E 72873 Search Results

IXYS DS 145

Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s

Contextual Info: [Ei IXYS Mw. 75-12 A{ IGBT Modules U = 90 A Sixpack v = 1200 V c e s V c e , » „ w . = 2 -2 V S h o rt C irc u it S O A C a p a b ility S q u a re R B S O A E 72873 Preliminary data Symbol Conditions Maximum Ratings V CES V CQR Tj = 25°C to 150°C 1200

TS 100-12

Contextual Info: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s

Contextual Info: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions

Contextual Info: □IXYS VUO 36 Three Phase Rectifier Bridges v RSM vRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 ^dAVM 35A = VRRM = 1200-1800 V + Type 1• I Î1 til VUO 36-12N07 VUO 36-14N07 VUO 36-16N07 VUO 36-18N07* i. . J * d e liv e ry tim e o n re q u e s t Sym bol

TUNER UV915E

Abstract: UV916E U943C UV816 UV915E UV617 UV618 54175 OFWG3254 BF970
Contextual Info: TELEVISION TUNERS C O A X IA L A E R IA L INPUT ASSEMBLIES page Selection guides V H F /U H F television tu n e rs . V H F /U H F television fro n t e n d s .

mcc 90-12

Abstract: MCC 90-16 abb mcc 90-12 ASEA thyristor ABB thyristor modules mcc 250 thyristor MCC 90-15 ABB thyristor modules MCC 65 MCC 90-14 MCC 90
Contextual Info: A S E A BROüJN/ABB "T -2 L 5 -2 3 SEMICON ES! Phase control Thyristor-Modules Netz-Thyristor-Module D aten p ro D iode o d e r T h y ris to r/d a ta p e r d io d e o r th y r is to r /les ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

Contextual Info: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il

W3100

Abstract: DIODE REDRESSEMENT T-25-23 ABB thyristor modules k4101 K21-0120A Diodes de redressement
Contextual Info: A S E A BROUN/ABB “ñ3 SEMICON Netz-Thyristor-Diode-Module iT | □□4ñ30ñ □□□Dns 2 1 ~ -^ -_ 2 5 -2 3 Phase control Thyristor-Diode-Modules D aten pro D iode Oder T h y ris to r/d a ta p e r d io d e o r th y r is to r /ie s ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

DIODE DATABOOK

Contextual Info: DIXYS DSEP 2x 35-06C Advanced Technical Information HiPerFRED Epitaxial Diode •FAV with soft recovery V rrm l rr V V HHM V T yp e V 600 600 S ym bo l I frms D S E P 2x 35 -06 C T e s t C o n d itio n s =8 0 °C ; rectangular, d =0.5 <10 us; rep. rating, pulse w idth lim ited by T VJM

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

D6607

Abstract: MIXA40W1200TMH ic MARKING QG E72873 MIXA40W1200
Contextual Info: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

D6607

Abstract: ic MARKING QG E72873
Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

MIXA10W1200TMH

Abstract: E72873
Contextual Info: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

MIXA30W1200TMH

Abstract: E72873
Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

MIXA40W1200TMH

Abstract: E72873 MiniPack2
Contextual Info: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA40W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

cla30e1200

Abstract: CMA30E CMA30E1600PB CMA30E1600PN CLA30E1200PC cla30e CLA30E1200PB CLA30E1200HB cla30e12 IXYS DS 145
Contextual Info: CMA 30 E 1600 PN advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 CMA 30 E 1600 PN 1 3 Backside: Isolated Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

VBO 13-04

Abstract: VBO 13-14 A02 vgb 0124 VGB 0493 MY7 VGB0124AY7A VGB 0492 my7 VBO 13-08 VGB0492MY7 E 72873 VB020
Contextual Info: A S E A BROWN/ABB "fli SEMICON D ~ | 004ñ30fl □□□□S1D » S T - 2 3 - 0 I Assemblages de semiconducteurs de puissance en construction moulée Gleichrichter-Brücken, ungesteuert Rectifier bridges, non controlled Ponts redresseurs, non commandés A va la n ch e -T yp

Contextual Info: VUM 85-05A VDSS = 500 V ID25 = 130 A RDS on = 36 mW Rectifier Module for Three Phase Power Factor Correction Preliminary data VRRM VRRM, DRM VDSS Type (FAST Diode) (Diode, Thyr.) (MOSFET) V V V 600 500 500 VUM 85-05A E 72873 Symbol Conditions Maximum Ratings

three phase pfc

Abstract: NF945 8505a G0627 85-05A
Contextual Info: VUM 85-05A VDSS = 500 V ID25 = 130 A Ω RDS on = 36 mΩ Rectifier Module for Three Phase Power Factor Correction Preliminary data VRRM VRRM, DRM VDSS Type (FAST Diode) (Diode, Thyr.) (MOSFET) V V V 600 500 500 VUM 85-05A E 72873 Symbol Conditions Maximum Ratings

bt 2025

Contextual Info: IGBT Modules Sixpack ^C25 VCES VCE sat typ. 60 A 1200 V 2.2 V Short Circuit SOA Capability Square RBSOA E 72873 Preliminary data Symbol Conditions Maximum Ratings vCES vCGR VeES v GEM T j = 25°C to 150°C 1200 V 1200 V Continuous ±20 V Transient ±30 V