100 V R e c tifie d C u rre n t A v e ra g e

ZENER DIODES BZV 85 8V2

Abstract: UUA 180 85c91
Contextual Info: BZV85c2v4-c200 SILICON PLANAR POWER ZENER DIODES Z e n e r vo lta ge ra n ge ’ ’ Type v „ m D y n a m ic re s is ta n c e R e v e rs e lea ka ge c u rre n t T e m p , c o e ffic ie n t o f Z e n e r v o lta g e lIT o r V JT 2 f and r Ü mA uA V k at I

Contextual Info: Te m ic LL4151 T EL E FU N K E N Sem iconductors Silicon Epitaxial Planar Diodes Features • E lectrical data id en tical w ith the d e v ic e 1N 4151 Applications E xtrem e fast sw itc h e s Absolute M axim um Ratings Param eter Test C onditions Type R epetitive peak reverse voltage

1R5 silicon diode

Abstract: cd4001
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ISSUE 2 -S E P T E M B E R 1995 FLLD258 O PART M AR KIN G DETAIL - D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO l. R e p e titiv e Peak Reverse V o lta g e V rrm 100 V A ve ra g e R e c tifie d F o rw a rd C u rre n t

Contextual Info: SILONEX; SLR-5OL SERIES NPN SILICON PLANAR EPITAXIAL PHOTODARLINGTON I G e n e r a l D e s c r i p t io n The S i l o n e x SL R -50L NPN s i l i c o n p la n a r p h o t o d a r l in g t o n s e r i e s i s m ou n ted in a T O -18 h ig h p r o f i l e l e n s e d h e r m e t i c a l ly s e a l e d p a c k a g e .