E 2056 Search Results

SEM 2006

Abstract: dap 11
Contextual Info: R REV E V I S I O N S D E S C R 1 P T 1 ON RELEASE TO DOCUMENT CONTROL E. C. N. DA T E BY/APP'D 2056 03/28/2006 AS/TL/AS DIMENSIONS ARE IN MILLIMETERS DI M E N S I O N S 8X IN ( FOR REFERENCE ONLY 0.6) ( 0 .1 ) ( 8X 0 . RECOMMENDED LAND PATTERN 3± 0 . 1

TIC 2640

Abstract: S40L15 rectifier d 355 n 2000
Contextual Info: Preliminary Data Sheet PD-20568 rev. B 03/99 4 0 L 15 CT 40L15CTS 40L15CT1 International I R Rectifier SCHOTTKY RECTIFIER 2 x 20 Amps M ajor Ratings and Characteristics Description/Features Characteristics T h is c e n te r ta p S c h o ttk y r e c tifie r h a s b e e n o p tim iz e d fo r U ltra

BU 508 AG

Abstract: 30640
Contextual Info: 4 T H IS D R AW IN G VE R T RA U LIC H E 2 IS U N P U B L I S H E D . U N V E R O E F F E N T L IC H T E Z E ICH N U N G R E L E A S E D FOR P U B LIC A TIO N FREI FUER V E R D E F F E N T L IC H U N G R E V IS IO N S A L L RIG HTS R E S E R V E D . A L L E RECHTE V O R B E H A L T E N

C S 6822

Abstract: S 6822
Contextual Info: DIODES SCREENING PROCEDURES A fte r te m p e ra tu re s ta b iliz a tio n , th e q u a lity le vel of d e liv e re d m o d e ls is p e rio d ic a lly c h e c k e d by s a m p lin g , a c c o rd in g to th e te s ts h e re u n d e r a n d th e te s tin g p ro c e d u re s d e fin e d in th e re le v a n t

Contextual Info: 2SK1925 2056 AP A d va n ce d P e rfo rm a n c e Series V dss = 6 0 0 V IM Channel Power MOSFET 43 U F e a tu r e s • Low ON resistance. • Very high-speed sw itching. •H igh-speed diode (trr= 150ns). b s o lu te M axim u m R a tin g s a tT a = 25°C

9099 dm

Contextual Info: 2SK2058 AP A d v a n c e d P e rfo rm a n c e Series V DSS= 2 5 0 V 2056 N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

RWS 434 RF receiver

Abstract: free SMD Codebook RBS 2109 manual book IOM-2 Interface Reference Guide SMD Codebook 8259A simulator Delta Electronics dps -300HB A RDD 17-33 T1605 sad1 smd
Contextual Info: ICs for Communications DSP Oriented PBX Controller DOC PEB 20560 Version 2.1 Preliminary Data Sheet 11.97 / e .d s n / e m tor e i s duc . w n w o c w i / / : em p t ht S PEB 20560 Revision History: Current Version: Preliminary Data Sheet 11.97 Previous Version:

ic T M 2313

Abstract: 2312t HDSP-2313 HLF6 HDSP2310 HDSP231x HNCP 37 hdsp-231x HDSP2312 MIL-D-87157
Contextual Info: HEWLETT-PACKARD i m E OE CMP NT S D • 4447504 OGÜbhSl T ■ H E R M E T IC , E X T E N D E D T E M P E R A T U R E R A N G E 5 .0 m m .20" 5 X 7 A L P H A N U M E R IC D IS P LA Y S HEWLETT PACKARD S T A N D A R D R ED Y E LLO W H IG H EFFICIENCY R ED

free SMD Codebook

Abstract: SMD Codebook RWS 434 RF receiver TDA 1035 a I80386 RDD 17-33 LINEAR INTEGRATE circuit tda 1025 TDA 555 8259A simulator sad1 smd
Contextual Info: ICs for Communications DSP Oriented PBX Controller DOC PEB 20560 Version 2.1 Preliminary Data Sheet 11.97 / e .d s n / e r m o t e si duc . w n w o c w i / / : em p t ht S PEB 20560 Revision History: Current Version: Preliminary Data Sheet 11.97 Previous Version:

k 2056

Contextual Info: 2056 AP A d va n c e d P e rfo rm a n c e Series V dss = 4 5 0 V N Channel Power M O SFET F e a tu re s • Low O N -state resistance. • Very high-speed sw itching, converters. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage

