E 30 Search Results

Contextual Info: 2 A 3 5 4 6 X 7 Kontakt-Typ _ * □ r pin-type A B L Lochbild (board drillings) VZ D E F H K * * A 5< o o < TT C 5 <=a. Qj LO cvj <T3 i *"0 y Kontaktbelegung A contact loading x I E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E E i 32 30 31

Contextual Info: X Kontaktanordnung contact arrangement 32 Tj o, S 28 30 i 24 26 i El El E E El El El E El El El E 20 22 i E E E E E E 16 18 i E E E E E E 12 14 i E E E E E E 48 E i n p r e s s K o n t a k t e 68 press- i n contacts 8 10 i E E E E E E 2 : 1 4 6 i E E E

Contextual Info: X 32 Tj 30 i 28 26 i Kontaktanordnung 32 E i n p r e s s K o n t a k t e c o n t a c t a r ra n g e m e n t 32 p r e s s - i n c o n t a c t s 24 22 i 20 16 18 i 14 i 12 El El E E E E E E E E E El El E E E E E E E E E o, □ □ □ □ □ □ □ □ □ □ □

Contextual Info: I Maximum Ratings $ f Ite m S ym bol U n it PW B60A20 R e p e titiv e P e a k R e v e rs e V o lta g e •’ . V r RmH ; V 200 300 400 N o n -R e p e titiv e P e a k R e v e rs e V oltag e ", V r s u ,;.'. V 240 360 480 V drm ■ - V 200 300 400 R e p e titiv e P e a k O lf-S ta te V oltag e

Contextual Info: i 'A I WHITE /MICROELECTRONICS 128Kx8 SRAM p r e lim in a r y WPS128K8-XEJX * PLASTIC PLUS FEATURES EVOLUTIONARY PINOUT TO P VIEW NC E E 1 ^ A 14E 3 30 □ CS2 E A7E A6 E A5 E A4 E A3 E A2 E A1 E AO E i/oo E 1/01 E I/0 2 E Vss E 4 29 H W E 5 28 H A13 6

E-200

Abstract: E-250 E-300 E-350 E-400 E-450 E-500 E-550 E-600 E-650
Contextual Info: REV. D L ±.062 1.6 PART NO. L 0.310 [7.9mm] 0.078 [2.0mm] D T 0.156 [4.0mm] C A 0.500 [12.7mm] E-200 2.0 (50.8) E-250 E-300 E-350 E-400 E-450 E-500 E-550 E-600 E-650 E-700 E-750 E-800 2.5 (63.5) 3.0 (76.2) 3.5 (88.9) 4.0 (101.6) 4.5 (114.3) 5.0 (127.0)

Contextual Info: B M axim um R a tin g s :i . . It e m S ym bol U n it SG 16AA20 SG 16AA 30 SG 16AA 40 SG 16AA 50 SG 16AA 60 R e p e titiv e P e a k R e v e rs e V o lta g e V rrm V 200 300 400 500 600 N o n -R e p e titiv e P e a k R e v e r s e V o lta g e V rsm V 240 360

Contextual Info: DRW NO. ± 5 5 - 4 6 X X X 2 — B D E F S T A C K I N G H E I GHT 44 4 4 mm B E T W E E N 40 4 0 mm B E T W E E N 30 30 mm B E T W E E N 2 2 mm B E T W E E N 22 1 0 J 1 5 = 15 mm B E T W E E N = 100 = 85 = 10 0 = 85 ohms ohms, ohms ohms. HSD SEE D E T A I L B

25AA20

Contextual Info: • Maximum Ratings S ym bol U n it SG 25AA20 SG 25AA30 SG 25AA40 R e p e titive P e a k R e ve rse V oltag e V rru V 200 300 400 500 N o n -R e p e titiv e P e a k R e ve rse V o lta g e V rsu V 240 360 48 0 600 720 R e p e titiv e P e a k O ff-S ta te V oltag e

Contextual Info: THYRISTOR SC40C •Maximum Ratings SC40C-80 SC40C-100 SC40C-120 U n it 800 1 000 1 200 V 720 960 1 100 1 300 V 600 800 1 000 1 200 V SC40C-40 SC40C-60 V rrm R e p e t it iv e P e a k R e v e r s e V o lt a g e 400 600 V rsm N o n - R e p e titiv e P e a k R e v e rs e V o lta g e

h1g1

Contextual Info: i S T A C K I N G MODULE PAR T NUMBER TREE 9 5 5 4 5 X X X 2 X “V STACKING 44 44 mm B E T W E E N 40 40 mm B E T W E E N 30 30 mm B E T W E E N 22 22 mm B E T W E E N [10] 15 = 15 mm B E T W E E N 100 ohms, 85 ohms, 100 ohms. 85 ohms. P L A T I N G OPTIONS

