E F8P Search Results

Contextual Info: R E V ISID N c M 0D S -F-8P 8C -X -S-X -X-TH T A B LE Code F o rw a rd -G G re e n -Y Y e llo w 1 R e ve rse — LED USED L E D — G1 - X X — L E D — Y1 - X X -1 G ree n O ra n g e LED — G 2 — XX - 2 Y e llo w O ra n g e LE D — Y 2 — XX — 3

Contextual Info: Solid State Auto Switches/Direct Mount Type D-F8N, D-F8P, D-F8B Auto Switch Specifications Grommet D-F8 with indicator light A u t o s w itc h p a r t n o . D-F8N Electrical entry direction P e r p e n d ic u la r D-F8P W ir in g ty p e lo a d PNP — IC c ir c u it, 2 4 V D C re la y , P L C

Contextual Info: PA RT o NUM BER DEFINITIO N ÏÏM 7 7 3 1 3 -Y X X —XX X NB Q F P O S IT IO N S O PTIO N S E E SHEET 3 e — V E R S IO N PLATIN G BASIC PART NUMBER j! - I! ill e 63- 01 MIN o RECOM M ENDED 0.62 H O LE PATTERN SQUARE NOTES: A A 1 - 2 - PIN 3 - M ATERIAL B O D Y : P O LA M ID 3 0 %

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

2SM33

Contextual Info: DATASHEET PM PM C-1990263 ISSUE 4 PMC-Sierra, Inc. PM7381 FREEDM-32A672 32 LINK, 672 CHANNEL F R A M E EN G IN E A N D DATA LINK M A NA G ER W ITH ANY-PHY PACKET IN TE R FA C E PM7381 FREEDM -32A672 32 LINK, 672 CHANNEL FRAME ENGINE AND DATALINK MANAGER WITH

la 8040

Abstract: ic 8040
Contextual Info: HOLE HI-8040 INTEGRATED CIRCUITS S e p te m b e r 1999 CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION APPLICATIONS The HI-8040 is a CM OS integrated circuit designed for high voltage LCD display drive applications. It can drive 85 segm ents at voltages between +5 and -30 volts. An optional

Contextual Info: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

RFD8P06LE

Abstract: RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2
Contextual Info: S E M I C O N D U C T O R RFD8P06LE, RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET July 1997 Features Description • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

Contextual Info: 3 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS D LOC DIST REVISIONS RESERVED. LTR DESCRIPTION RELEASE -1 REV 0520-0237-05 PER THRU -12 DA T E DWN A PV D 2 1 JAN04 T5 JH 18FEB05 T5

MIL-F-18327

Abstract: 8618S
Contextual Info: FILTERS BANDPASS 24 P in H T hrough H o le M o l/m S u p p r e s s io n ig h Fc MHz NOTE: - 1 dB RIPPLE BW (MHz) LOSS (dB) 20 dB BW (MHz) 40 dB BW (MHz) (50dB on low end) PACKAGE 10.7 21.4 30.0 45.0 3.5 3.5 3.5 3.5 0.5 1.0 1.5 2.2 9.63-11.8 19.26-23.6 27-33

Contextual Info: *¡K A U ~b ~ «e ~ is 2 -R TÍ 33 njp ü ° nl r ^ ® nj < £ ffi m e « M I j? * SS10 S * ÏÏS® Ä * ®i s m ?sj í y. íV-~v M ^ 5 «C Dffl W » 4< oí m ta m -K m isa -k $ su -K $3 ® Ì&3 3 « * . Jr6 ili * -s ’-<- b k it 6 $ * W ^ ~ •€ •

DIODE C8P

Abstract: F8P06Q C8P05Q C8P06Q F8P05Q
Contextual Info: SCHOTTKY BARRIER DIODE C8P05Q C8P06Q F8P05Q F8P06Q 8.9A /50— 60V FEATURES o Similar to T0-220AB Case • Fully Molded Isolation F - Type • Dual Diodes - Cathode Common • Low Forward Voltage Drop o Low Power L o s s , High Efficiency • High Surge Capability

psion

Abstract: F8P04Q C8P04Q C8P04 C8P03Q
Contextual Info: SCHOTTKY BARRIER DIODE C8P03Q C8P04Q F8P03Q F8P04Q 8.9A/30— 40V FEATU R ES 0 Similar to T0-220AB Case 0 Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common o Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability

C8P04Q

Contextual Info: SCHOTTKY BARRIER DIODE C8P03Q C8P04Q F8P03Q F8P04Q 8.9A/30~40V 1.41055 1.21047) FEATURES 10.40409) tiiS o iA • - M A X - • / J j3.5U3S) • Similar to T0-220AB Case *• 15.5 .610) 15.11 2.55U «) _4.8 .19) MAX » Dual Diodes - Cathode Common 10.3(.405)

Contextual Info: SCHOTTKY BARRIER DIODE C8P05Q C8P06Q F8P05Q F8P06Q 8.9A/50— 60V FEATURES o similar to T0-220AB Case • Fully Molded Isolation F-Type ° Dual Diodes - Cathode Common • Low Forward Voltage Drop • Low Power Loss, High Efficiency High Surge Capability

Contextual Info: f8p1K m 8 DRAM MT4LC8M8E1, MT4LC8M8B6 For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

TA8810AN

Contextual Info: TOSHIBA TA8814N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8814N COLOR TRANSIENT IMPROVOR IC FOR TV The TA8814N is an integrated circuit having the following two functions in the shrink DIP 20 pin package the CTI Color Transient Improvor function to improve

Contextual Info: REVISION M0DS-F-8P8C-X-S-N-N-SM-XX 1-PACKAGING DPTIDN -TR: TAPE AND REEL SEE SHEET 2 - SUREACE MOUNT LED 2 -N: No LED LED 1 -N: No LED -SHEILDED BOM NUMBER 0.90 COMPONENT S U B -M 0D S -F-8P 8C -U -S M 1 M O D SH -F-02-SM 1 NOTES: 1. £ / REPRESENTS CRITICAL DIMENSION.

TA845

Abstract: TA84-5
Contextual Info: PRODUCT NUM BERS AVAILABLE PRODUCT NUMBER IN TAPE Ac REEL PACKAGING SHEET 7 3 3 4 7 - 104TR SHEET PRODUCT NUMBER 5 9 5 0 0 0 -Y 0 3 T R 2 7 3 3 5 4 -0 0 1 T R 5 9 5 0 0 0 -Y 0 8 T R 4 7 3 3 9 9 -Y 0 1 T R 10 9 5 6 1 5 -Y 0 4 T R 5 8 9 1 0 0 -Y 3 2 T R 3 9 5 6 1 5 -Y 0 6 T R

RP1E

Contextual Info: DATASHEET PM PMC-1990262 ISSUE 4 PMC-Sierra, Inc. PM7380 FRt£tOM-j?P672 FRAME ENGINE AND DA TA U N K MANAGER 32P672 PM7380 FREEDM -32P672 FRAME ENGINE AND DATALINK MANAGER 32P672 DATASHEET PROPRIETARY AND CONFIDENTIAL ISSUE 4: JULY 2000 PMC-Sierra, Inc.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors