E 13009 L Search Results

SR 13009

Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits

E 13009 2

Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use

e 13009 d

Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:

transistor E 13009

Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Rating Unit VcBO

transistor E 13009

Abstract: 13009 H ST13009 e 13009 f ST-13009 13009 l transistor d 13009 13009L E 13009 L p 13009
Contextual Info: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

j 13009

Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Contextual Info: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

P13009

Abstract: PL130-09 QFN16L
Contextual Info: PL130-09 High Speed Translator Buffer to LVDS 2 GND 3 LVDS 4 GND 14 GND 15 OE^ 16 GND 6 LVDS_BAR 5 VDD 12 11 10 9 PL130-09 1 2 3 4 GND 13 7 REF_IN GND VDD GND REF_IN 8 VDD 1 VDD The PL130-09 is a low cost, high performance, high speed, buffer that reproduces any input fr equency from 0 to 1.0GHz. It provides a pair of

SVRME28

Contextual Info: SVRME28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 10 A output Qualified to MIL-PRF-38534 Class H and Class K Design for TOR Compliance SVRME Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRME is specifically designed for use with the SVR series

176380-3

Contextual Info: 4 I •h I *£#£ : o / t\ * : OD n U N ft I ^ i* >■:T ; 7 y ? X A 0 66-^- -f o ^ CUL 9 4 V - 0 J 7. 15 ft, A*. «3 ^ ^ ^ A *an-i±_ti-r : ? v ; A W t . 3>*mJiA_h.0D — v >r 'U -!'' * > v * » C » * * « 0. 3pm3C.ii , 0. 76jjmUjt_h.<75 f t > y , W « 1fJMJ, _fc<r>^ 9 > v *

TM-1010

Abstract: TM-1015 TM2072
Contextual Info: SVRME28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 10 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRME Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRME is specifically designed for use with the SVR series

13005

Abstract: E 13009 L 13001 dip40 package 13001 datasheet 13005 2 SSO24 transistor 13009 D-16 D-20
Contextual Info: IC Packaging Information Package Information Ceramic DIP, 8-16 Leads E 1 E1 2 D S A1 A L L2 b e L1 C b1 Q e1 Dim Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20 0.30

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

MT4C16270DJ-7

Contextual Info: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

bta1b

Abstract: ANI 1015 1N3064 1N916 binary multiplier
Contextual Info: f MI L - M- 3 8 5 1 0 / 3 1 8 A 9 August 1983 SUPERSEDI NG MI L - M- 3 8 5 1 0 / 3 1 8 USAF 20 A p r i l 1979 MI L I T ARY S P E C I F I C A T I O N MI C R OC I R C U I T S , D I G I T A L , LOW POWER SCHOTTKY T T L , BI NARY MU L T I P L I E R , MONOLI THI C S I L I C ON

2yl1

Abstract: GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007
Contextual Info: MIL-M-38510/324C 15 OCTOBER 1987 SUPERSEDING-MIL-M-38510/324B 16 February 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL OCTAL BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification Is approved for use by all Depart­

54HC08

Abstract: SR 13003 E 13007-1 54hc32 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009
Contextual Info: MIL-M-38510/652A 15 Ma* 1987 5 U P L K 3 E Ü I N G -MIL-M-38510/652 31 Ma r c h 1986 M I LI TARY S PECI FI CAT I ON »„ n „ . M I C R O C I R C U I T S , D I G I T A L , HIGH SPEED, CMOS, AND GATES, OR GATES, MONOLITHIC S I L I C O N , P O S I T I V E LOGIC