Contextual Info: Rla!2 5 C !5 0 0 □ HM:I: +/-5/1 P T C : ,7/1/L □ P E F:A T I N G F:A N G E :- 5 5 T E 10 0 C G T E R A G E R A N G E - b 5 TE 150 C ^ T H E R M A L T I M E G E N E T A N T :30 CEE, M A X * DI 5 GI F'A T I □ N C E N G T A N T :E ,5 n W / C M I N F E W E R R A T I N G :,E 5 W E E 5 C , D E R A T E T E 100

Contextual Info: m LG Semicon Co,Ltd, GM76C8128CL/CLL-W 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration KJ NC E 32] Vcc 3l] A15 A16 E 30] CS2 A14 E 29] AVE A12 E A7 E æ] A13 A6 E 27] A8 A5 E 2ß\ A9 A4 E 25] All 24] /OE A3 E 23] AIO A2 E Al E 22] /CS1

telefunken ra 200 amplifier

Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Contextual Info: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility

5Z27 DIODE

Abstract: zener diode T 5z27
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 5Z27/30 POWER SURGE SUPPRESSOR Unit in m m d e s i g n e d for u s e as a r e v e r s e p o w e r t r a n s i e n t s u p p r e s s o r to p r o t e c t a u t o m o t i v e e l e c t r i c a l e q u i p m e n t s

Contextual Info: a W S1M8-XCX WHITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX 32 DIP TOP VIEW A18C 1 E ^ 31 □ A15 30 □ A17 A7C 5 28 □ A13 E A5 E A4 E A3 E A2 E A1 E AO E i/ooE i/oi E E volutionary, Corner P ow er/G round Pinout

6q7gt

Abstract: 6N7G 6n7gt 6at6 6q7g
Contextual Info: 6KÍ6 6T 6QT6/GT R e p lac e m e n t T y p e s TYPES 6N7G, 6N7GT r-«> <\J 6N7G. 6N7GT. DOU BLE TRIODES RATINGS 6.3 0.8 300 12 5 5.5 H e a te r V o lt a g e H e a te r C u r r e n t A n o d e V o lt a g e P ea k A n o d e C u r r e n t p e r A n o d e

Contextual Info: a WS1M8V-XCX WHITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW A18C 1 E ^ 31 □ A15 30 □ A17 A7C 5 28 □ A13 E A5 E A4 E A3 E A2 E A1 E AO E i/ooE i/oi E E volutionary, Corner P ow er/G round Pinout

6sk7

Contextual Info: V E B W E R K FÜR F E R N M E L D E W E S E N 6 SK 7 — 29 — - HF-, s REGELBARE ZF-, N F - P E N T O D E X92 H K o lb e n a b m e ss u n g e n TECHNISCHE DATEN Heizung: Heizspannung Heizstrom Uj lf 6,3 300 V mA Betriebswerte als HF- und ZF-Verstärker:

Contextual Info: SAfiYO New Product Low On-Resistance Power MOSFETs Low on-resistance Power MOSFETs {J-MOS VDSS:12V/20V/30V Series S a n y o P o w e r MOSFETs TJ-MOS S e r i e s j m e e t t h e m a r k e t n e e d s o f l o w e r v o l t a g e d r i v e a n d m i n i a t u r i z e d s u r f a c e

Contextual Info: Low Profile Modem Transformer S P E C IF I C A T IO N S : 56 Kbps E LE C T R IC A L : IM P ED A N C E : PRI. & S E C . = 6 0 0 OHMS E A C H R E E . D ESIG N ED TO R E E L E C T : 6 0 0 OHMS + 301 D.C. R E S I S T A N C E : 3% ON PRI. WITH OHMS LO A D ON S E C . @ 1 K H z, 1V rm s

17BE3

Abstract: 17be3 tube jedec E12-70 rs tube Scans-0017311
Contextual Info: I7BE3 TUNG -30 1 D IODE COMPACTRON S O C K E T T E R M IN A L S 5,6,8 A N D 9 S H O U L D N O T B E U S E D A S T I E P O IN T S . IT IS F U R T H E R R E C O M M E N D E D T H A T T H E S O C K E T C L IP S FO R T H E S E P IN S B E R E M O V E D . G LA SS BU LB

Contextual Info: 16 14 15 13 12 11 10 8 SYMBOL P R E F E R R E D , 45° M QZJ MUST B E B L E N D E D AT P O I N T OF I N T E R S E C T I O N ZX 0 . 5 ±0.1 C O I N E D G E S TO E L IM IN A T E BURRS 30 f1.75) X (o.0 LETTERS AS NUMBERS DWG STATUS ZONE DATE STG REV N/P CHG

Contextual Info: THYRISTOR SC50C • Maximum Ratings SC50C-100 SC50C-120 SC50C-40 SC50C-60 SC50C-80 V rrm R e p e t it iv e P e a k R e v e r s e V o lt a g e 400 600 800 1 00 0 1200 V V r sm N on-Rep etitive P e a k R e ve rse V o lta g e 480 720 960 1 10 0 1 30 0 V V d rm