E 13005 TRANSISTOR Search Results

E 13005 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

E 13005 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EB 13005 Abstract: Transistors 13005 D MJE13004 Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.	OCR Scan	MJE13004/13005 MJE13004 MJE13005 MJE13004-MJE13005 T-33-73 EB 13005 Transistors 13005 D MJE13004	PDF
BR 13005 Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004 Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	Q02e14Sb T-33-U ooaci42b T-33-11 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004	PDF
Transistors 13005 D Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use	OCR Scan	tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K	PDF
CDL13005 Abstract: transistor 13005 13005 13005 TRANSISTOR 13005 2 transistor CDIL 13005 transistor E 13005 13005a 13005 equivalent 13005 A Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CDL13005 O-220 C-120 CDL13005Rev 020304E CDL13005 transistor 13005 13005 13005 TRANSISTOR 13005 2 transistor CDIL 13005 transistor E 13005 13005a 13005 equivalent 13005 A	PDF
E13005 Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR Contextual Info: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications	OCR Scan	TE13004 TE13005 VaE13004 E13005 LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR	PDF
13005 2 transistor Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage	OCR Scan	TD13004 TD13005 TD13ig T02S1 T0252 13005 2 transistor D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT	PDF
13005 2 transistor Abstract: EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005 Contextual Info: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable lor Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage: KSE13004	OCR Scan	KSE13004/13005 KSE13004 KSE13005 13005 2 transistor EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005	PDF
13005 2 transistor Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CDL13005 O-220 C-120 CDL13005Rev 020304E 13005 2 transistor	PDF
transistor 13005 Abstract: 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	CD13005 O-220 C-120 CD13005Rev 300103E transistor 13005 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC	PDF
13005 2 transistor Abstract: transistor sr 13005 transistor d 13005 13005 A transistor Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	CD13005 O-220 C-120 CD13005Rev 300103E 13005 2 transistor transistor sr 13005 transistor d 13005 13005 A transistor	PDF
D13005 Abstract: C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005 Contextual Info: ST13005 High voltage fast-switching NPN power transistor Datasheet − production data Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting	Original	ST13005 O-220 D13005 C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005	PDF
transistor Electronic ballast 13005 Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005 Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times	OCR Scan	TD13004 TD13005 TD13005 TD13004 TD13005Fast transistor Electronic ballast 13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005	PDF
transistor 13005 Abstract: KSE13005HE13005 D260AG-00 KSE13005 10VIC Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D260AG-00 芯片厚度：240±20µm 管芯尺寸：2600x2600µm 2 焊位尺寸：B 极 366×540µm 2，E 极 292×560µm 2	Original	100mm D260AG-00 KSE13005HE13005 O-220 10mAIB 10VIC 125VIC transistor 13005 KSE13005HE13005 D260AG-00 KSE13005	PDF
STD13005 Abstract: transistor E 13005 STD13005I 13005 power transistor pin diagram STD13005IS Contextual Info: STD13005IS NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code STD13005IS	Original	STD13005IS STD13005 STD13005 transistor E 13005 STD13005I 13005 power transistor pin diagram STD13005IS	PDF

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220	OCR Scan	MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005	PDF
in 3003 TRANSISTOR Abstract: acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc Contextual Info: 0182998 A C R I AN INC T? DE \| D l f l E T T f l 0GDm ?S 7 \|~D ^ - ^ - 0 7 W p i ti ü B S G E N ER A L isssbss 3003 D ESC R IPT IO N 3 W ATTS - 28 V O LTS 3000 MHz The 3003 is a common base transistor capable of providing 3 watts of C W R F output power at 3000	OCR Scan	10nfd@ in 3003 TRANSISTOR acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc	PDF
Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED	OCR Scan	O-251) MJD13005 MJD13005 0068771-E	PDF
BUV93 Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003 Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated	OCR Scan	OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003	PDF
IRF 850 Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810 Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400	OCR Scan		PDF
mje13005-1 Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007 Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA	OCR Scan	ST24C02 TS59C11 TS93C46 M9306 M9346 mje13005-1 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR ballast with 13005 MJE-13007	PDF
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data	PDF
diode D45C Abstract: JE 800 transistor L146 IC BD800 Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 fFE M in /M a x @ lc \|XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8 8* 0.5*	OCR Scan	340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800	PDF
Low Capacitance MOS FET 13005 Abstract: BF1205C Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1	Original	BF1205C BF1205C OT363 Low Capacitance MOS FET 13005	PDF
MHT1810 Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534 Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534	PDF

E 13005 TRANSISTOR Search Results

E 13005 TRANSISTOR Result Highlights (5)

E 13005 TRANSISTOR Datasheets Context Search

EB 13005

BR 13005

Transistors 13005 D

CDL13005

E13005

13005 2 transistor

13005 2 transistor

13005 2 transistor

transistor 13005

13005 2 transistor

D13005

transistor Electronic ballast 13005

transistor 13005

STD13005

in 3003 TRANSISTOR

BUV93

IRF 850

mje13005-1

e13009

diode D45C

Low Capacitance MOS FET 13005

MHT1810