Contextual Info: 2SK1422 AP A d v a n c e d P e rfo rm a n c e S eries 2056 V dss= 6 0 V N Channel Power M OSFET Features • Low ON-state resistance. • Very high-speed switching. •Converters. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage 60 V

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N1412A

Abstract: 2N1112 2NK12 IC 3Q20 SJ 2036 2N1412 clare mercury relay 3Q20 3Q20 IC Germanium power
Contextual Info: M IL -S - 19500/76C N A V T 20 Septem ber 1967. SU PERSEDING M I L - S - 19500/7 6B(NAVT) 15 J u n e 2965 (See 6. 2) M ILITA RY S P E C IF IC A T IO N TRANSISTOR, P N P , GERM ANIUM , POW ER T Y P E S ZN14IE AND 2N 1412A SCOPE 1. I D e s c rip tio n - T h is s p e c if ic a tio n c o v e rs th e d e ta il r e q u ir e m e n ts

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

infineon starlib

Abstract: STK 4167 GDI EVA BOARD led tv service manual SERVICE MANUAL tv TCL STK 419 140 C166 C16X P-MQFP-128-2 STK CLASS D amplifier
Contextual Info: Users Man u a l , Versi o n 2 .1 , Jun e 2 0 0 0 S DA 6 0 0 0 Tel e t e x t Dec oder w i t h E m b e d d e d 16-bi t C o n t r o lle r M2 IC s fo r Cons um e r s N e v e r s t o p t h i n k i n g . Edition 2000-06-15 Published by Infineon Technologies AG,

Contextual Info: 2SK1423 2056 AP A d va n ce d P e rfo rm a n c e S eries Voss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s a t Ta=25°C Drain to Source Voltage

50-075-6701

Abstract: 51-010-0000
Contextual Info: C R O S S R E F E R E N C E — A M P H E N O L TO A E P AMPH. AEP 901-102. . .9002-1023-001 901-103. .9201-1553-001 901-104. .9202-1553-001 901-105. .9401-1083-109 901-109. .9001-1023-006

X-6827

Contextual Info: 2SK1449 AP A d v a n c e d P e rfo rm a n c e Series 2056 V Dss = 4 5 0 V N Channel Power M OSFET F eatures • Low ON-state resistance. • Very high-speed switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage V dss Gate to Source Voltage

D201O

Contextual Info: I E M E N S C M P N T S n O 4 P T O S IE M E N S 4 E D Ö E 3 b 3 2 L D G Q 4 Ô 0 3 fl S I E X MPD 2545 g r e e n MPD 2547 YELLOW MPD 2548 HIGH EFFICIENCY RED .25" 4-Character, 5x 7 Dot Matrix, X-Y Stackable, HI-REL/Military Alphanumeric Programmable Display"

2sk 2056

Contextual Info: 2SK1448 AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V 2056 N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

3055 rle

Abstract: VEB M ik ro e le k tro n ik U1600 Scans-048 BV EI 3055 M9152 DSAGER00027 0402092 st7255
Contextual Info: pz l f i N e tz tra n sfo rm a to re n N e tz tra n s fo rm a to re n w e rd e n in den ve rsch ie d e n ste n A u s fü h ru n g e n g e fe rtig t, so daß w i r a u f G ru n d des u m fa n g re ic h e n P ro d u k tio n s p ro g ra m m e s in d e r Lage sin d , h oh en

2SK933

Abstract: gat6 2sk 1045 y DS-17 SANYO
Contextual Info: SANYO SEMICONDUCTOR CORP S32SK 923 - 1 E E D | SS2SK932 7 En 7 D 7 b DOOS S Oe T-ll-Ol Silicon N-Channel MOS F E T Silicon N-Channel F E T High Speed Switching Applications High Frequency, Low Noise Amp Applications J E D E C : T 0 2 2 0 package

Contextual Info: 2SK1433 AP A d va n ce d P e rfo rm a n c e Series 2056 V dss= 1 0 0 V N Channel Power M OSFET £3571 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R a tin g s a t Ta = 25°C Drain to Source Voltage

X10391

Contextual Info: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available