E 13005 S Search Results

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

13005 equivalent

Abstract: 13005 mosfet 13005 equivalent internal L5988 74477 L5983 fsw25 C3225 CDRH8D28 L5988D
Contextual Info: L5983 1.5 A step-down switching regulator Features • 1.5 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100 % duty cycle

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

13005 2 transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

transistor 13005

Abstract: 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

13005 2 transistor

Abstract: transistor sr 13005 transistor d 13005 13005 A transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

D13005

Abstract: C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005
Contextual Info: ST13005 High voltage fast-switching NPN power transistor Datasheet − production data Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

mje13005-1

Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

transistor 13005

Abstract: KSE13005 D283AG-00 transistor E 13005
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D283AG-00 芯片厚度：240±20µm 管芯尺寸：2830x2830µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2

in 3003 TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc
Contextual Info: 0182998 A C R I AN INC T? DE | D l f l E T T f l 0GDm ?S 7 |~D ^ - ^ - 0 7 W p i ti ü B S G E N ER A L isssbss 3003 D ESC R IPT IO N 3 W ATTS - 28 V O LTS 3000 MHz The 3003 is a common base transistor capable of providing 3 watts of C W R F output power at 3000

Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

13005 mosfet

Abstract: BL8310
Contextual Info: 上 海 贝 岭 股 份 有 限 公 司 BL8310 电子镇流器专用驱动电路 邮 编 ： 200233 上海市宜山路 810 号 Tel: 86-021-64850700 Fax: 86-021-64854424 BL8310 电子镇流器专用驱动电路 BL8310 是电子镇流器专用控制芯片，作为 BL8305A 的升级产品，

Low Capacitance MOS FET 13005

Abstract: BF1205C
Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

A84 marking code

Abstract: AXH marking AXH 2510
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

MHT1810

Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MC34060AD

Abstract: MPS 0715 A114E A115 JESD22 JESD78 MC33060A MC34060A MR850
Contextual Info: MC34060A, MC33060A Fixed Frequency, PWM, Voltage Mode Single Ended Controllers The MC34060A is a low cost fixed frequency, pulse width modulation control circuit designed primarily for single−ended SWITCHMODEt power supply control. The MC34060A is specified over the commercial operating

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T